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    COMSET SEMICONDUCTORS Search Results

    COMSET SEMICONDUCTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    COMSET SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N1595

    Abstract: 2N1599 2N1596
    Text: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C


    Original     		PDF 2N1595 2N1599 2N1595 2N1596 2N1597 2N1598 2N1599 2N1596

    VOLTAGE-60

    Abstract: No abstract text available
    Text: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)


    Original     		PDF 2N2322 2N2326 2N2322 2N2323 VOLTAGE-60

    2N3055

    Abstract: 2n3055 pin
    Text: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


    Original     		PDF 2N3055 2n3055 pin

    MJ1000

    Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
    Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


    Original     		PDF MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset

    Triac

    Abstract: BTB04-600SL
    Text: SEMICONDUCTORS BTB04-600SL STANDARD TRIACS FEATURE The BTB04-600SL 4Q TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability


    Original     		PDF BTB04-600SL BTB04-600SL Triac

    BDX33C

    Abstract: BDX34C BDX33 bdx33c datasheet BDX34A BDX34 BDX33A BDX33B BDX34B SILICON COMPLEMENTARY transistors darlington
    Text: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.


    Original     		PDF BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33B, BDX33B BDX33C BDX34C BDX33 bdx33c datasheet BDX34A BDX34 BDX33A BDX34B SILICON COMPLEMENTARY transistors darlington

    MJ4035

    Abstract: mj4032 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034
    Text: MJ4030 – MJ4031 – MJ4032 PNP MJ4033 – MJ4034 – MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc


    Original     		PDF MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 MJ4035 MJ4033/34/35 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034

    bd648

    Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649
    Text: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		PDF BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 bd648 bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647

    BDX34 equivalent

    Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
    Text: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.


    Original     		PDF BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33B, BDX33B BDX34 equivalent bdx33c BDX33 BDX34 BDX34B BDX34C BDX33A BDX34A

    BDX62

    Abstract: BDX62B BDX62A BDX62C 62AB
    Text: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V


    Original     		PDF BDX62 BDX62A BDX62B BDX62C BDX62 BDX62B BDX62A BDX62C 62AB

    BDX62A

    Abstract: BDX62B BDX62C BDX62 Fh21e
    Text: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V


    Original     		PDF BDX62 BDX62A BDX62B BDX62C BDX62A BDX62B BDX62C BDX62 Fh21e

    BDX64

    Abstract: BDX64A BDX64B BDX64C DSA0082168
    Text: BDX 64, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V


    Original     		PDF BDX64 BDX64A BDX64B BDX64C BDX64 BDX64A BDX64B BDX64C DSA0082168

    transistor bd650

    Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
    Text: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.


    Original     		PDF BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD644 BD646 BD648 transistor bd650 BD648 BD646 BD652 BD644 IC 651

    BD675-BD677-BD679-BD681

    Abstract: BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681
    Text: NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.


    Original     		PDF BD675-BD677-BD679-BD681 BD676-BD678-BD680-BD682 BD675-BD677-BD679-BD681 O-126 BD675 BD677 BD679 BD681 BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681

    2N3792

    Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790

    2N3716

    Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713

    BDV65

    Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
    Text: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BDV65A, BDV65 BDV64A, BDV65 BDV65A BDV65B BDV65C BDV65B transistors BDV65c BDV64A BDV65A BDV65C

    BU2508AF

    Abstract: bu2508af equivalent TRANSISTOR BU2508AF
    Text: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol


    Original     		PDF BU2508AF BU2508AF O-218) bu2508af equivalent TRANSISTOR BU2508AF

    BDX63

    Abstract: BDX63A BDX63B BDX63C
    Text: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V


    Original     		PDF BDX63 BDX63A BDX63B BDX63C BDX63 BDX63A BDX63B BDX63C

    181T2

    Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
    Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


    Original     		PDF BDY23, BDY24, BDY25, 180T2 181T2 182T2 181T2 182T2 180T2 BDY24 BDY23 BDY25 181T2 B

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage


    Original     		PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A

    BD142

    Abstract: bd142 equivalent
    Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.


    Original     		PDF BD142 BD142 bd142 equivalent

    BD142

    Abstract: Comset Semiconductors
    Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.


    Original     		PDF BD142 BD142 Comset Semiconductors

    BDX66C

    Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
    Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage


    Original     		PDF BDX66 BDX66A BDX66B BDX66C BDX66C BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A