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    COMPRESSION Search Results

    COMPRESSION Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    10151209-001TRLF Amphenol Communications Solutions 22 Positions, Compression Connector,surface Mount,vapour phase soldering Visit Amphenol Communications Solutions
    10152744-001LF Amphenol Communications Solutions 18 Positions, Compression Connector,surface Mount,vapour phase soldering Visit Amphenol Communications Solutions
    SF Impression Pixel

    COMPRESSION Price and Stock

    Automation Components Inc A-1-4--COMPRESSION-FITTING

    1/4" Compression Fitting
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    DigiKey A-1-4--COMPRESSION-FITTING Bulk 1
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    ITT Interconnect Solutions SPRING COMPRESSION 25# LOAD *VMI*KN

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    Avnet Americas SPRING COMPRESSION 25# LOAD *VMI*KN Bulk 128
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    ITT Interconnect Solutions SPRING COMPRESSION 25# LOAD

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    Avnet Americas SPRING COMPRESSION 25# LOAD Bulk 13 Weeks 128
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    Mouser Electronics SPRING COMPRESSION 25# LOAD
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    ITT Interconnect Solutions 980-0003-422

    Circular MIL Spec Connector
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    Mouser Electronics 980-0003-422
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    ITT Interconnect Solutions SPRING COMPRESSION 25# LOAD *V

    Rack & Panel |Itt Cannon SPRING COMPRESSION 25# LOAD *V
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    Newark SPRING COMPRESSION 25# LOAD *V Bulk 128
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    COMPRESSION Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Compression driver catalog Unknown Original PDF
    Compression driver-horn catalog Unknown Original PDF

    COMPRESSION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments TGA8300 Monolithic 2- to 18-GHz Amplifier Features • ■ ■ ■ ■ 18-dBm typical output power at 1-dB gain compression 6.5-dB gain Input and output SWR less than 2:1 Size: 0.093 x 0.064 x 0.006 inch Recessed V ^ m gate structure Description


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    TGA8300 18-GHz 18-dBm TGA8300 PDF

    TIM1414-4LA-371

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation


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    TIM1414-4LA-371 TIM1414-4LA-371 PDF

    Untitled

    Abstract: No abstract text available
    Text: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description


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    TGM8014 TGA8014 PDF

    Untitled

    Abstract: No abstract text available
    Text: Apr. 1998 T IM 3 7 4 2 -4 5 S L -3 4 1 1. RF PERFORMANCE SPECIFICATIONS f Ta= 25 °C CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at 1dB 46.0 46.5 PldB — dBm Compression Point VDS= 10V GldB — Power Gain at 1dB 10.0 f=3.3-3.6GHz —


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    TIM3742-45SL-34I 3600mfl, PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm


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    TIM1414-7-252 IGS---72pA PDF

    TRF1015

    Abstract: No abstract text available
    Text: TRF1015 CELLULAR RECEIVER FRONT-END ^ • • • • • • • • • - JUNE 1996 Low-Noise Amplifier LNA , Radio Frequency (RF) Mixer, and Voltage-Controlled Oscillator (VCO) High 1-dB Compression Mode


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    TRF1015 SLWS021 900-MHz 20-Pin SR8800LPQ1050BY BBY51-03W SAFC881 5MA70N LL2012. PDF

    Untitled

    Abstract: No abstract text available
    Text: Oct. 1998 PRELIMINARY TIM5964-4SL-031 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at ldB PldB 35.5 36.5 dBm Compression Point Vds= 10V Power Gain at ldB GldB f-5.9-6.4GHz 8.0 9.0 dB IDS-1.1A


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    TIM5964-4SL-031 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


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    28dBm JS9P05-AS 38GHz PDF

    5252 F ic

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-5-252 1. R F PERFO R M A N CE SP E C IFIC A T IO N S CHARACTERISTICS SYMBOL Output Power at ldB Compression Point P i dB Power Gain at ldB Compression Point GldB CONDITION MIN. TYP. MAX. UNIT 36.5 37.5 — dBm 4.5 5.5 — dB - 2.0


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    TIM1414-5-252 -72jjA 5252 F ic PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-15L RF Performance Specifications Ta = 25°C Characteristic Symbol Output Power at 1 dB Compression Point P 1dB Power Gain at 1dB Compression Point G 1dB Condition Unit Min. Typ. Max. dBm 41.0 42.0 - dB 6.0 7.0 -


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    TIM1011-15L PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids


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    TIM1414-15-252 145mA 2-11C1B) PDF

    dual-gate

    Abstract: TGA8622 amplifier 1 2 ghz
    Text: Texas Instruments TGA8622 Monolithic 2- to 20-GHz Dual-Gate Distributed Amplifier Features • 7.5-dB gain with greater than 30-dB gain control capability ■ 20-dBm output power at 1-dB gain compression ■ 7-dB noise figure ■ Input and output SWR less than 2.3:1 over


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    TGA8622 20-GHz 30-dB 20-dBm TGA8622 dual-gate amplifier 1 2 ghz PDF

    TGA8061

    Abstract: No abstract text available
    Text: Texas Instruments TGA8061 Monolithic 100-MHz to 3.5-GHz Low-Noise Amplifier Features • 3-dB bandwidth exceeds 5 octaves ■ 2.4-dB noise figure with low input and output SWR ■ 18.0-dB gain ■ 15-dBm output power at 1-dB gain compression ■ Operates from single 12-volt supply


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    TGA8061 100-MHz 15-dBm 12-volt TGA8061 mix111 PDF

    947-75

    Abstract: No abstract text available
    Text: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm


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    JS9P08-AS -800faA 947-75 PDF

    zener diode c12

    Abstract: ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener
    Text: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And


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    1N4728G-1N4758G DO-41 DO-41 56Volts. MIL-STD-202, 260oC//10 zener diode c12 ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener PDF

    TML9052

    Abstract: No abstract text available
    Text: RF LIMITING AMPLIFIER MODEL TML9052 Available as: TML9052, 5 Pin TO-8 T5 TNL9052, 4 Pin Surface Mount (SM3) BXL9052, Connectorized Housing (H1) Features „ „ „ „ Absolute Maximum (No Damage) Ratings Frequency: 5 to 500 MHz Low Phase Shift per dB of Compression


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    TML9052 TML9052, TNL9052, BXL9052, TML9052 PDF

    EMP212

    Abstract: No abstract text available
    Text: EMP212-Q5 9.5 – 12.0 GHz Surface-Mounted PA UPDATED: 04/24/2008 FEATURES • • • • • 9.5 – 12.0 GHz Operating Frequency Range 30 dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm 5X5 mm QFN Package


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    EMP212-Q5 -40dBc 800mA) EMP212 EMP212 PDF

    Untitled

    Abstract: No abstract text available
    Text: EIC1010A-12 10.0-10.25 GHz 12-Watt Internally Matched Power FET ISSUED: 07/24/2007 Excelics FEATURES • • • • • • .024 EIC1010A-12 .827±.010 .669 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression


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    EIC1010A-12 12-Watt 25GHz 25GHz PDF

    Untitled

    Abstract: No abstract text available
    Text: RFMA1214-0.5W-Q7 12.5– 14.5GHz High Gain Surface-Mounted PA UPDATED: 04-24-2008 FEATURES • • • • • 12.5 – 14.5GHz Operating Frequency Range 26.5dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout 16.5dBm/tone


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    RFMA1214-0 -41dBc PDF

    Untitled

    Abstract: No abstract text available
    Text: EIC1314-12 13.75-14.50 GHz 12-Watt Internally Matched Power FET ISSUED 10/17/2008 FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression


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    EIC1314-12 12-Watt 50GHz PDF

    RFMA2124-2W

    Abstract: No abstract text available
    Text: RFMA2124-2W-P3 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 01/09/2007 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm


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    RFMA2124-2W-P3 -39dBc 20dBm RFMA2124 RFMA2124-2W PDF

    Untitled

    Abstract: No abstract text available
    Text: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm


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    EIM1011-4 -45dBc 22dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: EID1718A1-4 17.3–18.1 GHz 4-Watt Internally-Matched Power FET UPDATED: 07/12/2007 FEATURES • 17.3-18.1 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 25% Power Added Efficiency


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    EID1718A1-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: EID1616A1-12 16.0-16.5 GHz 12-Watt Internally Matched Power FET UPDATED 07/12/2007 FEATURES • 16.0-16.5 GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41.0 dBm Output Power at 1dB Compression • 5.0 dB Power Gain at 1dB Compression • 23% Power Added Efficiency


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    EID1616A1-12 12-Watt PDF