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    COMMON BASE AMPLIFIER CIRCUIT Search Results

    COMMON BASE AMPLIFIER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    COMMON BASE AMPLIFIER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSH24

    Abstract: MMBTH24 MPSH11
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MPSH24 MMBTH24

    MMBTH24

    Abstract: MPSH11 MPSH24
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MMBTH24 MPSH24

    MPSH34

    Abstract: MPSH11
    Text: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET


    Original     		PDF MPSH34 100mA 300MHz, MPSH11 MPSH34

    MMBTH34

    Abstract: MPSH11
    Text: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.


    Original     		PDF MMBTH34 100mA 300MHz, MPSH11 OT-23 MMBTH34

    C1995

    Abstract: national semiconductor marking RRD-B30M115 IE A150 MMBTH34 ICE20 IC Marking M03 8548
    Text: MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 mA to 15 mA range to 300 MHz and low frequency drift common-base VHF oscillator applications with high output levels for driving


    Original     		PDF MMBTH34 MMBTH34-3K C1995 national semiconductor marking RRD-B30M115 IE A150 ICE20 IC Marking M03 8548

    MRF1375

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF1375/D MRF1375 MRF1375/D* MRF1375

    MRF10500

    Abstract: motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC
    Text: MOTOROLA Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.


    Original     		PDF MRF10500/D MRF10500 MRF10501 MRF10500 MRF10500/D* motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC

    2SC3611

    Abstract: No abstract text available
    Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range


    Original     		PDF 2SC3611 O-126B 2SC3611

    motorola J122

    Abstract: MOTOROLA transistor 413 transistor j380 51 MRF10350
    Text: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10350 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF10350/D MRF10350 MRF10350/D* MRF10350/D motorola J122 MOTOROLA transistor 413 transistor j380 51

    motorola rf Power Transistor

    Abstract: Motorola Microwave power Transistor 376B MRF10150 MRF10500 TACAN 41 Motorola 406
    Text: MOTOROLA Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF10150/D MRF10150 MRF10150/D* motorola rf Power Transistor Motorola Microwave power Transistor 376B MRF10150 MRF10500 TACAN 41 Motorola 406

    MRF1015MB

    Abstract: 1090
    Text: MOTOROLA Order this document by MRF1015MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1015MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		PDF MRF1015MB/D MRF1015MB MRF1015MB 1090

    MRF1004MB

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    Original     		PDF MRF1004MB/D MRF1004MB MRF1004MB

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


    OCR Scan     		PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

    NF4-5V

    Abstract: capacitor feed-through ERIE ceramic capacitor
    Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.


    OCR Scan     		PDF OT437A AT-3-7-271SL PLB16012U NF4-5V capacitor feed-through ERIE ceramic capacitor

    EUROFARAD capacitor

    Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
    Text: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.


    OCR Scan     		PDF MTB10010U EUROFARAD capacitor erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor

    Epsilam-10

    Abstract: epsilam 10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850-960 MHz. • Motorola Advanced Amplifier Concept Package


    OCR Scan     		PDF MRF898 Epsilam-10 epsilam 10

    Untitled

    Abstract: No abstract text available
    Text: October 1985 MMBTH34 Surface Mount NPN RF-IF Amp General Description This device was designed for common-emitter low noise amplifier and mixer applications in the 100 p-A to 15 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    OCR Scan     		PDF MMBTH34 MMBTH34-3K

    philips capacitor 470

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency Microwave performance up to T mb = 25 °C in a common base class C broadband amplifier.


    OCR Scan     		PDF MZ0912B50Y 01KP50X philips capacitor 470

    transistor 1BT

    Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
    Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium


    OCR Scan     		PDF R02731B50W transistor 1BT transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor

    STT 433

    Abstract: variable capacitor erie ceramic RX1214B170W Tekelec
    Text: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor FEATURES RX1214B170W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium


    OCR Scan     		PDF RX1214B170W FO-91B. 71106Eb STT 433 variable capacitor erie ceramic RX1214B170W Tekelec

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz


    OCR Scan     		PDF MRF10500 MRF10501 MRF10501 b3b72S5 0CH2405

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		PDF MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak


    OCR Scan     		PDF MRF10500 MRF10350 MRF10070

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1004MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF1004MB Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


    OCR Scan     		PDF MRF1004MB/D MRF1004MB MRF1004MB 32A-03