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    CODE TQ SMD Search Results

    CODE TQ SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    CODE TQ SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p381

    Abstract: code tq smd
    Text: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25 V J105C f製品自己発熱含むg K25 V J105C fIncluding self-generated heatg 特長 FEATURES YSMD inductor. YIt corresponds to High current. YSimple and original magnetic shield structure. YSMDインダクタ


    Original     		PDF J105C 394M0 386M0 197maxg p381 code tq smd

    NR3015

    Abstract: nr4018 NR4010 m20l NR3010 p382 NR3012 p362 NR4012
    Text: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25VJ120C f製品自己発熱含むg K25VJ120C fInducting self-generated heatg 特長 FEATURES YSmall and Low profile inductor. YIt corresponds to High current. YSimple and original magnetic shield structure.


    Original     		PDF K25VJ120C NR3015 nr4018 NR4010 m20l NR3010 p382 NR3012 p362 NR4012

    1n0K 63

    Abstract: 2012TYPE
    Text: CERAMIC CHIP INDUCTORS •OPERATION TEMP. -25~+85℃ Including self-generated heat ■FEATURES ABCO chip inductor is wire wound type ceramic inductor. And our product provide high Q value. So ABCO chip inductor can be SRF(self resonant frequency)industry.


    Original     		PDF 2012TYPE 1608TYPE 1005TYPE05 HP4287A) 6193A HP8753D) 390nH) 1n0K 63 2012TYPE

    TA0152A

    Abstract: No abstract text available
    Text: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 942.5 MHz 35MHz Bw For EGSM SMD 3.0x3.0


    Original     		PDF 35MHz TA0152A 10sec) TA0152A

    mosfet controlled thyristor

    Abstract: mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller
    Text: Product Nomenclature Diode Dice C-DWEP 69-12 Sample A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function


    Original     		PDF 1-42RD mosfet controlled thyristor mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller

    MT46H64M32

    Abstract: MT46H128 MT46H64M32L2CG-6 MT46H128M 152-Ball lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ
    Text: 152-Ball x32 Mobile LPDDR only PoP (TI-OMAP) Features Mobile LPDDR (only) 152-Ball Package-on-Package (PoP) TI-OMAP MT46HxxxMxxLxCG MT46HxxxMxxLxKZ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)


    Original     		PDF 152-Ball MT46HxxxMxxLxCG MT46HxxxMxxLxKZ 09005aef833913f1/Source: 09005aef833913d6 MT46H64M32 MT46H128 MT46H64M32L2CG-6 MT46H128M lpddr MT46H128M32 micron lpddr 128M32 MT46H128M32L4KZ

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


    Original     		PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		PDF 168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		PDF 168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET

    transistor smd MJ 145

    Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
    Text: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter


    OCR Scan     		PDF q67042-s4131 np-60 transistor smd MJ 145 d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145

    smd diode code WP

    Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
    Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-A1190 OD-323 50/60Hz, smd diode code WP diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode

    JJ SMD diode

    Abstract: diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W
    Text: SIEMENS BAR 64-02W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • Very low inductance • For frequencies up to 3 GHz • Extremely small plastic SMD package


    OCR Scan     		PDF 4-02W Q62702-A1215 SCD-80 100MHz JJ SMD diode diode smd marking WP smd diode marking JJ 6 pin smd diode 140KW 6402W

    R472

    Abstract: 4512c U 2554 b code tq smd
    Text: PD-2.554 03/98 Inte rn ation al IQ R Rectifier 12CTQ.S SERIES SCHOTTKY RECTIFIER 12 Amp Major R atings and C h a racte ristics D e scrip tio n /Features C h aracteristics 1 2C TQ .S U n its lp AV Rectangular 12 A 35 to 45 V IpSM @ 1p = 5fissine 690 A


    OCR Scan     		PDF 12CTQ. SMD-220) SMD-220 R472 4512c U 2554 b code tq smd

    S27C256

    Abstract: No abstract text available
    Text: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC — 120 ns Access Time • EPI Processing — Latch-Up Immunity to 200 mA • Fast Programming — ESD Protection Exceeds 2000 Volts • DESC SMD No. 5962-86063


    OCR Scan     		PDF WS27C256L S27C256L MIL-STD-883C WS27C256L-12DMB* WS27C256L-12TMB* WS27C256L-15DMB* WS27C256L-15TMB* S27C256

    VAOL-S12WR4

    Abstract: No abstract text available
    Text: 1206 SMD TYPE LED OPTOELECTRONICS VAOL-S12WR4 ligh ting:thew ay Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • • • For higher packing density .


    OCR Scan     		PDF VAOL-S12WR4 VAOL-S12WR4

    Diode smd code BU

    Abstract: D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT
    Text: Super Fast Recovery Diode mtmm o u t l i n e Single Diode D1FK60 U nit I mm Package I 1F Weight 0.058g Typ a v -K -7 -» ' Cathode* mark 600V 0.8A 11 r | Feature • • • • •H Ü H Œ • trr=75ns • V f =1.3V 1 Small SMD High Voltage trr=75ns


    OCR Scan     		PDF D1FK60 J532-1) Diode smd code BU D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT

    smd code p5

    Abstract: draloric cr cr0805 draloric SMD 1206 RESISTOR smm0204
    Text: EM UNTERNEHMEN VON DRALORIC SMD CRT. Thin Film Flat Resistor T Features • stable film structu re • tight T.C. range and close tolerances • excellent load life and climatic stability • suitable for precision electronic applications Style Style


    OCR Scan     		PDF CRT0805 10R-100K 10R-100K 00Q07flb smd code p5 draloric cr cr0805 draloric SMD 1206 RESISTOR smm0204

    SP*02N60

    Abstract: transistor smd hq
    Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252


    OCR Scan     		PDF SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq

    BYT 56 diode

    Abstract: smd transistor marking TQ smd diode JD BYt 32
    Text: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on


    OCR Scan     		PDF SPPX4N60S5 VPT05154 SPBX4N60S5 X4N60S5 P-T0220-3-1 P-T0263-3-2 SPPX4N60S5: BYT 56 diode smd transistor marking TQ smd diode JD BYt 32

    transistor SMD QQ

    Abstract: No abstract text available
    Text: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D


    OCR Scan     		PDF SPD30N03L SPU30N03L P-T0252 Q67040-S4148-A2 P-T0251 Q67040-S4149-A2 transistor SMD QQ

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan     		PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5

    sot-223 body marking A G Q E

    Abstract: TRANSISTOR SMD MARKING CODE ag
    Text: SIEMENS SPNX6N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ros{on ¡n SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type V^DS SPNX6N60S5 600 V


    OCR Scan     		PDF SPNX6N60S5 X6N60S5 P-SOT223-4-1 SPNX6N60S5 sot-223 body marking A G Q E TRANSISTOR SMD MARKING CODE ag