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    CMPT3410 Search Results

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    CMPT3410 Price and Stock

    Central Semiconductor Corp CMPT3410 TR PBFREE

    Transistor GP BJT NPN 25V 1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: CMPT3410 TR PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMPT3410 TR PBFREE Reel 6,000
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    • 10000 $0.13353
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    Mouser Electronics CMPT3410 TR PBFREE
    • 1 -
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    • 10000 $0.125
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    Central Semiconductor Corp CMPT3410 TR

    Bipolar Transistor NPN Low VCE(SAT) 1A 25V 3-Pin SOT-23 Surface Mount T/R - Tape and Reel (Alt: CMPT3410 TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMPT3410 TR Reel 3,000
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    CMPT3410 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CMPT3410 Central Semiconductor SURFACE MOUNT NPN SILICON LOW VCE (SAT) TRANSISTOR Original PDF

    CMPT3410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c341 transistor

    Abstract: C341 CMPT3410 MV TRANSISTOR SOT23 V30010
    Text: CMPT3410 SURFACE MOUNT LOW VCE SAT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is


    Original     		PDF CMPT3410 CMPT3410 OT-23 100mA, 200mA, 500mA, 800mA, 100mA c341 transistor C341 MV TRANSISTOR SOT23 V30010

    c341 transistor

    Abstract: diode c341 MV TRANSISTOR SOT23 transistor MV sot23 V30010 transistor c341 C341 Silicon NPN Epitaxial Planar Type CMPT3410 vce 100 ic 100MA NPN
    Text: Central CMPT3410 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON LOW VCE SAT TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE (SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is


    Original     		PDF CMPT3410 CMPT3410 OT-23 800mA, 100mA 500mA 100MHz c341 transistor diode c341 MV TRANSISTOR SOT23 transistor MV sot23 V30010 transistor c341 C341 Silicon NPN Epitaxial Planar Type vce 100 ic 100MA NPN

    c341 transistor

    Abstract: C341
    Text: CMPT3410 SURFACE MOUNT LOW VCE SAT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is


    Original     		PDF CMPT3410 OT-23 100mA, 200mA, 500mA, 800mA, 100mA c341 transistor C341

    CMLT3410

    Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


    Original     		PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V CXT3410

    a42e

    Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
    Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		PDF OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original     		PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    transistor

    Abstract: CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


    Original     		PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 transistor CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V chip die npn transistor

    CMLT3410

    Abstract: CMPT3410 CMST3410 CMUT3410 CP341V CXT3410
    Text: PROCESS CP341V Small Signal Transistors NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 x 18 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.8 x 3.8 MILS Emitter Bonding Pad Area 3.8 x 3.8 MILS Top Side Metalization


    Original     		PDF CP341V CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 22-March CMLT3410 CMPT3410 CMST3410 CMUT3410 CP341V CXT3410