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    CMPA2735075D Price and Stock

    MACOM CMPA2735075D

    75W, GAN MMIC POWER AMPLIFIER, 2
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    DigiKey CMPA2735075D Tray 25
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    Mouser Electronics CMPA2735075D
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    CMPA2735075D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA2735075D CMPA2735075D PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA2735075D CMPA2735075D PDF

    CMPA2735075D

    Abstract: No abstract text available
    Text: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher


    Original     		CMPA2735075D CMPA2735075D PDF