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    CMOS TESTING ABSTRACT Search Results

    CMOS TESTING ABSTRACT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    FO-62.5LPBMT0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBMT0-001 MT-RJ Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFP28LPB1W-3DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption Datasheet
    FO-50LPBMTRJ0-001 Amphenol Cables on Demand Amphenol FO-50LPBMTRJ0-001 MT-RJ Connector Loopback Cable: Multimode 50/125 Fiber Optic Port Testing .1m Datasheet

    CMOS TESTING ABSTRACT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SN74ACT16245DL

    Abstract: act16245 texas cmos SN74ACT16245D EN-4088Z SN74HC00N SN74HC42D TEXAS INSTRUMENTS, Mold Compound TS-095 cmos testing abstract
    Text: TEXAS INSTRUMENTS Notification of Wafer Thickness Reduction from 15 and 13 Mils to 11 Mils December 5, 1996 Abstract Texas Instruments Advanced System Logic is reducing wafer thickness from 15 and 13 mils to 11 mils for all CMOS and BiCMOS technologies in all Wafer Fabrication Sites producing these


    Original     		PDF HC00N ACT16245DL ABT245ADB SN74ACT16245DL act16245 texas cmos SN74ACT16245D EN-4088Z SN74HC00N SN74HC42D TEXAS INSTRUMENTS, Mold Compound TS-095 cmos testing abstract

    rom radiation

    Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
    Text: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.


    Original     		PDF 80C32E/80C52E 80C32E/80C52E 30Krad 30Mhz 80C32E. 80C52E rom radiation 80c32e 80C52 80c52 basic 40Krad

    80C32E

    Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
    Text: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up


    Original     		PDF 80C32E/80C52E 30Krad 30MHz 80C32E. 80C32E 30MHz, 80C52E 73E-08 80C52 rom radiation 0.8um cmos 87E-08

    tl 4013

    Abstract: 54ACT373 54ACT174 NS-28 watson smith 54AC163 54AC299 AN-989 AT22V10B C1995
    Text: National Semiconductor Application Note 989 M Maher R Koga et al The Aerospace Corp April 1995 ABSTRACT A comparison of single event upset and latchup test results for devices operated at several bias levels from 2 5V to 6V is reported Vulnerability to SEU increased with decreasing


    Original     		PDF 20-3A tl 4013 54ACT373 54ACT174 NS-28 watson smith 54AC163 54AC299 AN-989 AT22V10B C1995

    MCT-2000

    Abstract: 54AC161 54AC14 hughes radiation transistor SMD para inverter 54AC245 AN-927 C1995 aero transceiver K100L
    Text: National Semiconductor Application Note 927 Michael Maher October 1994 ABSTRACT This paper examines the impact of using an Advanced CMOS product in a low voltage 3 3 VDC application which is subjected to a total ionizing dose environment Results from this investigation(1) demonstrate a significant


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    krad

    Abstract: 67025E TM1019 RAM SEU
    Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity


    Original     		PDF 8Kx16 50Krad 10Krad 35Krad NT94055, 9849/92/NL, krad 67025E TM1019 RAM SEU

    8Kx16

    Abstract: TM1019
    Text: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port


    Original     		PDF 8Kx16 NT94055, 9849/92/NL, TM1019

    Dose

    Abstract: TM1019 Single Supply Operation cross SCC22900
    Text: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the


    Original     		PDF 72Kbit) 50Krad 35Krad EHR95056, 9849/92/NL, 11Mars Dose TM1019 Single Supply Operation cross SCC22900

    35CL

    Abstract: TM1019 79br
    Text: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out


    Original     		PDF 72Kbit) 50Krad 35Krad january92 EHR95056, 9849/92/NL, 35CL TM1019 79br

    60Co

    Abstract: No abstract text available
    Text: Intersil White Paper Specialty Products Space and Defense Wafer by Wafer Low Dose Rate Acceptance Testing in a Production Environment Abstract—This White Paper describes technical details of a wafer by wafer low dose rate acceptance testing program being implemented for all Intersil radiation hardened products. We


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    74x244

    Abstract: 74xxx240 74XXX244 617 connector 74xx*240 AN-737
    Text: Fairchild Application Note 737 James W. Davison February 1998 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and drive has come the consequence of greater device generated noise. Noise is an important consideration when designing systems with todays advanced logic circuits. Device


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    74x244

    Abstract: AN-737 AN-640 AN-680 74XXX244 wy 15D
    Text: Fairchild Semiconductor Application Note November 1990 Revised June 2001 Device Generated Noise Measurement Techniques Abstract In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly. However, along with the advantages of increased speed and


    Original     		PDF AN-737 74x244 AN-640 AN-680 74XXX244 wy 15D

    74x244

    Abstract: 74XXX240 AN-640 AN-680 AN-737 C1995 P6201 74XXX244 AN64 AN-680 national
    Text: National Semiconductor Application Note 737 James W Davison January 1991 ABSTRACT In recent years the speed and drive capability of advanced digital integrated circuitry has increased significantly However along with the advantages of increased speed and drive has come the consequence of greater device generated noise Noise is an important consideration when designing systems with todays advanced logic circuits Device


    Original     		PDF 20-3A 74x244 74XXX240 AN-640 AN-680 AN-737 C1995 P6201 74XXX244 AN64 AN-680 national

    Dose

    Abstract: transistor study Marconi radiation hard
    Text: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates


    Original     		PDF 300Krad Dose transistor study Marconi radiation hard

    74AHC1G32DBV

    Abstract: 74AHC1G00 74AHC1G04 SN74AHC1G00 SN74AHC1G08 SN74AHC1G32 SN74AHCT1G00 SN74AHCT1G08 SN74AHCT1G32 AHCT 125
    Text: TEXAS INSTRUMENTS Informational Notification for Several AHC/AHCT Devices, Die Revision ‘C’ April 24, 1998 Abstract Texas Instruments has qualified several AHC/AHCT devices, die revision ‘C’ for the new DCK package. Die revision ‘C’ is a product redesign that includes a die shrink to fit the new


    Original     		PDF

    transistor MN1

    Abstract: NAND Qualification Reliability HC00D SN74HC00 texas instruments lot trace code EN-4088Z HC00 HCT00 SN74HCT00 S01-06800
    Text: TEXAS INSTRUMENTS Qualification Notification for the SN74HC00 and SN74HCT00, Die Revision K August 20, 1997 Abstract Texas Instruments qualified the SN74HC00 and SN74HCT00 die revision K, to replace the SN74HC00 die revision F and the SN74HCT00 die revision G. Die revision K is a product


    Original     		PDF SN74HC00 SN74HCT00, SN74HCT00 S01-06800 transistor MN1 NAND Qualification Reliability HC00D texas instruments lot trace code EN-4088Z HC00 HCT00

    54ALS374

    Abstract: 54HCT374 54AC00 seu boron rods 54AC04 seu 54AC374 p-channel mosfet 9240 54AC00 54ALS374/BRAJC 54AC04
    Text: National Semiconductor Application Note 925 M C Maher January 1994 ABSTRACT Radiation test data is presented for different radiation environment as performed on National Semiconductor’s FACTTM Advanced CMOS microcircuit family Over twenty device types have been evaluated by independent investigators users and by National


    Original     		PDF n-type-k100l 20-3A 54ALS374 54HCT374 54AC00 seu boron rods 54AC04 seu 54AC374 p-channel mosfet 9240 54AC00 54ALS374/BRAJC 54AC04

    74AHCT04

    Abstract: 74AHCT241 74HCT241 J1850 TMS470 CMOS to TTL logic level shifters 3.3v to 5v interface components cmos open collector
    Text: Application Report SPNA087 3.3 Volt Microprocessors in an Industrial Environment Jim Childers TMS470 Microcontroller Abstract As new generations of microcontrollers lower their supply voltages from 5 volts to 3.3 volts and beyond, issues with interfacing and noise are increasing. This appnote presents cost-effective


    Original     		PDF SPNA087 TMS470 SCAD001C 74AHCT04 74AHCT241 74HCT241 J1850 CMOS to TTL logic level shifters 3.3v to 5v interface components cmos open collector

    SZZA036B

    Abstract: cd4000 SCAA035 LVC16374 cd4000 logic devices SN54LVTH16646 SN74AHCT16541 SN74LVCC3245 SN74LVCC4245 JEP103A
    Text: Application Report SZZA036B - May 2003 Understanding and Interpreting Standard-Logic Data Sheets Stephen M. Nolan and Jose M. Soltero Standard Linear & Logic ABSTRACT Texas Instruments TI standard-logic products data sheets include descriptions of functionality and electrical specifications for the devices. Each specification includes


    Original     		PDF SZZA036B cd4000 SCAA035 LVC16374 cd4000 logic devices SN54LVTH16646 SN74AHCT16541 SN74LVCC3245 SN74LVCC4245 JEP103A

    EPIC-1S

    Abstract: 74ACT245 EN-4088Z SN74ACT245N EN4088Z
    Text: TEXAS INSTRUMENTS Notification for the Addition of CMOS Process to the Sherman Wafer Fabrication Site November 26, 1996 Abstract Texas Instrument’s Sherman Wafer Fabrication Facility has qualified the EPIC-1S CMOS process. The HC, AC, ACT, LV, AHCT and AHC product families are produced from this process and may be


    Original     		PDF EN-4088Z ACT245N EPIC-1S 74ACT245 EN-4088Z SN74ACT245N EN4088Z

    SN74ALVC16425

    Abstract: SN74ALVC164245A SN74ALVC164245 SN74LVC4245A SN74LVCC3245A SN74LVCC4245A
    Text: Application Report SCEA021A - September 2002 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage


    Original     		PDF SCEA021A SN74LVCC3245A, SN74LVC4245A, SN74LVCC4245A, SN74ALVC164245. SN74ALVC16425 SN74ALVC164245A SN74ALVC164245 SN74LVC4245A SN74LVCC3245A SN74LVCC4245A

    DAC121S101WGRQV

    Abstract: Micro Linear cross DAC121S101 DAC121S101QML LM124 F-1192 DAC121S101QMLV output impedance calculation in LM124 JESD57
    Text: Single Event Transient Response Dependence on Operating Conditions for a Digital to Analog Converter Kirby Kruckmeyer, Member, IEEE, James S. Prater, Bill Brown and Sandeepan DasGupta Abstract—The Single Event Effect SEE characterization of a Digital to Analog Converter (DAC) showed an unexpected Single


    Original     		PDF

    SN74ALVC16425

    Abstract: SCEA021 SN74ALVC4245 SN74ALVC4245A SN74LVCC3245A SN74ALVC164245 SN74LVC4245A SN74LVCC4245A
    Text: Application Report SCEA021 - February 2001 Texas Instruments Voltage-Level-Translation Devices Nadira Sultana and Chris Cockrill Standard Linear & Logic ABSTRACT In electronic systems design, there is a need to provide an interface between different voltage


    Original     		PDF SCEA021 SN74LVCC3245A, SN74LVC4245A, SN74LVCC4245A, SN74ALVC164245. SN74ALVC16425 SN74ALVC4245 SN74ALVC4245A SN74LVCC3245A SN74ALVC164245 SN74LVC4245A SN74LVCC4245A

    AUC Family

    Abstract: SN74AUC16245 SN74AUC245 SN74AUCH245 SCEA033
    Text: Application Report SCEA033 - April 2003 Designing With TI Ultra-Low-Voltage CMOS AUC Octals and Widebus Devices Sagir Hasnain, Gene Hinterscher, and Will Hutchinson Standard Linear & Logic ABSTRACT System designers are continuously seeking ways to improve signal integrity, increase speed,


    Original     		PDF SCEA033 AUC Family SN74AUC16245 SN74AUC245 SN74AUCH245