736e-02
Abstract: cross reference 4533 UT7Q512
Text: UTMC Application Note A Radiation Tolerant 4M SRAM for Space Applications Abstract Total ionizing dose and heavy ion single event effects data are presented for a radiation tolerant 100ns 4M SRAM UT7Q512 . The SRAM is shown to be resistant to between 20 and 35krad(Si) of total dose radiation (depending on the particular lot examined) at a relatively high dose rate of 46rad(Si)/s. The SRAM is
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100ns
UT7Q512)
35krad
46rad
128MeV-cm
10-year
88-Inch
NS-30,
NS-29,
736e-02
cross reference 4533
UT7Q512
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rom radiation
Abstract: 80c32e 80C52 80C52E 80c52 basic 40Krad
Text: Evaluation Report Radiation Tolerance of the 80C32E/80C52E by Thierry CORBIERE Abstract The radiation tolerant version of the 8-bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions.
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80C32E/80C52E
80C32E/80C52E
30Krad
30Mhz
80C32E.
80C52E
rom radiation
80c32e
80C52
80c52 basic
40Krad
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krad
Abstract: 67025E TM1019 RAM SEU
Text: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity
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8Kx16
50Krad
10Krad
35Krad
NT94055,
9849/92/NL,
krad
67025E
TM1019
RAM SEU
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80C32E
Abstract: 73E-08 80C52E 80C52 rom radiation 0.8um cmos 87E-08
Text: SCMOS1 SCMOS1 Technology 80C32E/80C52E Microcontrollers – Tolerance to Radiation Abstract The radiation tolerant version of the 8–bit micro controller 80C32E/80C52E has been tested against the two major concerns of the outer space environment, total dose and heavy ions. 30Krad Si , 30MHz and latch–up
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80C32E/80C52E
30Krad
30MHz
80C32E.
80C32E
30MHz,
80C52E
73E-08
80C52
rom radiation
0.8um cmos
87E-08
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Dose
Abstract: transistor study Marconi radiation hard
Text: Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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300Krad
Dose
transistor study
Marconi radiation hard
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Marconi radiation hard
Abstract: hm65656 transistor study
Text: Dose Rate Effects Investigations of Dose Rate Effects on CMOS Submicronic Technologies Thierry CORBIERE 1 – Jean Louis VENTURIN(2) MATRA MHS, Nantes France (2) CNES, Toulouse France (1) Abstract Majority of the TOTAL DOSE evaluations of MOS devices are made by using Cobalt 60 sources at dose rates
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300Krad
Marconi radiation hard
hm65656
transistor study
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Dose
Abstract: TM1019 Single Supply Operation cross SCC22900
Text: SCMOS1/2 SCMOS1/2 Technology FIFO Family up to 72Kbit – Tolerance to Radiation 1. Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out RAM manufactured using the Radiation Tolerant version of the
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72Kbit)
50Krad
35Krad
EHR95056,
9849/92/NL,
11Mars
Dose
TM1019
Single Supply Operation cross
SCC22900
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35CL
Abstract: TM1019 79br
Text: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family up to 72Kbit Tolerance to Radiation by Thierry CORBIERE (1) Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during heavy ion testing for the First In First Out
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72Kbit)
50Krad
35Krad
january92
EHR95056,
9849/92/NL,
35CL
TM1019
79br
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8Kx16
Abstract: TM1019
Text: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port RAM 8Kx16 Tolerance to Radiation by Thierry CORBIERE 1 Work partially funded by French Space Agency [1] Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port
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8Kx16
NT94055,
9849/92/NL,
TM1019
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VC02C
Abstract: No abstract text available
Text: fllL Micro Linear ^ June 1996 PRELIMINARY ML6311 3V /5V Read Channel Back-end Processor GEN ERAL D ESCRIPTION FEATURES The ML6311 is a BiCMOS Read Channel Back-end Processor IC w hich is one half o f the disk read channel chipset from M ic ro Linear, intended for the next
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ML6311
L6310
VC02C
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ML601
Abstract: No abstract text available
Text: June 1996 PRELIMINARY % M iefo Linear ML6013 3.5" R/W MOD Read Channel Back-end Processor GENERAL DESCRIPTION FEATURES The ML6013 is a Read Channel Back-end processor for 3.5“ Rewritable Magneto-Optical drives MOD . It works in conjunction with the ML6012 Read Channel Front-end
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ML6013
ML6012
ML6013
ML6013CH
32-Pin
ML601
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Untitled
Abstract: No abstract text available
Text: June 1996 PRELIM INARY ^Ék Micro Linear ML6013 3.5" R/W MOD Read Channel Back-end Processor GENERAL DESCRIPTION FEATURES The ML6013 is a Read Channel Back-end processor for 3.5" Rewritable Magneto-Optical drives M OD . It works in conjunction with the M L6012 Read Channel Front-end
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ML6013
ML6013
L6012
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22pff
Abstract: l6310 st
Text: May 1994 PRELIM IN ARY M icro Linear ML6311 3V/5V Read Channel Back-end Processor GENERAL DESCRIPTION FEATURES The ML6311 is a BiCM O S Read Channel Back-end Processor IC w hich is one half of the disk read channel chipset from Micro Linear, intended for the next
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ML6311
ML6311
L6310
32-pin
22pff
l6310 st
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vc03
Abstract: No abstract text available
Text: October 1994 PRELIMINARY M icro Linear ML6013 3.5" R/W M O D Read Channel Back-end Processor GENERAL DESCRIPTION FEATURES The ML6013 is a Read Channel Back-end processor for 3.5" Rewritable Magneto-Optical drives MOD . It works in conjunction with the ML6012 Read Channel Front-end
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ML6013
300mW
32-pin
20MHz)
20MHz
20-pin
300mW,
15Ki2
vc03
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l6012
Abstract: Linear-11
Text: June 1996 PR ELIM IN A R Y fllL M icro Linear ^ ML6013 3.5" R/W MOD Read Channel Back-end Processor GEN ERAL D ESCRIPTION FEATURES The ML601 3 is a Read Channel Back-end processor for 3.5" Rewritable M agneto-Optical drives M O D . It w orks in conjunction with the M L60 1 2 Read Channel Front-end
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ML6013
ML601
l6012
Linear-11
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