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    CMOS STATIC RAM 1MX8 5V Search Results

    CMOS STATIC RAM 1MX8 5V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    CMOS STATIC RAM 1MX8 5V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1Mx8 bit Low Power CMOS Static RAM

    Abstract: No abstract text available
    Text: EDI8F81025C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION n 1Mx8 bit CMOS Static RAM The EDI8F81025C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 70 through 100ns •


    Original     		EDI8F81025C 100ns EDI8F81025LP) EDI8F81025C 512Kx8 EDI8F81025C70B6C EDI8F81025C85B6C 1Mx8 bit Low Power CMOS Static RAM PDF

    cmos static ram 1mx8 5v

    Abstract: 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C
    Text: White Electronic Designs EDI8F81026C 1Mx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION The EDI8F81026C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. 1Mx8 bit CMOS Static RAM • Access Times 20 through 35ns


    Original     		EDI8F81026C EDI8F81026C 512Kx8 cmos static ram 1mx8 5v 1Mx8 bit Low Power CMOS Static RAM 1m x 8 sram EDI8F81026C20M6C EDI8F81026C20M6I EDI8F81026C35M6C EDI8F81026C85M6C PDF

    EDI8F81024C

    Abstract: EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM
    Text: EDI8F81024C 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION n 1024Kx8 bit CMOS Static The EDI8F81024C is a 8Mb CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. n Random Access Memory • Access Times 70 thru 100ns


    Original     		EDI8F81024C 1024Kx8 EDI8F81024C 128Kx8 100ns EDI8F81024LP) EDI8F81024C70BSC EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C70BSI EDI8F81024C85BSC EDI8F81024LP100BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1Mx8 bit Low Power CMOS Static RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81027C White Electronic Designs 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION n 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns


    Original     		100ns EDI8F81027LP EDI8F81027C EDI8F81027C 512Kx8 EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C PDF

    cmos static ram 1mx8 5v

    Abstract: cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C
    Text: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION • 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns • Data Retention Function (EDI8F81027LP )


    Original     		EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C cmos static ram 1mx8 5v cd 5151 EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C PDF

    EDI8F81027C

    Abstract: EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM
    Text: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION n 1 Mx8 bit CMOS Static RAM The EDI8F81027C is an 8Mb CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. • Access Times 55 through 100ns • Data Retention Function (EDI8F81027LP )


    Original     		EDI8F81027C EDI8F81027C 512Kx8 100ns EDI8F81027LP EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C100B6C EDI8F81027C55B6C EDI8F81027C70B6C EDI8F81027C85B6C EDI8F81027LP55B6C EDI8F81027LP70B6C EDI8F81027LP85B6C 1Mx8 bit Low Power CMOS Static RAM PDF

    1024Kx8

    Abstract: No abstract text available
    Text: EDI8F81024C White Electronic 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION „ 1024Kx8 bit CMOS Static „ Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks


    Original     		1024Kx8 100ns EDI8F81024LP) EDI8F81024C EDI8F81024C 128Kx8 81024C70BSC EDI8F81024C85BSC PDF

    cmos static ram 1mx8 5v

    Abstract: EDI8F81024C EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C85BSC EDI8F81024LP70BSC EDI8F81024LP85BSC 1024Kx8
    Text: White Electronic Designs EDI8F81024C 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION 1024Kx8 bit CMOS Static Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks


    Original     		EDI8F81024C 1024Kx8 100ns EDI8F81024LP) EDI8F81024C 128Kx8 EDI8F81024LP70BSC EDI8F81024C85BSC cmos static ram 1mx8 5v EDI8F81024C100BSC EDI8F81024C70BSC EDI8F81024C85BSC EDI8F81024LP70BSC EDI8F81024LP85BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81024C White Electronic Designs 1Mx8 Static RAM CMOS, Module FEATURES DESCRIPTION n 1024Kx8 bit CMOS Static n Random Access Memory • • • • Access Times 70 thru 100ns Data Retention Function EDI8F81024LP TTL Compatible Inputs and Outputs Fully Static, No Clocks


    Original     		1024Kx8 100ns EDI8F81024LP) EDI8F81024C EDI8F81024C 128Kx8 singlF81024C70BSC EDI8F81024C85BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81027C 1Mx8 CMOS SRAM MONOLITHIC FEATURES DESCRIPTION • 1 Meg x 8 bit CMOS Static The EDI8F81027C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. ■ Random Access Memory • Access Times 55 thru 100ns


    Original     		EDI8F81027C 100ns EDI8F81027LP EDI8F81027C 512Kx8 EDI8F81027LP) EDI8F81027C55B6C EDI8F81027C70B6C PDF

    cmos static ram 1mx8 5v

    Abstract: No abstract text available
    Text: 1Mx8, 55 - 150ns, DIP 30A143-00 C 8 Megabit CMOS SRAM DPS1MS8MP DESCRIPTION: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on


    Original     		150ns, 30A143-00 600-mil-wide, 32-pin cmos static ram 1mx8 5v PDF

    Untitled

    Abstract: No abstract text available
    Text: MS81OOORKX-70/85/10/20 Issue 1.0: June 1989 M S81000RKX 1Mx8 CM0S SRAMModule ADVANCE PRODUCT INFORMATION 1,048,576 x 8 CMOS High Speed Static RAM Pin Definition Features Vcc A0 A1 A2 A3 DO D1 A4 A5 A6 A7 AÔ A13 D2 CS A15 A16 A17 A9 GND OE A14 D3 D4 D5 WE


    OCR Scan     		MS81OOORKX-70/85/10/20 S81000RKX 110mW MS81000R PDF

    FBGA48

    Abstract: 1mx8 STK14EE8-T STK14EE8-BF45
    Text: STK14EE8 1Mx8 AutoStore nvSRAM Preliminary FEATURES DESCRIPTION • 25, 45 ns Read Access and R/W Cycle Time The Simtek STK14EE8 is an 8MB fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


    Original     		STK14EE8 STK14EE8 ML0068 FBGA48 1mx8 STK14EE8-T STK14EE8-BF45 PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 8 Me8abit CMOSSRAM M I C R O S Y S T E M S D P S 1M S 8 M P PRELIM IN A RY DESCRIPTIO N: The DPS1MS8MP is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512Kx8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface


    OCR Scan     		512Kx8 600-mil-wide, 32-pin A0-A17 30A143-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit CMOS SRAM M I C R O S Y S T E MS DPS1MS8MP DESCRIPTION: The D PS1M S8M P is a 1Meg x 6 high-density, low-power static RAM module comprised of two 512K x 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on


    OCR Scan     		600-mil-wide, 32-pin 30A143-00 PDF

    cmos static ram 1mx8 5v

    Abstract: No abstract text available
    Text: DENSE-PAC 8 Megabit CMOS SRAM M IC R O S Y S T EM S DPS1MS8MP PRELIMINARY DESCRIPTION: The DPS1MS8MP is a IM eg x 8 high-density, low-power static RAM module comprised of two 5 1 2K x 8 m o no lithic SR A M 's, an advanced high-speed C M O S decoder and decoupling


    OCR Scan     		600-mil-wide, 32-pin A0-A17 30A14 cmos static ram 1mx8 5v PDF

    1431 T

    Abstract: No abstract text available
    Text: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on


    OCR Scan     		600-mil-wide 32-pin 30A143-00 27Sims 1431 T PDF

    1Mx8 bit Low Power CMOS Static RAM

    Abstract: AN 7470 cmos static ram 1mx8 5v EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
    Text: EDI8F81026C 1Megx8 SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging


    Original     		EDI8F81026C EDI8F81026C 512Kx8 EDI8F81026C25M6C EDI8F81026C25M6I. 01581USA 1Mx8 bit Low Power CMOS Static RAM AN 7470 cmos static ram 1mx8 5v EDI8F81026C20M6C EDI8F81026C25M6I EDI8F81026C35M6C PDF

    Untitled

    Abstract: No abstract text available
    Text: WED8F88092C White Electronic Designs 8MBX8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION • 8Mx8 bit CMOS Static ■ Random Access Memory ■ ■ Access Times 70 thru 100ns ■ Data Retention Function WED8F88092LP ■ TTL Compatible Inputs and Outputs ■


    Original     		WED8F88092C 100ns WED8F88092LP WED8F88092C WED8F88092LP) WED8F88092C70BSC WED8F88092C85BSC WED8F88092C100BSC PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F81026C m lUegxS SRAM Module ELECIROMC DC9SN&NC. 1Megabitx 8 StaticRAM CMOS, Module with RevolutionaryPinout F e a tu re s 1 Meg x 8 bit CM OS Static The EDI8F81026C is an 8 Megabit CM OS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered


    OCR Scan     		EDI8F81026C EDI8F81026C 512Kx8 EDI8F81035M6C EDI8F81026C25M6C EEM8F81026C2SM6I. 36PinDuaHhtne 4WECOf74TO PDF

    TLV5590

    Abstract: TLV5591 x2 texas instruments modem usr TLC8044 TMS320FLEX F240 MCK240 TMS320 TC236 sprb118
    Text: 8 ▼ INTEGRATION SEPTEMBER 1997 TRADE SHOWS USB Developers Conference ▼ Sept. 8-9 ▼ Fairmont Hotel ▼ Philadelphia, Penn. Texas Instruments will promote and display its broad range of universal serial bus USB products, including hubs, power management devices and transient suppressors. The conference will be divided into three


    Original     		SSFN018 com/sc/9709 SCG40 TLV5590 TLV5591 x2 texas instruments modem usr TLC8044 TMS320FLEX F240 MCK240 TMS320 TC236 sprb118 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1M x 8 SRAM MODULE SYS81000FK - 020/025/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 001 858 674 2233, Fax No: (001) 858 674 2230 Issue 3.0 : February 2000 Description Features The SYS81000FK is a plastic 8Mbit Static RAM Module housed in a JEDEC standard 36 pin Dual


    Original     		SYS81000FK 165mW 512Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1Mx8, 20 - 45ns, STACK/DIP 30A129-12 B 8 Megabit High Speed CMOS SRAM DPS1MX8MKN3 DESCRIPTION: The DPS1MX8MKN3 High Speed SRAM ‘’STACK’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired


    Original     		30A129-12 600-mil-wide, 32-pin PDF

    TLV5590

    Abstract: TLV5591 scld003a TLC8044 ScansUX7 flatbed scanner controller MOSFET ACER F240 MCK240 TMS320
    Text: ^ In T e x a s s t r u m e n t s < Previous Menu NORTH A M E R IC A N E D ITIO N V O L. 14 ▼ NO . 5 ▼ SEPTEM BER 1 9 9 7 A N U P D A T E ON T E X A S IN S T R U M E N T S S E M IC O N D U C TO R S N ew F LE X d e co d e rs su p p o rt roam ing, n u m e ric-o n ly d e sig n s


    OCR Scan     		TMS320FLEX TLV5593 TLV5594 TLV5591 SLVS160) TMS320C24X TLC8044 SLAS128/158) TLV5590 scld003a ScansUX7 flatbed scanner controller MOSFET ACER F240 MCK240 TMS320 PDF