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    CMOS PROCESS FAMILY Search Results

    CMOS PROCESS FAMILY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    CMOS PROCESS FAMILY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    XH035

    Abstract: CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area
    Text: 0.35 µm CMOS Process Family XH035 RF CMOS Modular mixed signal 0.35 µm CMOS process with passive Main Process Flow components available for mixed-signal/RF analog applications p-/p+ epi-substrate Independent retrograde n- and p-well Spiral top thick metal inductor


    Original     		XH035 CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area PDF

    0.6 um cmos process

    Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode
    Text: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP D23bSfl 7TL4142 0G23bSc PDF

    CMOS Process Family

    Abstract: polysilicon XA035 poly silicon resistor polysilicon resistor
    Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XA035 High Temprature combining HV and NVM modular CMOS Technology Modular 0.35 µm High Temperature CMOS process with operating temperature up to 175 °C. Module Overview CORE CORE The XA035 process is ideally suited for high-precision


    Original     		XA035 XA035 16Kbit CMOS Process Family polysilicon poly silicon resistor polysilicon resistor PDF

    ARM SRAM compiler

    Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
    Text: 0.25 µm CMOS Process Family FC025 0.25 µm CMOS process for 2.5V logic and mixed-signal applications Main Process Features with 3.3V or 5V I/O Single Poly and up to 5 Metal Layers FC025 Process section Pad Well Architecture: Retrograde Twin Well Nitride Pad


    Original     		FC025 FC025 ARM SRAM compiler poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library PDF

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L PDF

    KM62256CLP-7

    Abstract: No abstract text available
    Text: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family


    OCR Scan     		KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL- KM62256C KM62256CLP-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8


    OCR Scan     		KM681000B 128Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.


    OCR Scan     		KM681000C 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000C KM681000CLT-5L 32-TSOP KM661000CLRI-7L PDF

    micron resistor TCR

    Abstract: CMOS Process Family micron resistor 1.2 Micron CMOS Process Family
    Text: 5 Micron CMOS Process Family  June 1995 Process Parameters Features • Double Poly / Double Metal • 10 µm Poly and Metal Pitch • Low TCR Resistor Module Description The Mitel 5µm process is a double poly/double metal CMOS process with an operating voltage range from


    Original     		50x50 micron resistor TCR CMOS Process Family micron resistor 1.2 Micron CMOS Process Family PDF

    KM68V4000AL-L

    Abstract: KM68U4000A lm68
    Text: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family


    OCR Scan     		KM68V4000A, KM68U4000A 512Kx8 KM68V400QA 32-SOP-52S, 32-TSOP2-4 KM68V4000AL KM68V4000AL-L lm68 PDF

    cmos transistor 0.35 um

    Abstract: XH035 xh03 CMOS Process Family nmos transistor 0.35 um analog hv 102 Ultrasonic Piezoelectric poly silicon resistor inkjet module power mos transistor selection
    Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XH035 Analog, RF and 100V High Voltage Options with Non Volatile Memory Modular 0.35 µm CMOS process with 4 different process cores for analog/mixed-signal and high voltage applications. Modules Overview


    Original     		XH035 cmos transistor 0.35 um XH035 xh03 CMOS Process Family nmos transistor 0.35 um analog hv 102 Ultrasonic Piezoelectric poly silicon resistor inkjet module power mos transistor selection PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V


    OCR Scan     		KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000AL KM68V4000AL-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%


    OCR Scan     		KM68512A 64Kx8 32-SOP, 32-TSOP DG23b27 PDF

    km62256clg-7

    Abstract: 62256CL-L
    Text: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CM O S process technology. The family


    OCR Scan     		KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP KM62256CL KM62256CL-L km62256clg-7 62256CL-L PDF

    CMOS Process Family

    Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
    Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single


    Original     		XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library PDF

    SEC KM62256CLP-7

    Abstract: KM622S6C KM62256CLP-7
    Text: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 • Power Supply Voltage : Single 5V +/-10% advanced CMOS process technology. The family


    OCR Scan     		KM62256C 32Kx8 28-DIP, 28-SOP, 28-TSOP 7Tb4142 0G53bl7 SEC KM62256CLP-7 KM622S6C KM62256CLP-7 PDF

    SRAM sheet samsung

    Abstract: 44TSOP KM6 II KM68U4000A 414KM 44-TSOP
    Text: K M6 1 6 V 4 0 0 0 A CMOS SRAM ELECTRONICS 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM616V4000A and KM616U4000A family are • Organization: 256Kx16 fabricated by SAMSUNG'S advanced CMOS process


    OCR Scan     		256Kx16 256Kx16 KM68V4000A KM68U4000A 44-TSOP KM616V4000A KM616U4000A KM616V4000A 0D312Sb SRAM sheet samsung 44TSOP KM6 II 414KM PDF

    0.6 um cmos process

    Abstract: CMOS Process Family xc06 transistor parameters DSASW0041938 XC-06 "X-Fab"
    Text: 0.6 µm CMOS Process Family XC06 With Embedded EEPROM, Flash and High Voltage Options Modular 0.6 µm CMOS process with the possibility to add a Main Process Features wide variety of medium and high voltage MOS transistors, passive elements and embedded EEPROM and Flash


    Original     		PDF

    0.18 um CMOS Process

    Abstract: 0.18 um CMOS sonos CMOS Process Family NMOS transistor 0.18 um CMOS XH018 poly silicon resistor LDMOS digital 330 resistor DSASW0041939
    Text: 0.18 µm CMOS Process Family XH018 HV CMOS Modular 0.18 µm CMOS process with integrated HV and NVM available for advanced mixed-signal applications Target Applications Module Overview AC Motor 100 0.1 0.01 XH018 Digital 1 XH018 Versatile Application Space


    Original     		XH018 XH018 0.18 um CMOS Process 0.18 um CMOS sonos CMOS Process Family NMOS transistor 0.18 um CMOS poly silicon resistor LDMOS digital 330 resistor DSASW0041939 PDF

    0.18 um CMOS

    Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz
    Text: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module


    Original     		XC018 IMD35 0.18 um CMOS CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz PDF

    KM68U1000BLG8L

    Abstract: KM68V1000BLG7L
    Text: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.


    OCR Scan     		KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSO 68V1000B 68U1000B KM68U1000BLG8L KM68V1000BLG7L PDF

    XP018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single


    Original     		XP018 XP018 18-micron PDF

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" PDF