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    CMNDM8001 Search Results

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    CMNDM8001 Price and Stock

    Central Semiconductor Corp CMNDM8001 TR

    P-Channel Enhancement Mode MOSFET 20V 100mA 5-Pin SOT-953 T/R - Tape and Reel (Alt: CMNDM8001 TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMNDM8001 TR Reel 8,000
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    Central Semiconductor Corp CMNDM8001 TR PBFREE

    Transistor MOSFET P-CH 20V 100mA 5-Pin SOT-953 T/R - Tape and Reel (Alt: CMNDM8001 TR PBFRE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CMNDM8001 TR PBFREE Reel 8,000
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    Mouser Electronics CMNDM8001 TR PBFREE
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    CMNDM8001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 100mA 22-August

    P-channel power mosfet 30V

    Abstract: mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 100mA 24-September OT-953 P-channel power mosfet 30V mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS

    Untitled

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 CMNDM8001 OT-953 OT-953 22-August

    Untitled

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 OT-953 100mA 25-January

    marking code BC

    Abstract: No abstract text available
    Text: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CMNDM8001 OT-953 35GSSF, 100mA marking code BC

    CEDM8001VL

    Abstract: No abstract text available
    Text: CEDM8001VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001VL is a P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed


    Original     		PDF CEDM8001VL CEDM8001VL OT-883VL CEDM7001VL 100mW 11-September

    PB CEDM7001VL 8001VL

    Abstract: CEDM7001VL 8001VL
    Text: Product Brief CEDM7001VL N-Channel CEDM8001VL (P-Channel) SOT-883VL 20V, 100mA, MOSFETs in the very low profile SOT-883VL package Top View Bottom View Typical Electrical Characteristics Central Semiconductor’s CEDM7001VL (N-Channel) and CEDM8001VL (P-Channel) are Enhancement-mode MOSFETs


    Original     		PDF CEDM7001VL CEDM8001VL OT-883VL 100mA, OT-883VL 21x9x9 PB CEDM7001VL 8001VL CEDM7001VL 8001VL

    Untitled

    Abstract: No abstract text available
    Text: PROCESS CP761R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94 MILS Source Bonding Pad Area 3.94 x 7.08 MILS Top Side Metalization Al-Si - 35,000Å


    Original     		PDF CP761R CEDM8001 CMNDM8001