Q62702-L96
Abstract: No abstract text available
Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
Q62702-L96
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gaas fet marking a
Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm
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Q62702-L96
gaas fet marking a
cly 2 GaAs FET
marking code 5
Q62702-L96
SIEMENS MAG 6000
siemens gaas fet
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CLY10
Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.
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Q62702-L94
CLY10
CLY10
gaas fet marking a
CLY 10
04917
07096
FET marking code
marking code 5
small signal GaAs FET
Q62702-L94
siemens gaas fet
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siemens 30 090
Abstract: Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606
Text: CLY 15 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm
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Q62702-L99
siemens 30 090
Siemens A 1458
gaas fet marking a
Q62702-L99
440 485
hl 1606
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gaas fet marking a
Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
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Q62702-L90
615ms
gaas fet marking a
siemens gaas fet
FET marking code
Q62702-L90
cly5
cly 10
pd21
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Q62702-L94
Abstract: No abstract text available
Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.
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Q62702-L94
Q62702-L94
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Q62702-L90
Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,
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Q62702-L90
Q62702-L90
marking K gaas fet
gaas fet marking a
gaas fet marking C
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cly 10
Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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Q62702-L94
OT-223
P-SOT223-4-2
GPS05560
cly 10
Q62702-L94
CLY 70
GPS05560
SMD MARKING CODE TRANSISTOR 501
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transistor smd code marking 561
Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
sot-223 MARKING CODE 718
smd marking 271 Sot
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WL431003667
Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L94
P-SOT223-4-2
GPS05560
WL431003667
TRANSISTOR SMD MARKING CODE 703
TRANSISTOR SMD MARKING CODE 723
smd transistor marking p1
TRANSISTOR SMD MARKING CODE 512
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TRANSISTOR SMD MARKING CODE 703
Abstract: TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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Q62702-L94
OT-223
P-SOT223-4-2
GPS05560
TRANSISTOR SMD MARKING CODE 703
TRANSISTOR SMD MARKING CODE 723
GPS05560
Q62702-L94
smd transistor marking 329
book
SMD MARKING CODE TRANSISTOR 501
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transistor smd code marking 561
Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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Q62702-L99
OT-223
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
GPS05560
Q62702-L99
s-parameter s11 s12 s21
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Q62702-L96
Abstract: No abstract text available
Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,
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Q62702-L96
GPW05794
Q62702-L96
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CLY 2
Abstract: Q62702-L96
Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,
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Q62702-L96
GPW05794
CLY 2
Q62702-L96
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transistor smd 661 752
Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
transistor smd 661 752
GPS05560
Q62702-L90
high power FET transistor s-parameters
TRANSISTOR SMD MARKING CODE p1
smd transistor code 621
marking code 933 SMD Transistor
SMD transistor marking P
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transistor smd 661 752
Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
transistor smd 661 752
CLY 30
marking code 933 SMD Transistor
TRANSISTOR SMD MARKING CODE p1
GPS05560
Q62702-L90
CLY 5
809 code Marking SOT-223
marking code s21 SMD Transistor
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transistor smd code marking 561
Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
smd marking 271 Sot
GPS05560
Q62702-L99
GAAS FET AMPLIFIER 3400 Mhz
TRANSISTOR SMD MARKING CODE 352
smd transistor 718
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marking code 933 SMD Transistor
Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L90
P-SOT223-4-2
EHT08956
GPS05560
marking code 933 SMD Transistor
transistor smd 661 752
CLY5
high power FET transistor s-parameters
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2520P
Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant
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40-T1
70-T1
70B-HP
HPAC140
2520P
schottky diode 43t
BFY193
5613
CFY 19
CFY 18
micro-x 420
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siemens gaas fet
Abstract: TMS 1600 marking S221
Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
siemens gaas fet
TMS 1600
marking S221
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t z 1037 519
Abstract: No abstract text available
Text: Infineon !«£hnc!03iä& GaAs FET CLY 15 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Operating voltage range: 2.7 to 6 V • • ^ out Vq = 3 V, / = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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Q62702-L99
P-SOT223-4-2
CLY15
t z 1037 519
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Untitled
Abstract: No abstract text available
Text: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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Q62702-L96
EHT08944
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Untitled
Abstract: No abstract text available
Text: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,
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Q62702-L90
P-SOT223-4-2
EHT08952
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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