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    CLY 2 GAAS FET Search Results

    CLY 2 GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC092A-B Analog Devices LTC1551: -4.1V OUTPUT GaAs FET Visit Analog Devices Buy
    DC092A-A Analog Devices LTC1550LCS8 - -4.1V OUTPUT GaA Visit Analog Devices Buy
    ADMV1009AEZ-R7 Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy
    ADMV1009AEZ Analog Devices 13/15GHz GaAs UpConverter Visit Analog Devices Buy
    ADMV1010AEZ-R7 Analog Devices 13/15GHz GaAs D/C Visit Analog Devices Buy

    CLY 2 GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-L96

    Abstract: No abstract text available
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 Q62702-L96

    gaas fet marking a

    Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm


    Original     		PDF Q62702-L96 gaas fet marking a cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet

    Q62702-L96

    Abstract: No abstract text available
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 Q62702-L96

    CLY 2

    Abstract: Q62702-L96
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 CLY 2 Q62702-L96

    RN-134 RN-134

    Abstract: No abstract text available
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 RN-134 RN-134

    marking code 933 SMD Transistor

    Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 marking code 933 SMD Transistor transistor smd 661 752 CLY5 high power FET transistor s-parameters

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P

    transistor smd code marking 561

    Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L99 OT-223 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 GPS05560 Q62702-L99 s-parameter s11 s12 s21

    transistor smd code marking 561

    Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 sot-223 MARKING CODE 718 smd marking 271 Sot

    gaas fet marking a

    Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm


    Original     		PDF Q62702-L90 615ms gaas fet marking a siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 cly 10 Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501

    Q62702-L94

    Abstract: No abstract text available
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 Q62702-L94

    Q62702-L90

    Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L90 Q62702-L90 marking K gaas fet gaas fet marking a gaas fet marking C

    CLY10

    Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 CLY10 CLY10 gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet

    cf sot-363

    Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
    Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-363 SCT-598 cf sot-363 GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18

    GaAs pHEMT LOW SOT-343

    Abstract: CLY 2
    Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF OT-363 VQFN-16-2 SCT-598 GaAs pHEMT LOW SOT-343 CLY 2

    MMIC Amplifier Micro-X marking 420

    Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices


    Original     		PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 siemens gaas fet TMS 1600 marking S221

    Untitled

    Abstract: No abstract text available
    Text: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 EHT08944

    siemens gaas fet

    Abstract: gaas fet marking J
    Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		PDF S0S163 Q62702-L90 615ms i77mS- 417ps siemens gaas fet gaas fet marking J

    Untitled

    Abstract: No abstract text available
    Text: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L90 P-SOT223-4-2 EHT08952

    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


    OCR Scan     		PDF

    Siemens A 1458

    Abstract: FET marking code 365
    Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,


    OCR Scan     		PDF CLY15 Q62702-L99 Siemens A 1458 FET marking code 365