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    CLY 10 Search Results

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    LEMO connectors FGG.3B.310.CLYD10Z

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    CLY 10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CLY10 Infineon Technologies GaAs FET Original PDF
    CLY10 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    CLY10 Siemens GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) Original PDF
    CLY 10 TriQuint Semiconductor RF Amplifier, General purpose amplifier, Single channel, Chip, 6000 MHz, SOT-223, 4-Pin Original PDF
    CLY10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    CLY10 Siemens Transistors Scan PDF

    CLY 10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q62702-L96

    Abstract: No abstract text available
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % 5 6 3 2 ESD: Type CLY 2 Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 Q62702-L96

    CLY10

    Abstract: gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 CLY10 CLY10 gaas fet marking a CLY 10 04917 07096 FET marking code marking code 5 small signal GaAs FET Q62702-L94 siemens gaas fet

    Q62702-L94

    Abstract: No abstract text available
    Text: CLY 10 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ.


    Original     		PDF Q62702-L94 Q62702-L94

    gaas fet marking a

    Abstract: cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet
    Text: CLY 2 GaAs FET Datasheet 4 * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm


    Original     		PDF Q62702-L96 gaas fet marking a cly 2 GaAs FET marking code 5 Q62702-L96 SIEMENS MAG 6000 siemens gaas fet

    siemens 30 090

    Abstract: Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606
    Text: CLY 15 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm


    Original     		PDF Q62702-L99 siemens 30 090 Siemens A 1458 gaas fet marking a Q62702-L99 440 485 hl 1606

    gaas fet marking a

    Abstract: siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm


    Original     		PDF Q62702-L90 615ms gaas fet marking a siemens gaas fet FET marking code Q62702-L90 cly5 cly 10 pd21

    cly 10

    Abstract: Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 cly 10 Q62702-L94 CLY 70 GPS05560 SMD MARKING CODE TRANSISTOR 501

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512

    TRANSISTOR SMD MARKING CODE 703

    Abstract: TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L94 OT-223 P-SOT223-4-2 GPS05560 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 GPS05560 Q62702-L94 smd transistor marking 329 book SMD MARKING CODE TRANSISTOR 501

    Q62702-L90

    Abstract: marking K gaas fet gaas fet marking a gaas fet marking C
    Text: CLY 5 GaAs FET Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L90 Q62702-L90 marking K gaas fet gaas fet marking a gaas fet marking C

    transistor smd code marking 561

    Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 sot-223 MARKING CODE 718 smd marking 271 Sot

    transistor smd code marking 561

    Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L99 OT-223 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 GPS05560 Q62702-L99 s-parameter s11 s12 s21

    Q62702-L96

    Abstract: No abstract text available
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 Q62702-L96

    CLY 2

    Abstract: Q62702-L96
    Text: GaAs FET CLY 2 Data Sheet • • • • • Power amplifier for mobile phones For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 23.5 dBm High efficiency better 55% MW-6 ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L96 GPW05794 CLY 2 Q62702-L96

    transistor smd 661 752

    Abstract: GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 GPS05560 Q62702-L90 high power FET transistor s-parameters TRANSISTOR SMD MARKING CODE p1 smd transistor code 621 marking code 933 SMD Transistor SMD transistor marking P

    transistor smd 661 752

    Abstract: CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 transistor smd 661 752 CLY 30 marking code 933 SMD Transistor TRANSISTOR SMD MARKING CODE p1 GPS05560 Q62702-L90 CLY 5 809 code Marking SOT-223 marking code s21 SMD Transistor

    transistor smd code marking 561

    Abstract: smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		PDF OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 smd marking 271 Sot GPS05560 Q62702-L99 GAAS FET AMPLIFIER 3400 Mhz TRANSISTOR SMD MARKING CODE 352 smd transistor 718

    marking code 933 SMD Transistor

    Abstract: transistor smd 661 752 CLY5 high power FET transistor s-parameters
    Text: GaAs FET CLY 5 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 26.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L90 P-SOT223-4-2 EHT08956 GPS05560 marking code 933 SMD Transistor transistor smd 661 752 CLY5 high power FET transistor s-parameters

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


    Original     		PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 siemens gaas fet TMS 1600 marking S221

    t z 1037 519

    Abstract: No abstract text available
    Text: Infineon !«£hnc!03iä& GaAs FET CLY 15 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Operating voltage range: 2.7 to 6 V • • ^ out Vq = 3 V, / = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L99 P-SOT223-4-2 CLY15 t z 1037 519

    Untitled

    Abstract: No abstract text available
    Text: In fineon »«ihn cicjiss GaAs FET CLY 2 Data Sheet • Power amplifier for mobile phones • • • • For frequencies up to 3 GHz Operating voltage range: 2 to 6 V POUT at VD= 3 V , / = 1.8 GHz typ. 23.5 dBm High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L96 EHT08944

    Untitled

    Abstract: No abstract text available
    Text: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-L90 P-SOT223-4-2 EHT08952

    siemens gaas fet

    Abstract: gaas fet marking J
    Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		PDF S0S163 Q62702-L90 615ms i77mS- 417ps siemens gaas fet gaas fet marking J