transistor cms 6BW
Abstract: g2v2 relay 4 digit 7 segment calculator lcd display pin BIT 31936 g2v2 transistor 5bw A7102A 6BW 87 automatic dialer sd 7402
Text: DEFINITY Enterprise Communications Server and System 75 and System 85 Terminals and Adjuncts Reference 555-015-201 Comcode 108603994 Issue 11 December 1999 Copyright 1999, Lucent Technologies All Rights Reserved Printed in USA Notice Every effort was made to ensure that the information in this book was
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8510T
8520T
8520T
transistor cms 6BW
g2v2 relay
4 digit 7 segment calculator lcd display pin
BIT 31936
g2v2
transistor 5bw
A7102A
6BW 87
automatic dialer
sd 7402
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Untitled
Abstract: No abstract text available
Text: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches
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Am2817A
10-year
Am9864
6891A)
384-bit
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)
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Am27S35/Am27S37
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current
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32-Pin
28F010
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PLL IC 566
Abstract: application of IC 566 function generator ne 565 pll Resistor Fuse 4.91 pll 565 application PLL 567 am2971
Text: Am2971 Programmable Event Generator PEG Am2971 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Twelve programmable, registered output waveforms Programmable event intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im proved timing accuracy
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Am2971
Am2971
KS000010
WF022521
WF022530
PF001081
PLL IC 566
application of IC 566 function generator
ne 565 pll
Resistor Fuse 4.91
pll 565 application
PLL 567
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dk qs
Abstract: CLTO20
Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,
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Am27S31
512-words
MIL-STD-883,
dk qs
CLTO20
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27S181
Abstract: Am27S181/27S181
Text: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction
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192-Bit
1024x8)
Am27S101
Am27S181/27S181
27S281/27S281A
TC003452
Am27S181
/27S181A
Am27S281/27S281
27S181
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28F020A
Abstract: 28F020T
Text: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current
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Am28F020A
32-Pin
28F020A
28F020A
28F020T
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AMD 28F512
Abstract: No abstract text available
Text: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current
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OCR Scan
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Am28F512
32-pin
28F512
AMD 28F512
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PDF
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TS21C
Abstract: am2971
Text: Am 2971 Programmable Event Generator PEG PRELIM INARY Distinctive Characteristics • • • • Twelve programmable, registered output waveforms Programmable event Intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im proved timing accuracy
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Am2971
WF022530
PF001081
IC000881
TS21C
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am2664be
Abstract: rvb ah
Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write
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Am2864BE
32-byte
10-year
Am2664BE
536-bit
WF025172
rvb ah
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PDF
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Amd 5000 pin diagram
Abstract: No abstract text available
Text: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention
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Am99C88/Am99CL88
Am99C88
Am99CL88
28-pin
MIL-STD-883,
Amd 5000 pin diagram
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PDF
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VM7204
Abstract: AM7204A PDW028
Text: a Am7204A Advanced Micro Devices High Density First-In First-Out FIFO 4096 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ ■ RAM based FIFO 4096 x 9 organization Cycle times of 25/35/45/65 ns for standard products Cycle times of 40/65 ns for APL products
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Am7204A
14430C-20
VM7204
PDW028
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AM27S35
Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Text: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard
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Am27S35/S35A/Am27S37/S37A
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
WF021580
AM27S35A
CD3024
PD3024
1024x8 PROM
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PDF
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M7202A
Abstract: No abstract text available
Text: Am7202A Advanced Micro Devices High Density First-In First-Out FIFO 1024 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Status flags—full, half-full, empty Retransmit capability Expandable In both width and depth Increased noise immunity for xF—CMOS
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Am7202A
15491B-18
M7202A
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2817a
Abstract: MIL-STD-663
Text: Am2817 A 2048 x 8-B it E lectrically Erasable PROM • • 5-Volt-only operation Write-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication Self-timed write cycle with on-chip latches Minimum endurance of 10,000 write cycles per byte with
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OCR Scan
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Am2817A
10-year
Am9864
384-bit
MIL-STD-883,
2817a
MIL-STD-663
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PDF
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27S45
Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay
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OCR Scan
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27S45/27S45
/27S45S
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
Am27S45/27S45A/27S45SA
27S45
27S47A
AM27S45A
27S45A
AM27S47A
27S45SA
27s47
AM27S45SA
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27s31
Abstract: No abstract text available
Text: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S31
/27S31A
512x8)
Am27S31/27S31
Am27S31/27S31A
27s31
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PDF
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Untitled
Abstract: No abstract text available
Text: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.
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OCR Scan
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Am99C88/Am99CL88
Am99C88
Am99CL88
28-pin
MIL-STD-883,
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PDF
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AM27S45A
Abstract: AM27S45s
Text: Am27S45/Am27S47 Am27S45/Am27S47 16,384-Bit 2 0 4 8 x 8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies
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OCR Scan
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Am27S45/Am27S47
384-Bit
24-pin,
300-mil
Am27S45
Am27S47
MIL-STD-883,
AM27S45A
AM27S45s
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PDF
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27S43A
Abstract: CD 024 27S43 KS000010
Text: Am27S43/27S43A Advanced Micro Devices 32,768-Bit 4096x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time Voltage and temperature compensated providing ex tremely flat AC performance over military range Platinum-Silicide fuses guarantee high reliability, fast
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OCR Scan
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Am27S43/27S43A
768-Bit
4096x8)
Am27S43
BD006310
KS000010
27S43A
CD 024
27S43
KS000010
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PDF
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AM99C328-70
Abstract: No abstract text available
Text: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum
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Am99C328
28-pin,
32-pin
---------------------------------WF021812
07430B
CLR032
AM99C328-70
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PDF
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AM27S45
Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay
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OCR Scan
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Am27S45/27S45A/27S45SA
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
27s47
AM27S45A
am27s47a
27S45
27S47A
27S45A
AM27S45s
Am27S47/27S47A
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PDF
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Untitled
Abstract: No abstract text available
Text: -» A /* i. « Advanced Micro High Density First-In First-Out FIFO 4096x9-Bit CMOS Memory Devices a Am7204A DISTINCTIVE CHARACTERISTICS • ■ RAM based FIFO 4096x9 organization Low power consumption Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for
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OCR Scan
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4096x9-Bit
Am7204A
4096x9
4430-016A
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PDF
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