Untitled
Abstract: No abstract text available
Text: CLE335P Clairex Technologies, Inc. Super-efficient Aluminum Gallium Arsenide IRED Plastic collimating lens June, 2003 ALL DIMENSIONS ARE IN INCHES MILLIMETERS absolute maximum ratings (TA = 25°C unless otherwise stated) features • • • • •
|
Original
|
PDF
|
CLE335P
850nm
10MHz
CLE335P
100mA,
100mA
128cm)
200ps.
|
Untitled
Abstract: No abstract text available
Text: Clairex CLE335 Super-efficient Aluminum Gallium Arsenide IRED Technologies, Inc. March, 2001 0.165 4.19 0.145 (3.68) 0.156 (3.96) 0.136 (3.45) 0.100 (2.54) dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) CATHODE (connected to case) 0.190 (4.83) 0.176 (4.47)
|
Original
|
PDF
|
CLE335
845nm
CLE335
|
power diode 100mA
Abstract: CLE335P
Text: CLE335P Clairex Technologies, Inc. Super-efficient Aluminum Gallium Arsenide IRED Plastic collimating lens June, 2003 connected to case ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) absolute maximum ratings (TA = 25°C unless otherwise stated) features
|
Original
|
PDF
|
CLE335P
850nm
10MHz
CLE335P
100mA
128cm)
200ps.
power diode 100mA
|
Untitled
Abstract: No abstract text available
Text: CLE335, CLE330E, CLE330W 850nm Super Efficient AlGaAs IREDs Clairex Technologies, Inc. November, 2005 ] [ +.05 Ø.210+.002 -.001 Ø5.33-.03 Ø.100±0.005 [Ø2.54±.13] 1.00 [25.4] MIN .051±.010 [1.30±.25] CATHODE .025 [.064] MAX ANODE .183±.001 [4.65±.03]
|
Original
|
PDF
|
CLE335,
CLE330E,
CLE330W
850nm
CLE335
CLE330E
|
CLE335
Abstract: CLE330E CLE330W
Text: CLE335, CLE330E, CLE330W 850nm Super Efficient AlGaAs IREDs Clairex Technologies, Inc. November, 2005 [ ] +.05 Ø.210+.002 -.001 Ø5.33-.03 Ø.100±0.005 [Ø2.54±.13] 1.00 [25.4] MIN .051±.010 [1.30±.25] CATHODE .025 [.064] MAX ANODE .183±.001 [4.65±.03]
|
Original
|
PDF
|
CLE335,
CLE330E,
CLE330W
850nm
CLE335
CLE330E
CLE330E
CLE335
CLE330W
|
Aspheric Lens TO Can
Abstract: CLE335
Text: CLE335 Clairex Super-efficient Aluminum Gallium Arsenide IRED Technologies, Inc. March, 2001 0.156 3.96 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.100 (2.54) dia. 1.00 (25.4) min. 0.215 (5.46) 0.205 (5.21) CATHODE 0.190 (4.83) 0.176 (4.47) ANODE 0.025 (0.64) max.
|
Original
|
PDF
|
CLE335
850nm
10MHz
CLE335
100mA
100mA,
Aspheric Lens TO Can
|
Untitled
Abstract: No abstract text available
Text: CLE335P Super-efficient Aluminum Gallium Arsenide IRED Plastic collimating lens Clairex Technologies, Inc. June, 2003 ALL DIMENSIONS ARE IN INCHES MILLIMETERS fundamental characteristics (connected to case) CAUTION: Do not exceed the absolute maximum soldering
|
Original
|
PDF
|
CLE335P
|
CLD340
Abstract: CLE335 CLDX340
Text: CLD340 Clairex Technologies, Inc. High Temperature AlGaAs Photodiode January, 2002 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE 0.025 (0.64) max.
|
Original
|
PDF
|
CLD340
880nm
850nm
CLD340
CLE335
CLDX340
|
CLE335
Abstract: CLT335
Text: Clairex CLT335 Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64) max
|
Original
|
PDF
|
CLT335
850nm.
CLE335
CLT335
|
CLE335
Abstract: CLT335 double Silicon NPN Phototransistor phototransistor, 850nm
Text: Clairex CLT335 Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)
|
Original
|
PDF
|
CLT335
850nm.
CLE335
CLT335
double Silicon NPN Phototransistor
phototransistor, 850nm
|
Untitled
Abstract: No abstract text available
Text: CLT335 Clairex Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)
|
Original
|
PDF
|
CLT335
850nm.
|
uv phototransistor
Abstract: CLD240E CLD271 CLD240 LED NIGHT LAMP CIRCUIT CLL133 cll135 CLD340 CL9P5L CLL136
Text: Clairex OPTOELECTRONIC Technologies, Inc. PACKAGING & PRODUCTS 1301 East Plano Parkway Plano, Texas 75074-8524 PH: 972-265-4900 FAX: 972-265-4949 www.clairex.com CLAIREX TODAY Clairex Technologies, incorporated in Texas in 1994, has grown to become an internationally recognized leader in
|
Original
|
PDF
|
390nm
465nm
525nm
660nm
850nm
uv phototransistor
CLD240E
CLD271
CLD240
LED NIGHT LAMP CIRCUIT
CLL133
cll135
CLD340
CL9P5L
CLL136
|
Untitled
Abstract: No abstract text available
Text: CLD340 Clairex Technologies, Inc. High Temperature AlGaAs Photodiode January, 2002 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE 0.025 (0.64) max.
|
Original
|
PDF
|
CLD340
880nm
CLD340
910nm.
850nm.
|
Clairex
Abstract: Aspheric Lens convex lens CLE335 CLT335 phototransistor, 850nm source LED 850nm LED 850nm TO-18
Text: Clairex CLT335 Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) N/C BASE EMITTER 0.100 (2.54) dia 0.025 (0.64)
|
Original
|
PDF
|
CLT335
850nm.
Clairex
Aspheric Lens
convex lens
CLE335
CLT335
phototransistor, 850nm
source LED 850nm
LED 850nm TO-18
|
|
|
CLD340
Abstract: 910nm CLE335 CLDX340
Text: CLD340 Clairex Technologies, Inc. High Temperature AlGaAs Photodiode January, 2002 0.100 2.54 dia. 1.00 (25.4) min. 0.156 (3.96) 0.136 (3.45) 0.165 (4.19) 0.145 (3.68) 0.215 (5.46) 0.205 (5.21) ANODE 0.190 (4.83) 0.176 (4.47) CATHODE 0.025 (0.64) max.
|
Original
|
PDF
|
CLD340
880nm
CLD340
910nm.
850nm.
910nm
CLE335
CLDX340
|
Untitled
Abstract: No abstract text available
Text: CLE335 PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Clairex® Technologies, Incorporated December, 1997 features • • • • • • 150°C operating temperature exceptionally high power output 850 nm wavelength > 10M H z operation
|
OCR Scan
|
PDF
|
CLE335
100mA
100mA,
21427T1
|
la 1845
Abstract: CLE335 21427T1
Text: CLE335 PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Clairex Technologies, Incorporated December, 1997 features • • • • • • 150°C operating temperature exceptionally high power output 850 nm wavelength > 10MHz operation TO-46 hermetic package
|
OCR Scan
|
PDF
|
CLE335
10MHz
100mA
100mA,
la 1845
21427T1
|
Untitled
Abstract: No abstract text available
Text: Clairex Technologies, Incorporated ® CLT335 PRELIMINARY DATA NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 package transistor base is not bonded
|
OCR Scan
|
PDF
|
CLT335
850nm
250mW
100pA
850nm.
21427T?
|
