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    CLASS TD AMPLIFIER Search Results

    CLASS TD AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    ISL99201IRTDZ-TK Renesas Electronics Corporation Filterless High Efficiency 1.5W Class D Mono Amplifier Visit Renesas Electronics Corporation
    ISL99201IRTCZ-TK Renesas Electronics Corporation Filterless High Efficiency 1.5W Class D Mono Amplifier Visit Renesas Electronics Corporation
    ISL99201IRTAZ-TK Renesas Electronics Corporation Filterless High Efficiency 1.5W Class D Mono Amplifier Visit Renesas Electronics Corporation
    ISL99201IRTAZ-T Renesas Electronics Corporation Filterless High Efficiency 1.5W Class D Mono Amplifier Visit Renesas Electronics Corporation

    CLASS TD AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77596 Tx-Rx FEM for Quad-Band GSM / GPRS with Two Rx Switch Ports and Dual-Band TD-SCDMA Applications Description • Quad-band GSM and Dual-Band TD-SCDMA cellular handsets encompassing - Class 4 GSM850 / 900 - Class 1 DCS1800 / PCS1900


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    SKY77596 GSM850 DCS1800 PCS1900 GSM850/900, DCS1800/PCS1900 PDF

    SKY77595

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77595 Tx-Rx FEM for Quad-Band GSM / GPRS with Four Linear TRx Switch Ports and Dual-Band TD-SCDMA Applications Description • Quad-band GSM and Dual-Band TD-SCDMA cellular handsets encompassing - Class 4 GSM850 / 900 - Class 1 DCS1800 / PCS1900


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    SKY77595 GSM850 DCS1800 PCS1900 GSM850/900, PCS1900 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77592 Tx-Rx FEM for Quad-Band GSM / GPRS / EDGE with Six Linear TRx Switch Ports and Dual-Band TD-SCDMA Applications Description • Quad-band GSM/EDGE and DualBand TD-SCDMA cellular handsets encompassing - Class 4 GSM850 / 900 - Class 1 DCS1800 / PCS1900


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    SKY77592 GSM850 DCS1800 PCS1900 GSM850/900, DCS1800, PCS1900 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77594 Tx-Rx FEM for Quad-Band GSM / GPRS / EDGE with Two Rx Switch Ports and Dual-Band TD-SCDMA Applications Description • Quad-band GSM/EDGE and DualBand TD-SCDMA cellular handsets encompassing - Class 4 GSM850 / 900 - Class 1 DCS1800 / PCS1900


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    SKY77594 GSM850 DCS1800 PCS1900 GSM850/900, DCS1800/PCS1900 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77593 Tx-Rx FEM for Quad-Band GSM / GPRS / EDGE with Four Linear TRx Switch Ports and Dual-Band TD-SCDMA Applications Description • Quad-band GSM/EDGE and DualBand TD-SCDMA cellular handsets encompassing - Class 4 GSM850 / 900 - Class 1 DCS1800 / PCS1900


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    SKY77593 GSM850 DCS1800 PCS1900 GSM850/900, PCS1900 PDF

    SKY77573-31

    Abstract: No abstract text available
    Text: PRODUCT SUMMARY SKY77573-31 Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE and TD-SCDMA w/ 4-Band Antenna Switch Support Applications Description • Quad-band cellular handsets encompassing - Class 4 GSM850/900 - Class 1 DCS1800/PCS1900 - Class 12 GPRS


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    SKY77573-31 GSM850/900 DCS1800/PCS1900 GSM850/900, DCS1800, PCS1900 PDF

    j721

    Abstract: j435 MRF19030
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and


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    Gain990 MRF19030 MRF19030R3 MRF19030S MRF19030SR3 j721 j435 PDF

    PTB3J88-5638T-SC

    Abstract: GPON APD 1490nm GPON ONT block diagram gpon GPON ONU IEC825 GPON APD GPON block diagram
    Text: www.neophotonics.com VER A PTB3J88-5638T-SC/APC+ GPON ONU Bi-Directional Transceiver 1 Feature 1.1 Single Fiber Bi-Directional Transceiver DFB 1310nm laser diode as 1.244Gb/s transmitter APD 1490nm with TIA and 2.488Gb/s post amplifier receiver 1.2 Meets ITU-T G.984.2 Class B+


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    PTB3J88-5638T-SC/APC+ 1310nm 244Gb/s 1490nm 488Gb/s 244Gbps 2002/95/EC 244Gbps PTB3J88-5638T-SC GPON APD 1490nm GPON ONT block diagram gpon GPON ONU IEC825 GPON APD GPON block diagram PDF

    pcb 200W audio amplifier

    Abstract: IRFI4019 audio amplifier irfi4019hg IRFI4019HG irfi4019hg-117p digital audio mosfet class D audio power amplifier
    Text: PD - 96274 IRFI4019HG-117P DIGITAL AUDIO MOSFET Key Parameters Features Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications


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    IRFI4019HG-117P O-220 O-220AB pcb 200W audio amplifier IRFI4019 audio amplifier irfi4019hg IRFI4019HG irfi4019hg-117p digital audio mosfet class D audio power amplifier PDF

    12v class d amplifier 100W

    Abstract: No abstract text available
    Text: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been


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    O-247 ARF463AP1 ARF463BP1 100MHz ARF463BP1 12v class d amplifier 100W PDF

    ARF463A

    Abstract: ARF463AP1 ARF463AP1G ARF463BP1 ARF463BP1G VK200-4B
    Text: ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G RF POWER MOSFETs TO-247 S N - CHANNEL ENHANCEMENT MODE 125V 100A 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been


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    ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* O-247 100MHz ARF463AP1 ARF463BP1 100MHz. 36MHz ARF463A ARF463AP1G ARF463BP1G VK200-4B PDF

    ARF463AP1G

    Abstract: VK200-4B 12v class d amplifier 100W ARF463A class b power transistors current gain TO247s 100W rf power transistor 100MHz class B push pull power amplifier ARF463AP1 ARF463BP1
    Text: ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G RF POWER MOSFETs TO-247 S N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been


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    ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* O-247 100MHz ARF463AP1 ARF463BP1 100MHz. 36MHz ARF463AP1G VK200-4B 12v class d amplifier 100W ARF463A class b power transistors current gain TO247s 100W rf power transistor 100MHz class B push pull power amplifier PDF

    ARF460A/B

    Abstract: No abstract text available
    Text: ARF460A ARF460B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


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    ARF460A ARF460B O-247 65MHz ARF460A ARF460B O-247 185nH VK200-4B ARF460A/B ARF460A/B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96274 IRFI4019HG-117P DIGITAL AUDIO MOSFET Key Parameters Features Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Ÿ Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications


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    IRFI4019HG-117P O-220 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: r = T S C S -T H O M S O N [L iO T li* S TD A 2004A 10+10W STEREO AMPLIFIER FOR CAR RADIO The TD A 2004A is a class B dual audio power am plifier in M U L T IW A T T ® package specifically designed fo r car radio applications; stereo am pli­ fiers are easily designed using this device that


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    PDF

    TDA7482

    Abstract: 560PF MULTIWATT15
    Text: SGS-TtiOMSON 7/ RfflDg^OmLitgTnEiORDDtgS TD A 7482 25W MONO CLASS-D AMPLIFIER • 25W OUTPUT POWER: R l = 8i2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ WIDE SUPPLY VOLTAGE RANGE UP TO ±25V ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES


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    TDA7482 TDA7482 Multiwatt15 Multiwatt15 560PF PDF

    60mH inductor

    Abstract: 58120 COIL77120 TDA7480
    Text: 7/ SGS-TtiOMSON RfflDg^OmLitgTnEiORDDtgS TD A 7480 10W MONO CLASS-D AMPLIFIER • 10W OUTPUT POWER: R l = 8i2/4£2; THD = 10% ■ HIGH EFFICIENCY ■ NO HEATSINK ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION


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    TDA7480 TDA7480 10OnF 2200nF 27ufacturer 60mH inductor 58120 COIL77120 PDF

    Untitled

    Abstract: No abstract text available
    Text: / = T SGS-THOMSON TD A2007A 6 + 6W SHORT-CIRCUIT PROTECTED STEREO AMPLIFIER A D VA N C E DATA • ■ ■ ■ HIGH OUTPUT POWER HIGH CURRENT CAPABILITY AC SHORT CIRCUIT PROTECTION THERMAL OVERLOAD PROTECTION DESCRIPTION The TDA2007A is a class AB dual Audio power am­


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    A2007A TDA2007A PDF

    CS0149

    Abstract: TDA2040
    Text: SGS-THOMSON D g^(Q EL[E(gTr^ iö©i TDA2040 20W Hi-Fi AUDIO POWER AMPLIFIER The TD A 2040 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class A B amplifier. Typically it provides 22W output power (d = 0.5%) at Vs = 32V/4J2.


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    TDA2040 2040H CS0149 TDA2040 PDF

    circuit diagram TDA2030

    Abstract: TDA2030 TDA2030 pin layout amplifier circuit tda2030 tda2030 bridge configuration tda 2030 transistor amplifier circuit "tda2030" 2.1 tda2030 pin configuration TDA2030H TDA2030 2030
    Text: r Z J SG S-TH O M SO N TDA2030 14W The TD A2030 is a m onolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it pro­ vides 14W output power d = 0.5% at 14V/ 4i2; at ± 14V the guaranteed output power is


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    TDA2030 TDA2030 DIN45500) circuit diagram TDA2030 TDA2030 pin layout amplifier circuit tda2030 tda2030 bridge configuration tda 2030 transistor amplifier circuit "tda2030" 2.1 tda2030 pin configuration TDA2030H TDA2030 2030 PDF

    TDA7053

    Abstract: tda7053 application information AV13 7Z215S7
    Text: TDA7053 J V_ 2 x 1 W PORTABLE/MAINS-FED STEREO POWER AMPLIFIER G E N E R A L D E S C R IP T IO N The TD A 7053 is an integrated class-B stereo power amplifier in a 16-lead dual-in-line D IL plastic package. The device, consisting of two B T L amplifiers, is primarily developed for portable audio


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    TDA7053 TDA7053 16-lead TDA70S3 7Z21S56 7110fl2fe 7Z21558 7Z215S7 tda7053 application information AV13 PDF

    D96A

    Abstract: No abstract text available
    Text: / = T S G S -T H O M S O N *> 1 1 » M f f l m e M Q M Ê S TD A7480 10W MONO CLASS-D AMPLIFIER • 10W OUTPUT POWER: R l = 8 ^ /4 ^ ; THD = 10% ■ HIGH EFFICIENCY ■ NO HEATSINK ■ SPLIT SUPPLY ■ OVERVOLTAGE PROTECTION ■ ST-BY AND MUTE FEATURES ■ SHORT CIRCUIT PROTECTION


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    A7480 TDA7480 TDA7480 D96A PDF

    TDA1515

    Abstract: TDA1515BQ
    Text: TDA1515BQ J k _ 24 W BTL OR 2 x 12 W STEREO CAR RADIO POWER AMPLIFIER The TD A 1515BQ is a monolithic integrated class-B output am plifier in a 13-lead single in-line S IL S L a n T r PHaCiT , f o f iS primarily deve*°Ped for car radio applications, and also to drive lowimpedance loads (down to 1 ,6 S I). A t a supply voltage Vp = 14,4 V , an output power of 24 W can be


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    TDA1515BQ TDA1515BQ 13-lead Th61drr 711002b Jul/1994 TDA1515 PDF

    TDA1552Q

    Abstract: sot141r
    Text: TD A 1552Q J k _ 2 X 2 2 W BTL S T E R E O CA R RADIO PO W ER AM PLIFIER GENERAL DESCRIPTION The T D A 1 5 5 2Q is an integrated class-B o u tp u t a m p lifie r in a 13-lead single-in-line SI L plastic pow er package. The c irc u it contains 2 x 2 2 VI a m plifiers in Bridge Tied Load {B T L } co n fig ura tio n . The device


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    TDA1552Q TDA1552Q 13-lead 7110fl2b sot141r PDF