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    CIRCUITS USING BJT Search Results

    CIRCUITS USING BJT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    CIRCUITS USING BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor RCA 467

    Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
    Text: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial


    Original     		PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    EE16 429

    Abstract: EE13 8 pin bobbin transformers MJE13003 st DS-1639 core EE13 5V power supply sot23-6 CAMSEMI MJE13003 TO-92 EE-1312 pc40 core EE13 6 pin bobbin transformers
    Text: Basic Design Guide Low Power Resonant Discontinuous Forward Converter Rapidly Implement Application Circuits up to 6 W Using CamSemi’s Low Power RDFC Topology and Advanced Controller ICs C2471LX2 SOT23-6 CamSemi’s low power RDFC topology and advanced controller IC deliver low cost replacements for linear


    Original     		PDF C2471LX2 OT23-6) DG-2128-0905 06-May-2009 EE16 429 EE13 8 pin bobbin transformers MJE13003 st DS-1639 core EE13 5V power supply sot23-6 CAMSEMI MJE13003 TO-92 EE-1312 pc40 core EE13 6 pin bobbin transformers

    C2162PX2

    Abstract: transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI
    Text: Basic C2160 Design Guide Primary Side Sensing Controller Rapidly Implement Application Circuits Up to 8 W Using CamSemi’s PSS Topology and Advanced Controller ICs C2161PX2 SOT23-6 C2162PX2 (SOT23-6) CamSemi’s PSS topology and advanced controller ICs deliver low cost solutions for flyback power supply


    Original     		PDF C2160 C2161PX2 OT23-6) C2162PX2 DG-3228-0908A 19-Aug-2009 C2162PX2 transistor WT4 wt4 transistor Cambridge capacitor capacitors transistor WT5 52 WT2 pnp transistor transistor WT3 E16 CORE TRANSFORMER 6 pin DPSN sot23-6 CAMSEMI

    3DD5023

    Abstract: E16 10 pin bobbin transformers transformer e19 E20 CORE size E16 10 pin transformers E19 CORE TRANSFORMER E16 CORE TRANSFORMER 6 pin DS-1423 8 pin e25 transformer E16 CORE TRANSFORMER 9 pin
    Text: Basic Design Guide Resonant Discontinuous Forward Converter Rapidly Implement Application Circuits in the Range 6 W to 40 W Using CamSemi’s RDFC Topology and Advanced Controller ICs C2472PX2 SOT23-6 C2473PX1 (SOP-8) CamSemi’s RDFC topology and advanced controller ICs deliver low cost replacements for linear power


    Original     		PDF C2472PX2 OT23-6) C2473PX1 DG-1694-0905 06-May-2009 3DD5023 E16 10 pin bobbin transformers transformer e19 E20 CORE size E16 10 pin transformers E19 CORE TRANSFORMER E16 CORE TRANSFORMER 6 pin DS-1423 8 pin e25 transformer E16 CORE TRANSFORMER 9 pin

    IPC-D-275

    Abstract: IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies EFT 377 A OP09 Z86E08 Signal Path Designer ANSI/IPC-D-275
    Text: APPLICATION NOTE MINIMIZING EMI EFFECTS DURING PCB LAYOUT OF Z8/Z8PLUS CIRCUITS INTRODUCTION The Z8/Z8Plus families have redefined ease-of-use by being the simplest 8-bit microcontrollers to program. Combined with low-cost and extensive device variety, a complete solution is easily implemented. PCB designs using


    Original     		PDF 10-20ns) AN002000-Z8X1099 IPC-D-275 IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies EFT 377 A OP09 Z86E08 Signal Path Designer ANSI/IPC-D-275

    lna 2.5 GHZ s parameter ads design

    Abstract: 5Ghz lna transistor Curtice ATF-55143 ATF-54143 ATF55143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with


    Original     		PDF ATF-55143 ATF55143 o8675 5988-5846EN ECEN4228 ATF-551M4 lna 2.5 GHZ s parameter ads design 5Ghz lna transistor Curtice ATF-54143 BCV62B S402D agilent pHEMT transistor agilent pHEMT transistor LNA LOW NOISE AMPLIFIER

    ATF-55143

    Abstract: ECEN4228 ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285
    Text: Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This paper describes two low noise amplifiers for use in the IEEE 802.11a, ETSI/BRAN HiperLAN/2 5GHz standards. The circuits are designed for use with multilayer 0.031 inch thickness FR-4 printed circuit board


    Original     		PDF ATF-55143 MTT-28, ECEN4228 ATF-551M4 5988-5846EN ATF-54143 application notes ATF-54143 ATF55143 BCV62B Component Library S402D AN-1285

    tsmc 0.18um CMOS transistor

    Abstract: TSMC 0.18um Process parameters Bipolar Junction Transistor TSMC 0.18um ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model ic 7490 TSMC cmos 0.18um 7490 IC CHIP
    Text: Maxim > App Notes > COMMUNICATIONS CIRCUITS Keywords: Source Resistance, CMOS, Source-Follower, Source-Follower gain, BJT, bipolar junction transistor, common drain amplifier, small-signal model, calculating source resistance, intrinisic gm', low-noise amplifier


    Original     		PDF com/an4231 MAX2645: AN4231, APP4231, Appnote4231, tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters Bipolar Junction Transistor TSMC 0.18um ic 7490 data sheet Datasheet of 7490 IC tsmc bjt model ic 7490 TSMC cmos 0.18um 7490 IC CHIP

    power bjt advantages and disadvantages

    Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
    Text: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number


    Original     		PDF HBFP-0405 HBFP-0420 5968-2387E. 5988-6173EN power bjt advantages and disadvantages HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405

    Drive Base BJT

    Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
    Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE


    Original     		PDF AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576

    C2171

    Abstract: No abstract text available
    Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design


    Original     		PDF C2171/2 C2171/2PX2 OT23-6 DS-5175-1406 3-Jun-2014 C2171

    power BJT

    Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
    Text: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of


    Original     		PDF -20dB, com/an644 power BJT HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


    Original     		PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    Abstract: No abstract text available
    Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC


    Original     		PDF 40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    Untitled

    Abstract: No abstract text available
    Text: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost


    Original     		PDF C2173 C2173 OT23-6 DS-5706-1403 03-Mar-2014

    Untitled

    Abstract: No abstract text available
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51881CP SERVO MOTOR CONTROLLER •OVERVIEW The AA51881CP is a BJT integrated circuit to be applied on servo motor control applications. The built-in voltage regulator provides the AA51881CP with extremely stable output voltage. It also incorporates a


    Original     		PDF AA51881CP AA51881CP

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


    Original     		PDF AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor

    "BJT Transistors"

    Abstract: BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter LTC1966 simple bjt circuit DN288
    Text: advertisement RMS-to-DC Conversion Just Got Easy – Design Note 288 Glen Brisebois and Joseph Petrofsky collector current of bipolar junction transistors. This method suffers from a variety of problems. BJT transistors match and track well over temperature while operating at the same collector current, for example in op


    Original     		PDF LTC1966 1-800-4-LINEAR. dn288f "BJT Transistors" BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter simple bjt circuit DN288

    built servo drive circuit

    Abstract: remote control car CIRCUIT DIAGRAM USING MOTOR servo wiring diagram aa51881 A695 circuit diagram of turn signal light of a car AA5188 servo motor datasheet servo drive circuit diagram application high voltage servo drive circuit diagram application
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51881 SERVO MOTOR CONTROLLER • DESCRIPTION The AA51881 is a BJT integrated circuit to be applied on servo motor control applications. The built-in voltage regulator provides the AA51881 with extremely stable output voltage. It also


    Original     		PDF AA51881 AA51881 built servo drive circuit remote control car CIRCUIT DIAGRAM USING MOTOR servo wiring diagram A695 circuit diagram of turn signal light of a car AA5188 servo motor datasheet servo drive circuit diagram application high voltage servo drive circuit diagram application

    servo motor radio control circuit

    Abstract: No abstract text available
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51881CP SERVO MOTOR CONTROLLER •OVERVIEW The AA51881CP is a BJT integrated circuit to be applied on servo motor control applications. The built-in voltage regulator provides the AA51881CP with extremely stable output voltage. It also incorporates a


    Original     		PDF AA51881CP AA51881CP servo motor radio control circuit

    TRANSISTOR cBC 449

    Abstract: No abstract text available
    Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller


    Original     		PDF UCC28722 UCC28722 50-mW TRANSISTOR cBC 449

    PD178018A

    Abstract: D178004A d1780
    Text: U M IM o n c c i MOS INTEGRATED CIRCUIT f i D178004A, 178006A, 178016A, 178018A 8-BJT SINGLE-CHIP M ICROCONTROLLERS 1 FAST TRACK The/iPD178004A, 178006A, 178016A and 178018A are 8-bit single-chip C M O S microcontrollers that incorporate hardware for digital tuning systems.


    OCR Scan     		PDF D178004A, 78006A, 78016A, 78018A uPD178004A uPD178006A uPD178016A uPD178018A 78K/0 PD178018A D178004A d1780

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI •■ ■ » * * iii HY29F016 2Mx 8 bjt CMQS 5 Qv ^ n|y Sector Erase F[ash Memory Advanced Information DESCRIPTION The HY29F016 is a 16Mbit, 5.0V-only Flash memory organized as 2Mbytes of 8 bits each. The 2Mbytes of data is organized as 32 sectors of 64K bytes for flexible erase capability. The 8 bits of data will appear on DQ0-DQ7.


    OCR Scan     		PDF HY29F016 HY29F016 16Mbit, 48-pin 120ns, 150ns A0-A20 A17CZ