ivo ne 202
Abstract: RS3F3 22PP bsecm 3CKH 50slb
Text: SIA thru SIM FEATURES t Rating to 1OOOV PRV l l - For surface mounted applications Reliable low cost construction utilizing molded plastic technique l Plastic material has Underwrites Laboratory l flammability ciasslfication 94V-0 Lead sclderabie per MIL-STD-202 Method 206
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MIL-STD-202
69grams
ivo ne 202
RS3F3
22PP
bsecm
3CKH
50slb
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BYW27
Abstract: No abstract text available
Text: BYW27-50GP THRU BYW27-1000GP GLASS PASSIVATED JUNCTION PLASTIC MINIATURE RECTIFIER Voltage - 50 to 1000 Volts Current -1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con structed rectifiers ♦ Plastic package has Underwriters Lab^ oratory Flammability Ciassification 94V-0
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BYW27-50GP
BYW27-1000GP
DO-41
MIL-S-19500
99ent
BYW27
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DIS CR ETE b'lE » bbSa'm DOaiSim T 73 BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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BLW99
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M5M4V16S30CTP
Abstract: M5M4V16S40CTP M5M4V16s30 M5M4V16S30CTP-10
Text: •SUPER HIGH SPEED DYNAMIC RAMs Memory Ciassfication capacity Memory Configuration 4Mx4 2Mx8 16M 4Mx4 2Mx8 Synchronous Dynamic RAM 1Mx16 16Mx4 64M BMxS 4Mxl6 Max. access time Typ. :■ T»!» Ifo. power dissipation . ns 5 6 B 5 6 8 8 8 9 8 8 9 8 8 9 6 7
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MSM4S16S21CTP-7
MSM4S16S
21CTP-8
M5M4SI6521CTP-I0
M5M4S16S31CTP-7
M5M4S16S31
M5M4S16S31CTP-10
M5M4V16S20CTP-10
M5M4V16S20CTP-12
M5M4V16S20CTP-1S
M5M4V16S30CTP
M5M4V16S40CTP
M5M4V16s30
M5M4V16S30CTP-10
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BA314
Abstract: IEC134 UBC671 bb53
Text: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.
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BA314
DO-35
DO-35
OD-27)
DD2bl52
BA314
IEC134
UBC671
bb53
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RZ2833B45W
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E ObE D _1_L bbSB^l • 0015551 1 RZ2833B45W r- ss-is PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in a common-base ciass-C broadband pulse power amplifier with a frequency range of 2,8 to 3,3 GHz.
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100/us;
0015S55
RZ2833B45W
7Z24143
RZ2833B45W
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RTC144
Abstract: LKE2015T LTE21015R
Text: N AUER PHILIPS/DISCRETE ObE D • ^53=131 G O I M ^ MAINTENANCE TYPE 1 ■ LKE20Ï5T for new design use LTE21015R T - 2 3 - 0 5 - M ICROW AVE LINEAR POW ER TRANSISTO R N-P-N transistor for use in a common-emitter ciass-A linear power amplifier up to 2 GHz.
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LTE21015R)
LKE20Ã
T-23-Ã
FO-53.
T-33-QS
RTC144
LKE2015T
LTE21015R
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IEC134
Abstract: LAE4002S
Text: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure
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LAE4002S
OT-100.
L-13-â
Zo-50n
IEC134
LAE4002S
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BF470
Abstract: BF472 BF471 BF469 54t1
Text: I I b3E T> m bhS3TE4 DG742Ô2 ÖTM « S IC 3 BF470 BF472 NAPC/PHILIPS SEMICON] FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC06 OR DATASHEET SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic envelope Intended fo r ciass-B video o u tp u t stages in television receivers
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DG742Ã
BF470
BF472
BF469
BF471
O-126
OT-32)
BF472
54t1
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Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE CERAMIC CHIP CAPACITORS CIASS 2 CNC 4 . CNC 6 . CNC 7 . CNC 12 Modele normaUse/Standard mode! CNC 12 CNC V CNC 12A CNC VA CNC 4 CNC 4A | CNC 6 CNC6A CNC 7 CNC 7 A ZEE Option etamage/Tinned option ic TcT :E Conditionnement possible//V«.y/fcfe packaging
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transistor M7A
Abstract: philips 33m PZ1418B30U PZ1721B25U PZ2024B20U epsilam 10
Text: PZ1418B30U PZ1721B25U JÌ P Z 2 0 2 4 B 2 0 U PHILIPS INTERNATIONAL SbE D • 711GÛ2b DCmb47fl ITH ■ PHIN MICROWAVE POWER TRANSISTORS FOR WIDEBAND AMPLIFIERS NPN transistors fo r use in common-base, ciass-B, broadband am plifiers under CW conditions in
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PZ1418B30U
PZ1721B25U
PZ2024B20U
transistor M7A
philips 33m
PZ1418B30U
PZ1721B25U
PZ2024B20U
epsilam 10
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS /DISCR ETE b b S a ^ l OOEfi^Ql 2m BLV10 b^E » IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and
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BLV10
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b83006
Abstract: diode schottky b83006 B83-006 diode b83
Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass
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B83-006
I95t/R89)
b83006
diode schottky b83006
diode b83
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Untitled
Abstract: No abstract text available
Text: RGP15A THRU RGP15M MINIATURE GLASS PASSIVATED JUNCTION PLASTIC FAST SWITCHING RECTIFIER Voltage - 50 to 1000 Volts Current - 1.5 Amperes FEATURES ♦ High temperature metallurgically bonded con structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Ciassification 94V-0
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RGP15A
RGP15M
DO-15
MIL-S-19500
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LWE2025R
Abstract: Transistor 5331 class-A amplifier
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OOISQES 3 ■ LWE2D25R A M IC R O W A V E LINEAR POW ER T RA N SIST O R N-P-N silicon power transistor for use in a common-emitter, ciass-A amplifier up to 2,3 GHz in c.w.
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ALWE2D25R
LWE2025R
LWE2025R
Transistor 5331
class-A amplifier
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condensateur ceramique 104
Abstract: 93133
Text: CONDENSATEURS CHIPS CERAMIQUE CLASSE 1 CERAMIC CHIP CAPACITORS CLASS I GENERAL INFORMATION COMPOSITION Les condensateurs de ciasse 1 NPO sont realises avec un dielectnque a base d'oxyde de titane (Ti 0,) modifie pour l’essentiel par de l’oxyde de magnesium Mg 0 (cas des ceramiques blanches) ou un oxyde de
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A348
Abstract: ERB83-006 jv marking a349
Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications V oltage ciass
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ERB83-006
A348
jv marking
a349
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Untitled
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
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tab53
RZ2833B15W
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D • ^ 5 3 1 3 1 QD15E37 7 A RZ2731B60W PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base ciass-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.
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QD15E37
RZ2731B60W
bbS3T31
DD1S241
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t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
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OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
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ERB83-006
Abstract: Collmer Semiconductor
Text: ERB83-006 2A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f Color code : White • Super high speed switching • High reliability by planer design Abridged type name ■ Applications Voltage ciass • High speed power switching CD ▼
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ERB83-006
do-41
ERB83-006
Collmer Semiconductor
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2 LOIF
Abstract: 017L
Text: 7764 I ë 1.0 MONITOR PART NUMBER 6732-01 CM 9 9.0 CIASSIFICATION OSCILLATOR. CRYSTAL. VOLTAGF CONTRO!IFU m CO s i 3.0 ELECTRICAL CHARACTERISTICS NOTE 1 3.1 NOMINAL FREQUENCY 12.352 MHz 3.1.1 CALIBRATION TOLERANCE 3.1.2 ADJUSTMENT RANGE 3.1.2.1 ADJUSTMENT RESOLUTION
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DNEN90N
S6732012
5M-1982,
08HMAX
815C20
703MAX
2 LOIF
017L
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ 20193 60 Watts, 1800 -1900 MHz Cellular Radio RF Power Transistor <preiiminary PTB Key Features Description The 20193 is a ciass AB, NPN, common emitter RF Power Tran sistor intended for 26 VDC operation across the 1.8 - 1 . 9 GHz frequency band. It is rated at 60 Watts minimum output power
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120mA
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Untitled
Abstract: No abstract text available
Text: MOLDED CERAMIC CAPACITORS CLASS I TCE 61.62.63.64 Dieleetrique Ceramiqae ciasse 1 Technologic Chins mulUcoudie Ciasse Coef. de temperature Tension nominate URc _ Tension de tenue Tangente 6 a 1 MHz ! 5 pF ^ C r < 50 pF 50 pF < CR< 1 000 pF _ _ Tangente 6 a I kHz
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SO000
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