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    Infineon Technologies AG BB535E7904HTSA1

    DIODE VAR CAP 30V 20MA SOD-323
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    DigiKey BB535E7904HTSA1 Reel 21,000 3,000
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    BB535E7904HTSA1 Cut Tape 1,194 1
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    Mouser Electronics BB535E7904HTSA1 6,143
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    Verical BB535E7904HTSA1 117,000 9,000
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    Arrow Electronics BB535E7904HTSA1 3,000 4 Weeks 3,000
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    BB535E7904HTSA1 3,000 4 Weeks 3,000
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    Newark BB535E7904HTSA1 Cut Tape 7,267 5
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    Rochester Electronics BB535E7904HTSA1 6,000 1
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    TME BB535E7904HTSA1 2,990 1
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    Ameya Holding Limited BB535E7904HTSA1 7,203
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    Chip1Stop BB535E7904HTSA1 Cut Tape 9,000
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    BB535E7904HTSA1 3,000
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    SunLED Group XZFBB53W-8ST

    LED BLUE CLEAR CHIP SMD
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    DigiKey XZFBB53W-8ST Reel 8,000 4,000
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    XZFBB53W-8ST Cut Tape 5,816 1
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    NAC XZFBB53W-8ST 1
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    SunLED Group XZFBB53W-1

    LED BLUE CLEAR 2SMD
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    DigiKey XZFBB53W-1 Cut Tape 4,444 1
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    XZFBB53W-1 Reel 2,000 2,000
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    SunLED Group XZFBB53W-8

    LED BLUE CLEAR 2SMD
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    DigiKey XZFBB53W-8 Cut Tape 3,459 1
    • 1 $0.61
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    NAC XZFBB53W-8 Reel 25 1
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    SunLED Group XZCFBB53W-1VF

    LED BLUE CLEAR 0603 SMD
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    DigiKey XZCFBB53W-1VF Reel 2,000 2,000
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    XZCFBB53W-1VF Cut Tape 787 1
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    XZCFBB53W-1VF Digi-Reel 1
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    Find more BB53 price and stock on Findchips.com

    BB53 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BB531 ITT Industries Solid State Tuner Components Scan PDF
    BB531 ITT Semiconductors Solid State Tuner Components Scan PDF
    BB531 Micronas Semiconductor Variable-Capacitance Tuner Diodes Scan PDF
    BB531 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BB535 Infineon Technologies Silicon variable capacitance diode for UHF and TV-TR tuners Original PDF
    BB535 Infineon Technologies UHF and VHF Tuner; Package: PG-SOD323-2; Configuration: Single; IF (max): 20.0 mA; CT1 (typ): 18.7 pF; CT2 (typ): 15.0 pF; CT / C T: 6.7 (2/25V); Original PDF
    BB535 Infineon Technologies DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 Original PDF
    BB535 Leshan Radio Company Silicon Variable Capacitance Diode Original PDF
    BB535 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BB535 Siemens Cross Reference Guide 1998 Original PDF
    BB535 Siemens Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) Original PDF
    BB535 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BB535E6700 Infineon Technologies DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R Original PDF
    BB535E7779 Infineon Technologies DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R Original PDF
    BB535E7904 Infineon Technologies Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VAR CAP 30V 20MA SOD-323 Original PDF
    BB535E7904 Infineon Technologies DIODE VAR CAP SINGLE 30V 17.5PF 2SOD323 T/R Original PDF
    BB535E7904HTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Variable Capacitance (Varicaps, Varactors) - DIODE VAR CAP 30V 20MA SOD-323 Original PDF
    BB535E7906 Infineon Technologies DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R Original PDF
    BB535E7907 Infineon Technologies DIODE VAR CAP SINGLE 35V 17.5PF 2SOD323 T/R Original PDF
    BB535E7908 Infineon Technologies Variable Capacitance Diodes (Varicaps, Varactors), Discrete Semiconductor Products, DIODE VARACTOR 30V SOD-323 Original PDF

    BB53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 o o i n n DEVELOPMENT DATA 6TV160V SERIES This data sheet contains advance information and specifications ere subject to change without notice. ObE D N AMER PHILIPS/DISCRETE FAST GATE TURN-OFF THRYRISTORS Thyristors in IS O T O P envelopes with electrically isolated metal baseplates capable of being turned


    OCR Scan     		PDF bb53T31 6TV160V 100QR 1200R BTV160V

    PHILIPS BYX50-200

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:


    OCR Scan     		PDF bb53T31 BYX50 BYX50â bbS3T31 0010S5S tt53T31 PHILIPS BYX50-200

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D • bb53R31 0D3Q47S 34R M A P X Philips Semiconductors Product specmcauon Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF bb53R31 0D3Q47S BUK436-1000B bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/BISCRETE bRE D bb53331 □□30630 804 B A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    OCR Scan     		PDF bb53331 OT223 BUK581-60A bbS3831 D030fl35 OT223.

    Untitled

    Abstract: No abstract text available
    Text: bb53^31 0031bb4 512 » A P X Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ108 b^E D N AMER PHILIPS/DISCRETE PINNING DESCRIPTION PIN The BFQ108 is a high output voltage PNP transistor in a SOT 122A envelope, primarily intended for use


    OCR Scan     		PDF 0031bb4 BFQ108 BFQ108 45005B)

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


    OCR Scan     		PDF bb53T31 BFQ67W OT323 UBC870 OT323. OT323

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'JE D bb53R31 OQSbSlfi DOT APX B Y /U t BY706 SILICON EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-voltage applications. The devices feature non-snap-off characteristics. Because o f the small envelope, the diodes should be


    OCR Scan     		PDF bb53R31 BY706 BY705 002fci52Q

    Untitled

    Abstract: No abstract text available
    Text: bb53R31 0 0 3 1 5 2 6 3T0 • APX Philips Semiconductors Product specification PNP 5 GHz wideband transistor — — — — — -— DESCRIPTION BFQ24 ■ N AUER PHILIPS/DISCRETE bRE » PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes


    OCR Scan     		PDF bb53R31 BFQ24 BFQ22S. MEA371 MEA365 MEA372

    Untitled

    Abstract: No abstract text available
    Text: APX bb53T31 □□23737 b37 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN304; BSN304A N AUER PH IL IPS /DISCR ETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching


    OCR Scan     		PDF bb53T31 BSN304; BSN304A Lb53131 bbS3T31 QD237T3

    Untitled

    Abstract: No abstract text available
    Text: bb53R31 0 0 3 2 3 5 3 bfll M AP X Philips Sem iconductors Product specification CATV amplifier module BGY67 N APER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation


    OCR Scan     		PDF bb53R31 BGY67 PINNING-SOT115C DIN45004B;

    Untitled

    Abstract: No abstract text available
    Text: AflER PHILIPS/DISCRETE Philips Semiconductors bRE T> m bb53R31 002A33R flS7 « A P X Product Specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope


    OCR Scan     		PDF bb53R31 002A33R BU2508A 00EB343

    Untitled

    Abstract: No abstract text available
    Text: b'lE D N AMER PHILIPS/DISCRETE • bb53131 D0277D2 m i BF494 ■ APX V _ J SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source


    OCR Scan     		PDF bb53131 D0277D2 BF494 BF494B

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.


    OCR Scan     		PDF bb53T31 BU705F BU705DF OT199 BU705DF BU705DF) 7Z62340

    BTY79-400R

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb53^31 00S73A3 T77 H A P X B IY79 StHIhS b'lE » THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended for use in power control circuits e.g. light and motor control and power switching systems. The series consistos of reverse polarity types (anode to stud) identified by a suffix R: BTY79-400R to


    OCR Scan     		PDF 00S73A3 BTY79-400R 1000R. BTY79-400R 1000R DD273aT bb53T31 BTY79

    Untitled

    Abstract: No abstract text available
    Text: bTE bb53^31 0 0 2 7 W 143 « A P X D JC327 JC327A JC328 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC327, JC327A, JC328 are complementary to the JC337, JC337A and JC338 respectively.


    OCR Scan     		PDF JC327 JC327A JC328 JC327, JC327A, JC328 JC337, JC337A JC338

    Untitled

    Abstract: No abstract text available
    Text: I N AflER PHILIPS/DISCRETE I bb53R31 DDSflS3fl T3T blE D B U 505 BU505D SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn power transistor in a TO-220 envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The BU505D has an integrated efficiency


    OCR Scan     		PDF bb53R31 BU505D O-220 BU505D BU505D) bbS3T31 0D26243

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		PDF bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor

    BYD14

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.


    OCR Scan     		PDF bb53T31 002bS52 BYD14 BYD14D

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation


    OCR Scan     		PDF bb53T31 3Db40 BUK455-60A/B BUK455 -TO220AB

    Untitled

    Abstract: No abstract text available
    Text: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages


    OCR Scan     		PDF bb53c BCX51 BCX52 BCX53 BCX54, BCX55 BCX56

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications


    OCR Scan     		PDF bb53331 DD273SD BT152 220AB BT152-400R 002732b 10I-2

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION


    OCR Scan     		PDF bb53T31 BF752 BF752 OT143 MSB014 OT143.

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse


    OCR Scan     		PDF bb53R31 DD2bR44 BAL74W

    Untitled

    Abstract: No abstract text available
    Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.


    OCR Scan     		PDF bb53T31 BSS192 A/-10 bb53t MC073B