ic1 555
Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A ZSD100 Piezo Transducers voltage controlled oscillator using ic 555
Text: Application Note 16 Issue 1 March 1996 Application Note 16 Issue 1 March 1996 ZD1 Automotive and Household Siren Driver Circuits D5 R6 +12V C5 R12 ZSD100 and Discrete ’H’ Bridge Minimum Part Count Solution R13 D2 D4 TR6 TR4 David Brotton Neil Chadderton
|
Original
|
PDF
|
ZSD100
ZSD100
ic1 555
ic2 555
ZTX850
ZTX950
DATASHEET OF IC 555
555 timer astable multivibrator
790A
Piezo Transducers
voltage controlled oscillator using ic 555
|
ci 555
Abstract: internal architecture of 555 PS29FS400 ds003
Text: PROGRAMMABLE SILICON SOLUTIONS 4 Mb 512K x 8 / 256K x 16 Ultra High-Speed Uniform Boot Sector Flash Memory PS29FS400 PRODUCT DESCRIPTION • Ultra High-Performance FLASH Memory – 20, 25, 35 & 45 ns Read Access Time – Eliminates Need for Shadow-RAM The PS29FS400 is a very high-speed CMOS FLASH
|
Original
|
PDF
|
PS29FS400
PS29FS400
DS003
ci 555
internal architecture of 555
|
Untitled
Abstract: No abstract text available
Text: Product Brief February 2002 T7570 Programmable PCM Codec with Hybrid-Balance Filter Description Features • Programmable internal hybrid-balance network ■ Programmable transmit gain: — 19.4 dB range, 0.1 dB step size ■ Programmable receive gain: — 19.4 dB range, 0.1 dB step size
|
Original
|
PDF
|
T7570
PB02-066ALC
PN98-124ALC)
|
SOP24
Abstract: PDIP28 U631H16 a9235
Text: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile
|
Original
|
PDF
|
U631H16
U631H16
PDIP28
300mil)
SOP24
PDIP28
a9235
|
CI 555 data
Abstract: ATT3000 ci 555 ci 7495 XILINX XC3000 ATT3020
Text: Product Brief December 1996 ATT3000 Series Field-Programmable Gate Arrays Features • High performance: — Up to 270 MHz toggle rates — 4-input LUT delays <3 ns ■ Flexible array architecture: — 2000 to 9000 gate logic complexity — Extensive register and I/O capabilities
|
Original
|
PDF
|
ATT3000
PN97-010FPGA
PN95-052FPGA)
CI 555 data
ci 555
ci 7495
XILINX XC3000
ATT3020
|
SST39VF6401B
Abstract: SST39VF6402B SST39VF6401B-70-4I-EKE sst39vf6401b-70-4i SST39VF640x
Text: Not recommended for new designs. Please use SST38VF6401/6402/6403/64040 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B A Microchip Technology Company Not Recommended for New Designs The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose
|
Original
|
PDF
|
SST38VF6401/6402/6403/64040
SST39VF6401B
SST39VF6402B
SST39VF6402B
DS25008A
SST39VF6401B-70-4I-EKE
sst39vf6401b-70-4i
SST39VF640x
|
Untitled
Abstract: No abstract text available
Text: Not recommended for new designs. Please use SST38VF6401/6402/6403/64040 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B A Microchip Technology Company Not Recommended for New Designs The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose
|
Original
|
PDF
|
SST38VF6401/6402/6403/64040
SST39VF6401B
SST39VF6402B
SST39VF6402B
DS25008A
|
PDIP24
Abstract: U635H16 A-9215
Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile
|
Original
|
PDF
|
U635H16
U635H16
PDIP24
A-9215
|
D0000H-DFFFFH
Abstract: No abstract text available
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
|
Original
|
PDF
|
30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
D0000H-DFFFFH
|
DP3SZ128512X16NY5
Abstract: SA10 SA11 SA12 SA13 Dense-Pac Microsystems
Text: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of
|
Original
|
PDF
|
30A193-00
DP3SZ128512X16NY5
DP3SZ128512X16NY5
128Kx16
512Kx16
SA10
SA11
SA12
SA13
Dense-Pac Microsystems
|
ci 7495
Abstract: PN99-153FPGA OR3LP26B PS240
Text: Preliminary Product Brief September 1999 ORCA OR3LP26B Field-Programmable System Chip FPSC Embedded Master/Target PCI Bus Interface Introduction Lucent Technologies Microelectronics Group has developed a solution for designers who need the many advantages of an FPGA-based design implementation, coupled with the high bandwidth of an
|
Original
|
PDF
|
OR3LP26B
64-bit
sol49)
PN99-153FPGA
PN99-047FPGA)
ci 7495
PN99-153FPGA
PS240
|
Am29LV002T
Abstract: No abstract text available
Text: A D V A N C E I N F O R M A T IO N AMDZ1 Am29LV002 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Algorithms ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write
|
OCR Scan
|
PDF
|
Am29LV002
Am29LV002T
|
e555
Abstract: of ic ne555 NE555 NE555 specification NE555 s08 general information of NE555 ic SA555 SE555 IC NE555 NE555 astable
Text: . . S G S -T H O M S O N G*D^ElHraBM g@ NE555 SA555 - SE555 GENERAL PURPOSE SINGLE BIPOLAR TIM ERS . LOW TURN OFF TIME . MAXIMUM OPERATING FREQUENCY GREATER THAN 500kHz . TIMING FROM MICROSECONDS TO HOURS . OPERATES IN BOTH ASTABLE AND MONOSTABLE MODES . HIGH OUTPUT CURRENT CAN SOURCE OR
|
OCR Scan
|
PDF
|
NE555
SA555
SE555
500kHz
SINK200mA
NE555monolithic
e555
of ic ne555
NE555
NE555 specification
NE555 s08
general information of NE555 ic
SE555
IC NE555
NE555 astable
|
M51841P
Abstract: PC617 NE555 hai7555 NE555 signetics 555ne IC NE555 ta7555 LM555 ha17555 ic PC617
Text: //PC617, ^PC1555 1E W .Ù : 9 •< 5 V X ' < y /(PC 617 94 -* ■ i ' — l± a « X J S ffl, L T IÏItS J x fc lC 9 3? í O J 2 T S H /iP C 1555 £*~C ii-m m x -, # & «t 9 X -, * S ^ 5 Ê , # i» !j ÿ w x n -tr ->> j», « j H t t K C i E C f c p 'M f c S Î I W 'C -
|
OCR Scan
|
PDF
|
uPC617,
uPC1555
PC617C,
PC1555C)
/iPC617G2,
//PC1555G
/PC1555C
-100k
SE555
TA7555
M51841P
PC617
NE555
hai7555
NE555 signetics
555ne
IC NE555
LM555 ha17555
ic PC617
|
|
|
Untitled
Abstract: No abstract text available
Text: Tem ic TLH.5800 TELEFUNKEN Semiconductors High Efficiency LED, 0 5 mm Untinted Non-Diffused Type Color Yellow Green Pure green TLHY5800 TLHG5800 TLHP5800 Technology GaAsP on GaP GaP on GaP GaP on GaP Angle of Half Intensity ±*i>: 4° I Description The TLH.5800 series was developed for standard applica
|
OCR Scan
|
PDF
|
TLHY5800
TLHG5800
TLHP5800
|
of ic ne555
Abstract: e555 NE555 IC NE555 Ne555 ic NE555 pulse generator general information of NE555 ic NE555 s08 NE555 sgs SE5550
Text: -, SGS-THOMSON ‘•TC GfflOtaMlilUI^DMDeS NE555 SA555 -SE555 GENERAL PURPOSE SINGLE BIPOLAR TIM ERS . LOW TURN OFF TIME . MAXIMUM OPERATING FREQUENCY GREATER THAN 500kHz . TIMING FROM MICROSECONDS TO HOURS . OPERATES IN BOTH ASTABLE AND MONOSTABLE MODES
|
OCR Scan
|
PDF
|
NE555
SA555
SE555
500kHz
SINK200mA
NE555
of ic ne555
e555
IC NE555
Ne555 ic
NE555 pulse generator
general information of NE555 ic
NE555 s08
NE555 sgs
SE5550
|
AM29LV400B-120EC
Abstract: 2q514
Text: î>W R L I M i N A R v AMD il Am29LV400 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
|
OCR Scan
|
PDF
|
Am29LV400
8-Bit/256
16-Bit)
AM29LV400B-120EC
2q514
|
555 as monostable
Abstract: ASTABLE TIMER general information of NE555 ic
Text: w # k7 A S G S -T H O M S O N N E 555 S A 555 - S E 555 GENERAL PURPOSE SINGLE BIPOLAR TIMERS . LOW TURN OFF TIME • MAXIMUM OPERATING FREQUENCY GREATER THAN 500kHz . TIMING FROM MICROSECONDS TO HOURS ■ OPERATES IN BOTH AST ABLE AND MONOSTABLE MODES . HIGH OUTPUT CURRENT CAN SOURCE OR
|
OCR Scan
|
PDF
|
500kHz
200mA
NE555monolithictiming
555 as monostable
ASTABLE TIMER
general information of NE555 ic
|
I-CUBE
Abstract: 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009
Text: & l •Cube IQ Family Data Sheet Update IQ96, IQ64B, IQ48, IQ32B Features Description • • These additional members in the IQ previously called FPID family are based on 0.6|im CMOS Process. • • • • • 32, 48, 64 and 96 I/O Ports SRAM-based Programming for In-system
|
OCR Scan
|
PDF
|
IQ64B,
IQ32B
I-CUBE
2P034
P001
pb416
PO88
TPA 4863
A18K
tq52
P046
P009
|
mpd5555
Abstract: upd5555 PD5555 PD5555G 5555G cito RF mpd555
Text: NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ;uPD5555 C M O S T IM E R Description T he ¿1PD5555 is a CMOS RC tim e r pro v id in g s ig n ific a n tly im proved perform ance over the standard b ip o la r 555 tim e r, w h ile a t the same tim e being d ire c t replacem ent fo r th a t device in m ost applications. Im proved parameters
|
OCR Scan
|
PDF
|
uPD5555
1PD5555
juPD5555
PD5555
IC--1994
1987P
b427525
007QSS4
mpd5555
PD5555
PD5555G
5555G
cito RF
mpd555
|
BTS555P
Abstract: TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch
Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection
|
OCR Scan
|
PDF
|
O-218AB/5
BTS555P
Q67060-tbd-tbd
E3146
E3146
Q67060-tbd-tbd
023SbOS
TO218AB package
SIEMENS 3 TB 40 12 - 0A
TO-218AB Package
TO-218AB
siemens 12V small relays
SIEMENS 3 TB 40 10 - 0A
Smart Highside High Current Power Switch
|
Untitled
Abstract: No abstract text available
Text: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g
|
OCR Scan
|
PDF
|
DP3SZ128512X16NY5
P3SZ12851
30A193-00
|
Untitled
Abstract: No abstract text available
Text: 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 6 5 RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL 2 3 4 77 PROJ ECTI ON INTERNATIONAL RI GHTS DI ST LOC 19 BD RESERVED. CONNECTOR NATES WI TH ANY 15 POSN PLUG IN A N P L I N I T E
|
OCR Scan
|
PDF
|
55RI55.
095EPT99
09-5EP-99
amp34993
/home/amp34993/edmmod
|
Untitled
Abstract: No abstract text available
Text: ñ EBSbOS SIEMENS GDTSmS GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump
|
OCR Scan
|
PDF
|
fl235b05
A235bD5
023SbDS
|
