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    U635H16 Search Results

    U635H16 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    U635H16 Unknown PowerStore 2K x 8 nvSRAM Original PDF
    U635H16 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC25 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC35 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDC45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK25 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK35 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BDK45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC25 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC25 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC35 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC35 ZMD America PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC45 ZMD PowerStore 2K x 8 nvSRAM Original PDF
    U635H16BSC45 ZMD America PowerStore 2K x 8 nvSRAM Original PDF

    U635H16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description S High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    PDIP24

    Abstract: U635H16
    Text: U635H16 PowerStore 2K x 8 nvSRAM F Packages: PDIP24 600 mil Features F F F F F F F F F F F F F F F F SOP24 (300 mil) High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original
    PDF U635H16 PDIP24 900antee D-01109 D-01101 PDIP24 U635H16

    PDIP24

    Abstract: U635H16
    Text: U635H16 PowerStore 2K x 8 nvSRAM F Packages: PDIP24 600 mil Features F F F F F F F F F F F F F F F F SOP24 (300 mil) High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time


    Original
    PDF U635H16 PDIP24 900ntend D-01109 D-01101 PDIP24 U635H16

    PDIP24

    Abstract: U635H16 ZMD AG
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101 PDIP24 ZMD AG

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description S High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description F High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original
    PDF U635H16 U635H16 D-01109 D-01101

    PDIP24

    Abstract: U635H16 A-9215
    Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


    Original
    PDF U635H16 U635H16 PDIP24 A-9215

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original
    PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


    Original
    PDF 2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


    Original
    PDF GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS

    PT001

    Abstract: 32KX8 U630H16 U63716 U637H256 U635H256 U637256 U631H256 U632H16 U632H64
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10057 02 PCN Status PCN Date October 04, 2006 PCN Type


    Original
    PDF U63xxx UL63xxx U630H16 U632H16 U632H64 U631H256 32KX8 U634H256 U635H256 PT001 U63716 U637H256 U637256

    2KX8

    Abstract: U630H64 U631H16 U631H64 U635H16 U635H64 U63716 U63764 U631H64S2
    Text: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10049 02 PCN Date October 04, 2006 PCN Title DISCONTINUANCE OF:


    Original
    PDF U631H16 U631H16P U635H16 U63716 U630H64 U631H64 U635H64 U63764 UL631H256 2KX8 U631H64S2

    i r 635h

    Abstract: No abstract text available
    Text: U 6 3 5 H 1 6 PowerStore A v a i l a b l e in Q 2 / 9 7 Features □ H igh-perform ance C M O S non­ volatile static RAM 2048 x 8 bits □ 25, 35 and 45 ns Access Tim es □ 12, 20 and 25 ns O utput Enable A ccess Tim es □ lc c = 1 5 m A at 200 ns Cycle


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