CPD73
Abstract: No abstract text available
Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)
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CPD73
28-August
CPD73
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CPD73
Abstract: No abstract text available
Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)
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CPD73
22-March
CPD73
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CP353V
Abstract: CZT853
Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP353V
CZT853
23-May
435-182ess
CP353V
CZT853
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CHIP TRANSISTOR
Abstract: transistor CP353V CZT853
Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP353V
CZT853
CHIP TRANSISTOR
transistor
CP353V
CZT853
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CP353V
Abstract: CZT853
Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP353V
CZT853
22-March
CP353V
CZT853
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transistor
Abstract: CHIP TRANSISTOR CP753V CZT953
Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP753V
CZT953
transistor
CHIP TRANSISTOR
CP753V
CZT953
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CP753V
Abstract: CZT953 chip bonding die
Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP753V
CZT953
22-March
CP753V
CZT953
chip bonding die
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CP753V
Abstract: CZT953
Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area
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CP753V
CZT953
23-May
435-182ess
CP753V
CZT953
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CPD73
Abstract: BRIDGE RECTIFIER BRIDGE-RECTIFIER
Text: Central PROCESS TM Semiconductor Corp. CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC)
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CPD73
CPD73
BRIDGE RECTIFIER
BRIDGE-RECTIFIER
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CP237
Abstract: 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor
Text: PROCESS CP237 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.4 x 12.5 MILS Emitter Bonding Pad Area
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CP237
2N3725
2N3725A
MPQ3725
MPQ3725A
CP237
2n3725a
2N3725
transistor 2N3725
MPQ3725
MPQ3725A
chip die npn transistor
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2N3467 Die
Abstract: 2N3467 2N3468 CP667
Text: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area
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CP667
2N3467
2N3468
2N3467 Die
2N3467
2N3468
CP667
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CM5160
Abstract: CP616 chip die pnp transistor chip die transistor
Text: PROCESS CP616 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area
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CP616
CM5160
CM5160
CP616
chip die pnp transistor
chip die transistor
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CM5583
Abstract: CP618 chip die pnp transistor chip die transistor CM5-5
Text: PROCESS CP618 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area
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CP618
CM5583
CM5583
CP618
chip die pnp transistor
chip die transistor
CM5-5
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SILICON TRANSISTOR CORP
Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426
Text: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area
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CP307
2N6426
2N6427
CMPT6427
CMPTA13
CMPTA14
CXTA14
CZTA14
MPSA13
MPSA14
SILICON TRANSISTOR CORP
transistor
CHIP TRANSISTOR
CP307
ny transistor
ELECTRONIC TRANSISTOR CORP
equivalent mpsa14
mpsa14
MPSa14 equivalent
2N6426
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2N3467
Abstract: CP603 TRANSISTOR GUIDE 2N3468
Text: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA
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CP603
2N3467
2N3468
2N3467
CP603
TRANSISTOR GUIDE
2N3468
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2N2369A
Abstract: CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29
Text: Central TM Semiconductor Corp. PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area
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CP207
2N2369A
CMPT2369
16-August
435-111OCESS
2N2369A
CMPT2369
CP207
chip die npn transistor
chip die transistor
transistor npn 29
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CMPT2369
Abstract: 2N2369A CP207 chip die npn transistor
Text: PROCESS CP207 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area
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CP207
2N2369A
CMPT2369
435-11PROCESS
CMPT2369
2N2369A
CP207
chip die npn transistor
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transistor 2N3725
Abstract: 2N3725 2N3725A CP215 MPQ3725 MPQ3725A
Text: Central PROCESS TM CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA
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CP215
2N3725
2N3725A
MPQ3725
MPQ3725A
transistor 2N3725
2N3725
2N3725A
CP215
MPQ3725
MPQ3725A
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CP566
Abstract: CMPT404A MPS404A chip die pnp transistor
Text: PROCESS CP566 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 11 MILS Base Bonding Pad Area 7.8 x 6.2 MILS Emitter Bonding Pad Area
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CP566
CMPT404A
MPS404A
435-CESS
CP566
CMPT404A
MPS404A
chip die pnp transistor
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CP324
Abstract: 2n7002 12 2N7002 equivalent 2N7002 chip die transistor
Text: Central PROCESS TM Semiconductor Corp. CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area
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CP324
2N7002
18-August
CP324
2n7002 12
2N7002 equivalent
2N7002
chip die transistor
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srf 1714
Abstract: PV22-3
Text: El PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed
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M83446
M83446/17.
MIL-STD-202,
srf 1714
PV22-3
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Untitled
Abstract: No abstract text available
Text: PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed
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M83446
M83446/17.
PV16arometric
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: MONOLITHIC CERAMIC CAPACITOR muftatn. ForWire-bonding/Die-bonding, M LC M icro Chip G M 250 Series •FEATURES 1. Better micro wave characteristics. 2. Suitable for by-passing 3. High density mounting ■APPLICATIONS • Optical device for telecommunication
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GM250
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GM250
Abstract: No abstract text available
Text: MONOLITHIC CERAMIC CAPACITORS FOR WIRE-BONDING/DIE-BONDING MLC MICRO CHIP— GM250 SERIES m uffata /n/iomtvA in Electronics FEATURES • Better m icrowave characteristics ■ Suitable for by-passing ■ High density mounting APPLICATIONS ■ O ptical device for
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GM250
2200pF
C-22-C.
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