chemi-con ps series
Abstract: United Chemi-Con capacitors part marking PS Series chemi-con taping code Chemi-Con Capacitor factory Chemicon ps series
Text: UPGRADE PS Series Engineering Bulletin Nov 02 Actual Size The PS series is the first radial lead miniature series of aluminum capacitors from United Chemi-Con to use a solid functional polymer as the electrolyte. This durable solid capacitor design allows more
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2R5PS680MH11
2R5PS1500MJ12
4PS560MH11
4PS820MJ12
6PS390MH11
6PS680MJ12
10PS270MH11
10PS470MJ12
16PS180MH11
16PS330MJ12
chemi-con ps series
United Chemi-Con capacitors part marking
PS Series
chemi-con taping code
Chemi-Con Capacitor factory
Chemicon ps series
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chemi-con ps series
Abstract: ps series Chemi-Con Capacitor factory
Text: PS Series Actual Size The PS series is the first radial lead miniature series of aluminum capacitors from United Chemi-Con to use a solid functional polymer as the electrolyte. This durable solid capacitor design allows more stable performance and higher reliability over the expected lifetime than normal liquid electrolyte
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100k-300kHz
100kHz
4PS560MH11
4PS820MJ12
6PS390MH11
6PS680MJ12
10PS270MH11
10PS470MJ12
16PS180MH11
16PS330MJ12
chemi-con ps series
ps series
Chemi-Con Capacitor factory
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chemi-con ps series
Abstract: PS Series solid capacitor United Chemi-Con capacitors part marking Chemi-Con Capacitor factory
Text: PS Series Actual Size The PS series is the first radial lead miniature series of aluminum capacitors from United Chemi-Con that uses a solid functional polymer as the electrolyte. Featuring ultra low ESR and high ripple current capability, this durable solid capacitor design with high temperature resistance allows more stable
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100k-300kHz
100kHz
4PS560MH11
4PS820MJ12
6PS390MH11
6PS680MJ12
10PS270MH11
10PS470MJ12
chemi-con ps series
PS Series
solid capacitor
United Chemi-Con capacitors part marking
Chemi-Con Capacitor factory
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T491D106K010AT
Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
T491D106K010AT
MRF377H
PCN13170
nippon capacitors
dvbt
dvbt transmitter
MRF377
T491D106K050at
3A412
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
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sfh817a
Abstract: 1n4007 sod123 D217 OPTO NCP1397 RECTIFIER DIODE D100 diode zd201 opto d206 NCP1252 zener diode 1206 6v8 schematic diagram lcd tv sharp inverter
Text: TND401/D Rev. 2, September 2010 300 W High Performance SLIM LCD TV Power Solution Jean-Paul Louvel LCD TV System Applications 2010 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated
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TND401/D
680uH
EFD30
NCP1052P44G
TP207ST
PH9080NL
sfh817a
1n4007 sod123
D217 OPTO
NCP1397
RECTIFIER DIODE D100
diode zd201
opto d206
NCP1252
zener diode 1206 6v8
schematic diagram lcd tv sharp inverter
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MRF5S9070N
Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070N
100B180JP500X
68 uf 400 volt ac capacitor
crcw12065603f100
865 marking amplifier
MRF5S9070NR
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MRF377HR3
Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377HR3
MRF377HR5
NIPPON CAPACITORS
DS1046
DVB-T acpr
845 motherboard circuit
Nippon chemi
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atc100B100GT500XT
Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21010LSR1
MRF21010
atc100B100GT500XT
ATC100B0R5BT500XT
ATC100B102JT50XT
MRF21010LSR1
T491D106K035AT
Nippon capacitors
Nippon chemi
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MARKING WB1
Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT
Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135LR3
MRF9135L
MARKING WB1
ATC100B470JT500XT
MRF9135LR3
T491D106K035AT
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845 motherboard circuit
Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
845 motherboard circuit
DS1046
NIPPON CAPACITORS
470-860 mhz Power amplifier w
470-860 mhz Power amplifier 5 w
Nippon chemi
845 motherboard
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S9070NR1.
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AN1955
Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this
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MRF5S9070NR1/D
MRF5S9070NR1
AN1955
MRF5S9070NR1
T491D106K035AS
272915l
crcw12065603f100
MRF5S9070NR
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MARKING WB1
Abstract: MRF9135LSR3 ATC100B470JT500XT MRF9135L T491D106K035AT wb1 u 865 marking power amplifier ATC100B8R2BT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L - 2 Rev. 10, 9/2008 RF Power Field Effect Transistor MRF9135LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
MRF9135LSR3
MARKING WB1
MRF9135LSR3
ATC100B470JT500XT
T491D106K035AT
wb1 u
865 marking power amplifier
ATC100B8R2BT500XT
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MRF5S9070NR1
Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRF5S9070MR1
MRF5S9070NR1.
MRF5S9070NR1
marking us capacitor pf l1
A113
A114
A115
AN1955
C101
JESD22
crcw12065603f100
MRF5S9070MR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this
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MRF5S9070NR1/D
MRF5S9070NR1
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MRF9135LSR3
Abstract: MRF9135L MRF9135LR3 DB3-5D
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
880ficers,
MRF9135LR3
MRF9135LSR3
MRF9135LSR3
MRF9135L
DB3-5D
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
MRF9135LR3
MRF9135LSR3
MRF9135L
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MRF9135
Abstract: MRF9135L MRF9135LR3 MRF9135LSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 7, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
MRF9135LR3
MRF9135LSR3
MRF9135
MRF9135L
MRF9135LSR3
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020C
Abstract: A114 A115 JESD22 MRF5S9070NR1 515D107M050BB6A crcw12065603f100 MRF5S9070NR
Text: Freescale Semiconductor Technical Data MRF5S9070NR1 Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070NR1
020C
A114
A115
JESD22
515D107M050BB6A
crcw12065603f100
MRF5S9070NR
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070NR1
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MRF9135LR3
Abstract: MARKING WB1 MRF9135L MRF9135LSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF9135L Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier
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MRF9135L
MRF9135LR3
MRF9135LSR3
MARKING WB1
MRF9135L
MRF9135LSR3
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DATUM
Abstract: MRF5S9070NR
Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1
MRF5S9070MR1
MRF5S9070NR1
DATUM
MRF5S9070NR
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MRF5S9070NR
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with
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MRF5S9070NR1/D
MRF5S9070NR1
MRF5S9070NR
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