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    IRFP250

    Abstract: No abstract text available
    Text: PD-20380B HFA45HI60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VR = 600V VF = 1.7V Qrr = 375nC


    Original     		PD-20380B HFA45HI60C 375nC O-259AA IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: STDID5B N - CHANNEL 55V - 0.1 Ω - 12A TO-252 STripFET POWER MOSFET PRELIMINARY DATA TYPE STDID5B • ■ ■ VDSS R DS on ID 55 V < 0.12 Ω 12 A TYPICAL RDS(on) = 0.1 Ω APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX "T4" FOR ORDERING IN TAPE


    Original     		O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: Evaluates: MAX14970 MAX14970 Evaluation Kit General Description The MAX14970 evaluation kit EV kit provides a proven design to evaluate the MAX14970 dual-channel buffer. The EV kit contains four sections: an application circuit, characterization circuit, and two sets of calibration traces.


    Original     		MAX14970 MAX14970 PDF

    P40NF10

    Abstract: JESD97 STP40NF10 p40nf
    Text: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization


    Original     		STP40NF10 O-220 P40NF10 JESD97 STP40NF10 p40nf PDF

    GCBZ670

    Abstract: STB75NE75 25c016
    Text: STB75NE75 N - CHANNEL 75V - 0.01 Q. - 75A - D^PAK STripFET POWER MOSFET TYPE STB75NE75 V dss R d S o i i Id 75 V < 0 . 0 1 3 Q. 75 A • . . . TYPICAL R D S (o n ) =0.01 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    OCR Scan     		STB75NE75 STB75NE75 O-263 GCBZ670 25c016 PDF

    dm 465

    Abstract: HFA135NH40 IRFP250 NC4000
    Text: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. ƒ = 1V IF(AV) = 135A


    Original     		HFA135NH40 290nC dm 465 HFA135NH40 IRFP250 NC4000 PDF

    HFA140NJ60D

    Abstract: IRFP250
    Text: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. ƒ = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC


    Original     		HFA140NJ60D 340nC HFA140NJ60D IRFP250 PDF

    DS16F95QML

    Abstract: ETS500 5962R0923561VZA LM4050WG2 LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q
    Text: 1 Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference Kirby Kruckmeyer, Member, IEEE, Elisa Morozumi, Member, IEEE, Robert Eddy, Thang Trinh, Tom Santiago and Pierre Maillard, Student Member, IEEE Abstract—National Semiconductor’s 100 krad Si low dose


    Original     		LM4050QML LM4050WG2 com/opf/DS/DS16F95 DS16F95 RS-485 MIL-STD-883 June18, /Downloads/MilSpec/Docs/MIL-STD883/std883 DS16F95QML ETS500 5962R0923561VZA LM4050WG2.5RLQV texas ldr LDR SPECIFICATION TM1019 Radiation Assured Devices LM4050Q PDF

    PD245

    Abstract: No abstract text available
    Text: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V


    Original     		HFA240NJ40C 290nC 08-Mar-07 PD245 PDF

    STD20NF10

    Abstract: No abstract text available
    Text: STD20NF10 N-CHANNEL 100V - 0.038 Ω - 30A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD20NF10 100 V <0.045 Ω 30 A TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION


    Original     		STD20NF10 O-251) O-252) O-251 O-252 STD20NF10 PDF

    HFA160MD40C

    Abstract: IRFP250
    Text: PD-2.454 rev. B 12/98 HFA160MD40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL CATHODE ANODE 1 ANODE 2 Isolated Base


    Original     		HFA160MD40C 260nC HFA160MD40C IRFP250 PDF

    4200-PA

    Abstract: 4200-SCS 4210-SMU 7078-TRX-BNC 4200-CAB-20UX 3m 4200 Keithley 236 4200 PA 4200-SMU 4200-MTRX-3
    Text: Semiconductor Characterization System 4200-SCS The powerful test library management tools included allow standardizing test methods and extractions to ensure consistent test results. The 4200-SCS offers tremendous flexibility, with hardware options that include four different


    Original     		4200-SCS 4200-SCS 4200-PA. 4200-PA 4210-SMU 7078-TRX-BNC 4200-CAB-20UX 3m 4200 Keithley 236 4200 PA 4200-SMU 4200-MTRX-3 PDF

    HFA70NK60C

    Abstract: IRFP250 017t
    Text: PD -2.460A HFA70NK60C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 600V VF typ. ƒ = 1.2V IF(AV) = 70A


    Original     		HFA70NK60C 210nC HFA70NK60C IRFP250 017t PDF

    HFA240NJ40C

    Abstract: IRFP250 2453
    Text: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V


    Original     		HFA240NJ40C 290nC HFA240NJ40C IRFP250 2453 PDF

    HFA210NJ60D

    Abstract: IRFP250 PD-2515
    Text: PD -2.515 rev. A 02/99 HFA210NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC V R = 600V V F typ. ƒ = 1.2V IF(AV) = 210A Qrr (typ.) = 450nC


    Original     		HFA210NJ60D 450nC HFA210NJ60D IRFP250 PD-2515 PDF

    HFA70NH60R

    Abstract: IRFP250
    Text: PD -2.456 rev. B 02/99 HFA70NH60R HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE ANODE V R = 600V V F typ. ƒ = 1.2V IF(AV) = 70A


    Original     		HFA70NH60R 340nC HFA70NH60R IRFP250 PDF

    STS2NF100

    Abstract: No abstract text available
    Text: STS2NF100 N-CHANNEL 100V - 0.23 Ω - 6A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS2NF100 100 V <0.26 Ω 6A TYPICAL RDS(on) = 0.23 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		STS2NF100 STS2NF100 PDF

    HFA140NH60

    Abstract: IRFP250
    Text: PD -2.447 rev. B 03/99 HFA140NH60 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 600V V F typ. ƒ = 1.3V IF(AV) = 140A


    Original     		HFA140NH60 490nC HFA140NH60 IRFP250 PDF

    HFB50HC20C

    Abstract: No abstract text available
    Text: PD - 94238A HFB50HC20C Ultrafast, Soft Recovery Diode FRED Features • • • • VR = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic IF AV = 50A trr = 35ns Description These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power


    Original     		4238A HFB50HC20C 5M-1994. O-258AA. HFB50HC20C PDF

    D-60

    Abstract: HFA60MB60C IRFP250
    Text: PD -2.462 rev. A 03/99 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V


    Original     		HFA60MB60C 200nC D-60 HFA60MB60C IRFP250 PDF

    13010-01HYC

    Abstract: 13010-01HYA 13010-01KYC SVRTR28
    Text: SVRMC28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 4 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRMC Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRMC is specifically designed for use with the SVR series


    Original     		SVRMC28 MIL-PRF-38534 SVRMC28 13010-01HYC 13010-01HYA 13010-01KYC SVRTR28 PDF

    SVRMH28

    Abstract: TM2001 DC Line Filters
    Text: SVRMH28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 2 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRMH Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRMH is specifically designed for use with the SVR series


    Original     		SVRMH28 MIL-PRF-38534 SVRMH28 TM2001 DC Line Filters PDF

    Thermal resistance characterization of Power MOSFETs

    Abstract: MOSFETs thermal resistance of low power semiconductor
    Text: Thermal resistance characterization of Power MOSFETs Anup Bhalla Alpha & Omega Semiconductor January 2003. I. Introduction Power MOSFET junction temperature influences many operational parameters and device lifetime. To estimate device junction temperature in a circuit, or to compare


    Original     		PDF

    ADC16DV160

    Abstract: LMH6517EVAL AN1942 AN-1942
    Text: LMH6517 Evaluation Board LMH6517 Evaluation Board National Semiconductor Application Note 1942 Loren Siebert December 1, 2009 30090011 FIGURE 1. LMH6517EVAL Evaluation Board General Description The LMH6517EVAL evaluation board is designed to aid in the characterization of National Semiconductor’s High Speed


    Original     		LMH6517 LMH6517EVAL AN-1942 ADC16DV160 AN1942 AN-1942 PDF