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    CHANNEL 4422 Search Results

    CHANNEL 4422 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    CHANNEL 4422 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ADS1258 www.ti.com SBAS297B – JUNE 2005 – REVISED DECEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297B 16-Channel, 24-Bit 125kSPS

    Untitled

    Abstract: No abstract text available
    Text: ADS1258 www.ti.com SBAS297A – JUNE 2005 – REVISED SEPTEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297A 16-Channel, 24-Bit 125kSPS

    ADS1258

    Abstract: OPA227 QFN-48
    Text: ADS1258 www.ti.com SBAS297B – JUNE 2005 – REVISED DECEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297B 16-Channel, 24-Bit 125kSPS ADS1258 OPA227 QFN-48

    CA 8772

    Abstract: No abstract text available
    Text: ADS1258 www.ti.com SBAS297B – JUNE 2005 – REVISED DECEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297B 16-Channel, 24-Bit 125kSPS CA 8772

    MO-187

    Abstract: ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC DSA003665
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C03X D-81673 MO-187 ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC DSA003665

    ZXM63C02

    Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665
    Text: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C02X D-81673 ZXM63C02 MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC DSA003665

    B 8836

    Abstract: No abstract text available
    Text: ADS1258 www.ti.com SBAS297B – JUNE 2005 – REVISED DECEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297B 16-Channel, 24-Bit 125kSPS B 8836

    ZXM63C03

    Abstract: ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC 1p63
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C03X ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC 1p63

    crystal oscillator clock 16MHZ

    Abstract: signal conditioning circuits of map sensor circuit diagram of 16-1 multiplexer diodes MSC12xx ADS1258 OPA227 QFN-48
    Text: ADS1258 www.ti.com SBAS297A – JUNE 2005 – REVISED SEPTEMBER 2005 16-Channel, 24-Bit Analog-to-Digital Converter FEATURES • • • • • • • • • • • • • • • • • • DESCRIPTION 24 Bits, No Missing Codes Fixed-Channel or Automatic Channel Scan


    Original     		PDF ADS1258 SBAS297A 16-Channel, 24-Bit 125kSPS crystal oscillator clock 16MHZ signal conditioning circuits of map sensor circuit diagram of 16-1 multiplexer diodes MSC12xx ADS1258 OPA227 QFN-48

    MLP832

    Abstract: ZXMP62M832 ZXMP62M832TA
    Text: ZXMP62M832 MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY P-Channel V BR DSS = -20V; RDS(ON) = 0.6 ; ID= -1.0A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure


    Original     		PDF ZXMP62M832 MLP832 ZXMP62M832 ZXMP62M832TA

    f17a

    Abstract: MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC
    Text: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63C02X f17a MO-187 ZXMD63C02X ZXMD63C02XTA ZXMD63C02XTC

    Untitled

    Abstract: No abstract text available
    Text: ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=20V; RDS(ON)=0.13⍀; ID=2.4A P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63C02X

    4422 mosfet

    Abstract: p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419
    Text: ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525G OT223 OT23-6 ZVN4525G OT223 4422 mosfet p-channel mosfet with diode sot89 MARKING TR SOT23-6 P MOSFET ZVN4525G ZVP4525G ZVP4525GTA ZVP4525GTC DSA0037419

    marking n52

    Abstract: marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking
    Text: ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525E6 OT23-6 OT223 ZVP4525E6 OT23-6 marking n52 marking N52 mosfet ZVN4525E6TA DSA0037389 ZVP4525E6 device marking N52 marking QG SOT23-6 MARKING TR SOT23-6 P MOSFET N52 marking sot223 device Marking

    marking n52

    Abstract: marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52
    Text: ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVN4525Z OT223 OT23-6 ZVP4525G marking n52 marking N52 mosfet ZVN4525ZTA MOSFET 4420 sot223 device Marking ZVN4525Z ZVP4525G DSA0037393 device marking N52

    MARKING TR SOT23-6 P MOSFET

    Abstract: marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA
    Text: ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525E6 OT23-6 OT223 ZVN4525E6 OT23-6 MARKING TR SOT23-6 P MOSFET marking p52 SOT23-6 marking ma sot23-6 marking QG SOT23-6 marking p52 mosfet MARKING NB SOT23-6 4422 mosfet ZVN4525E6 ZVP4525E6 ZVP4525TA

    marking p52 mosfet

    Abstract: p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423
    Text: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced


    Original     		PDF ZVP4525Z OT223 OT23-6 ZVN4525Z marking p52 mosfet p52 sot89 p-channel 250V power mosfet c 103 mosfet MARKING TR SOT23-6 P MOSFET ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC DSA0037423

    simple circuit diagram of electronic choke low cost

    Abstract: dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16
    Text: ZXRD1000 SERIES  PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple


    Original     		PDF ZXRD1000 synchrono611 D-81673 simple circuit diagram of electronic choke low cost dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16

    IRC 0805

    Abstract: N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors
    Text: ZXRD1000 SERIES  PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple


    Original     		PDF ZXRD1000 D-81673 IRC 0805 N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors

    sanyo OS-CON

    Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
    Text: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC  PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple


    Original     		PDF ZXRD1000 dr100 sanyo OS-CON B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    ZXMHC6A07T8

    Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 2.5A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425⍀; ID= -2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure


    Original     		PDF ZXMHC6A07T8 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC

    sanyo oscon

    Abstract: sanyo os-con 0805ZC105MAT1A CT1300 5aSOT23
    Text: ZXRD1000 SERIES  PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC Low Cost DESCRIPTION ZXRD1000 series can be used with all N channel devices or a combination of N & P channel devices. Additional functionality includes shutdown control, a user adjustable low battery flag and simple


    Original     		PDF ZXRD1000 sanyo oscon sanyo os-con 0805ZC105MAT1A CT1300 5aSOT23

    IC 751 1124

    Abstract: CS1124 CS1124YD8 CS1124YDR8
    Text: CS1124 Dual Variable-Reluctance Sensor Interface IC The CS1124 is a monolithic integrated circuit designed primarily to condition signals used to monitor rotating parts. The CS1124 is a dual channel device. Each channel interfaces to a Variable Reluctance Sensor, and monitors the signal produced when a


    Original     		PDF CS1124 CS1124 r14525 CS1124/D IC 751 1124 CS1124YD8 CS1124YDR8