2SC3243
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage
|
Original
|
O-92MOD
2SC3243
O-92MOD
100mA
500mA,
2SC3243
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
O-252
2SD1899
|
PDF
|
2SC2236
Abstract: transistor 2sC2236 2SA966
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
O-92L
O-92L
2SC2236
2SA966
500mA
2SC2236
transistor 2sC2236
|
PDF
|
bc639
Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
BC635/637/639
BC635
BC637
BC639
bc639
BC635
BC637
transistor bc635
bc635 datasheet
transistor BC639
BC639-16
BC639-10
transistor 639
|
PDF
|
3CA1837
Abstract: 3DA4793
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE
|
Original
|
O-220F
3DA4793
3CA1837
100mA
500mA,
3CA1837
3DA4793
|
PDF
|
MBR10100CT
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10100CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES • Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency
|
Original
|
O-220
MBR10100CT
O-220
MBR10100CT
|
PDF
|
2SD2470
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value
|
Original
|
O-92S
2SD2470
100MHz
2SD2470
|
PDF
|
s9013 transistor
Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
OT-23
S9013
S9012
500mA
500mA,
30MHz
s9013 transistor
J3 s9013
S9013 SOT-23
transistor S9013
S9013
data sheet transistor s9013
MARKING J3 SOT-23
S9012
J3 SOT23
marking J3
|
PDF
|
2SA940
Abstract: 2SC2703
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SA940 TRANSISTOR PNP TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SC2703 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
O-220
2SA940
O-220
2SC2703
-100A,
-120V,
-50mA
2SA940
2SC2703
|
PDF
|
transistor 649A
Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
O-126
2SB649/2SB649A
2SD669/A
2SB649
2SB649A
-160V
-10mA
-150mA
transistor 649A
649A
transistor 2sb649
2SB649
2SB649A
TO 126 FEATURES
JIANGSU CHANGJIANG TO-126
|
PDF
|
2SB1197K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
|
Original
|
OT-23-3L
OT-23-3L
2SB1197K
-100mA
-50mA
-50mA,
100MHz
2SB1197K
|
PDF
|
TRANSISTOR bd436
Abstract: BD436 BD434
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434,436 TRANSISTOR PNP TO-126 FEATURES Amplifier and switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter
|
Original
|
O-126
BD434
O-126
BD434
BD436
-10mA
TRANSISTOR bd436
BD436
|
PDF
|
br b772
Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
|
Original
|
O-126
O-126
-10mA
-100A
10MHz
br b772
TRANSISTOR b772
B772
TRANSISTOR br b772
b772 transistor
B772 datasheet
B772 equivalent
B772 PNP
transistors b772
b772 to 126
|
PDF
|
bt136 triac
Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,
|
Original
|
O-220
BT136
O-220
PAK/TO-220
100mA
BT136
bt136 triac
TRIAC bt136
Thyristor BT136
BT136 motor
equivalent for TRIAC BT136
bt136triac
Thyristor to220
triac to-220
|
PDF
|
|
|
DIODE A7
Abstract: A7 diode marking A7 diode free diode marking a7 a7 surface mount diode A7 marking diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4448CLLD03 - WBFBP-03D SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. ANODE 3. CATHODE FEATURES Fast Switching Speed
|
Original
|
WBFBP-03D
DK4448CLLD03
WBFBP-03D
volt00
100mA
150mA
DIODE A7
A7 diode
marking A7 diode
free diode
marking a7
a7 surface mount diode
A7 marking diode
|
PDF
|
transistor equivalent book
Abstract: transistor ic equivalent book TSA114ENND03 marking 14
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114ENND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an
|
Original
|
WBFBP-03B
TSA114ENND03
WBFBP-03B
-100A
-10mA/-0
100MHz
transistor equivalent book
transistor ic equivalent book
TSA114ENND03
marking 14
|
PDF
|
SOT523
Abstract: SOT-523
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BZX84C2V4T-BZX84C39T ZENER DIODE FEATURES： ∙ 150mW power dissipation rating. Maximum Ratings @TA=25℃ unless otherwise specified SOT-523 Electrical Characteristics @ TA= 25°C unless otherwise specified
|
Original
|
OT-523
BZX84C2V4T-BZX84C39T
150mW
BZX84C2V4T-BZX84C39T
SOT523
SOT-523
|
PDF
|
1220A TRANSISTOR
Abstract: KSA1220 equivalent transistor KSC2690A KSA1220A ksc2690
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSA1220/1220A TRANSISTOR PNP TO-126 FEATURES • Audio frequency power amplifier · High frequency power amplifier · Complement to KSC2690/KSC2690A 1. EMITTER 2. COLLECTOR
|
Original
|
O-126
KSA1220/1220A
O-126
KSC2690/KSC2690A
KSA1220
KSA1220A
-120V,
-300mA
1220A TRANSISTOR
KSA1220
equivalent transistor KSC2690A
KSA1220A
ksc2690
|
PDF
|
2SA934
Abstract: 2SA934 transistor 2sc2060
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934
|
Original
|
O-92L
O-92L
2SC2060
500mA)
2SA934
100mA
-50mA
2SA934
2SA934 transistor
|
PDF
|
SOT R23
Abstract: marking R24 2SC3356 SOT R25 r25 q
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR
|
Original
|
OT-23-3L
OT-23-3L
2SC3356
width350s,
SOT R23
marking R24
2SC3356
SOT R25
r25 q
|
PDF
|
2SC2412
Abstract: marking FQ 2SA1037 transistor marking fq
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
2SA1037
OT-23
2SC2412
-50mA
30MHz
2SC2412
marking FQ
2SA1037
transistor marking fq
|
PDF
|
transistor S9014
Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR
|
Original
|
S9014
S9015
100mA,
30MHz
transistor S9014
s9014
s9014 equivalent
transistor -s9014
s9014 transistor
transistor TO-92 S9015
S9014 TO92
S9015
|
PDF
|
transistor 2n3904
Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is
|
Original
|
2N3906
2N3904
OT-23
MMBT3906
-10mA
-50mA
-100mA
-50mA,
transistor 2n3904
transistor 2N3906
2N3906 TRANSISTOR
2N3906 PNP transistor
2n3906 TRANSISTOR pnp
2n3906 PNP transistor DC current gain
PNP switching transistor 2N3906 mhz
2n3906 equivalent transistor
|
PDF
|
SD106WS
Abstract: marking TC SOD-323
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SCHOTTKY DIODES SOD-323 + FEATURES • Low turn-on voltage • Fast switching • Microminiature plastic package • This device is protected by a PN junction guard ring
|
Original
|
OD-323
SD106WS
OD-323
100uA
100mA
200mA
SD106WS
marking TC SOD-323
|
PDF
|