T0T7250
Abstract: FS1N
Text: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables
|
OCR Scan
|
PDF
|
TCD6162AU
TC6162AU
TCH72S0
Q051S44
QFP44-P-1010A
T0T7250
FS1N
|
AD2033
Abstract: No abstract text available
Text: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.
|
OCR Scan
|
PDF
|
TLP795G
TLP795G)
TLP795G
150mA
5000Vrm
AD2033
|
P161j
Abstract: No abstract text available
Text: TLP161J GaAs IRED & PHOTO-TRIAC TIP161J TRIAC DRIVE U n it in m m PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY T he TOSHIBA M INI FLAT COUPLER T L P161J is a sm all outline coupler, suitable for surface m ount assem bly. The T LP161J consists of a photo triac, optically coupled to a gallium
|
OCR Scan
|
PDF
|
TLP161J
TIP161J)
P161J
LP161J
2500Vrm
UL1577,
E67349
11-4C3
CH725
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TLRD262 LED Lamp Unit in mm GaAIAs Red Light Emission Panel Circuit Indicator p Z J j± a 2 Tl rb 3mm Diameter T1-3/4 • G aA IA s Red L E D • All Plastic Mold Type • Colorless Transparent Lens • Low Drive Current, High Intensity Red Light Em ission
|
OCR Scan
|
PDF
|
TLRD262
D17ESD
CH7250
|
Untitled
Abstract: No abstract text available
Text: YoSHÎBÂTCDÎSCRETE/0PT0ï 9097250 TOSHIBA » F | ci m ? E S D <DISCRETE/OPTO ' 5 6 C 07 7T 5 0D0773S " 0 yC 5 3 3-/3 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS.
|
OCR Scan
|
PDF
|
0D0773S
0250M
|
2SK1913
Abstract: transister 2SK191
Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance
|
OCR Scan
|
PDF
|
2SK1913
100mA
20kii)
2SK1913
transister
2SK191
|
Untitled
Abstract: No abstract text available
Text: TIM1414-15 FEATURES : • H IG H PO W ER ■ B R O A D B A ND IN TERNA LLY M A T C H E D ■ H ER M ETIC A LLY SEALED PACKAGE P1dB = 42.0 dBm at 14.0 G H z to 14.5 GHz ■ H IG H G AIN G 1dB = 6.0 dB at 14.0 G H z to 14.5 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25°C
|
OCR Scan
|
PDF
|
TIM1414-15
|