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    CH725 Search Results

    CH725 Datasheets (228)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CH725A105JA30A0 AVX SMPS Capacitor Original PDF
    CH725A105JA30A4 AVX SMPS Capacitor Original PDF
    CH725A105JA30A7 AVX SMPS Capacitor Original PDF
    CH725A105JA30A8 AVX SMPS Capacitor Original PDF
    CH725A105JA80A0 AVX SMPS Capacitor Original PDF
    CH725A105JA80A7 AVX SMPS Capacitor Original PDF
    CH725A105JA80A8 AVX SMPS Capacitor Original PDF
    CH725A105KA30A0 AVX SMPS Capacitor Original PDF
    CH725A105KA30A4 AVX SMPS Capacitor Original PDF
    CH725A105KA30A7 AVX SMPS Capacitor Original PDF
    CH725A105KA30A8 AVX SMPS Capacitor Original PDF
    CH725A105KA80A0 AVX SMPS Capacitor Original PDF
    CH725A105KA80A4 AVX SMPS Capacitor Original PDF
    CH725A105KA80A7 AVX SMPS Capacitor Original PDF
    CH725A105KA80A8 AVX SMPS Capacitor Original PDF
    CH725A105MA30A4 AVX SMPS Capacitor Original PDF
    CH725A105MA30A7 AVX SMPS Capacitor Original PDF
    CH725A105MA30A8 AVX SMPS Capacitor Original PDF
    CH725A105MA80A0 AVX SMPS Capacitor Original PDF
    CH725A105MA80A4 AVX SMPS Capacitor Original PDF
    ...

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    T0T7250

    Abstract: FS1N
    Text: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables


    OCR Scan     		PDF TCD6162AU TC6162AU TCH72S0 Q051S44 QFP44-P-1010A T0T7250 FS1N

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-30L TIM7785-30L MW51140196 DD22b3D

    74HC Logic Package Information

    Abstract: MS-012AA 5V88
    Text: Philips Semiconductors Objective specification Programmable ripple counter with oscillator; 3-State 74HC/HCT9323A FEATURES DESCRIPTION • 8-pin space saving package The 74HC/HCT9323A are high-speed Si-gate CMOS devices. They are specified in compliance with JEDEC standard no. 7A.


    OCR Scan     		PDF 85MHz 74NIT OT96-1 076E03S MS-012AA 1995Oct27 711Dfl2t 74HC Logic Package Information MS-012AA 5V88

    AD2033

    Abstract: No abstract text available
    Text: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.


    OCR Scan     		PDF TLP795G TLP795G) TLP795G 150mA 5000Vrm AD2033

    P161j

    Abstract: No abstract text available
    Text: TLP161J GaAs IRED & PHOTO-TRIAC TIP161J TRIAC DRIVE U n it in m m PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY T he TOSHIBA M INI FLAT COUPLER T L P161J is a sm all outline coupler, suitable for surface m ount assem bly. The T LP161J consists of a photo triac, optically coupled to a gallium


    OCR Scan     		PDF TLP161J TIP161J) P161J LP161J 2500Vrm UL1577, E67349 11-4C3 CH725

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLRD262 LED Lamp Unit in mm GaAIAs Red Light Emission Panel Circuit Indicator p Z J j± a 2 Tl rb 3mm Diameter T1-3/4 • G aA IA s Red L E D • All Plastic Mold Type • Colorless Transparent Lens • Low Drive Current, High Intensity Red Light Em ission


    OCR Scan     		PDF TLRD262 D17ESD CH7250

    Untitled

    Abstract: No abstract text available
    Text: YoSHÎBÂTCDÎSCRETE/0PT0ï 9097250 TOSHIBA » F | ci m ? E S D <DISCRETE/OPTO ' 5 6 C 07 7T 5 0D0773S " 0 yC 5 3 3-/3 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm HIGH POWER AMPLIFIER APPLICATIONS.


    OCR Scan     		PDF 0D0773S 0250M

    2SK1913

    Abstract: transister 2SK191
    Text: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in m m Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications F eatures • Low Drain-Source ON Resistance ' r d s (ON) = 0.9Q (Typ.) • High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1913 100mA 20kii) 2SK1913 transister 2SK191

    Untitled

    Abstract: No abstract text available
    Text: TIM1414-15 FEATURES : • H IG H PO W ER ■ B R O A D B A ND IN TERNA LLY M A T C H E D ■ H ER M ETIC A LLY SEALED PACKAGE P1dB = 42.0 dBm at 14.0 G H z to 14.5 GHz ■ H IG H G AIN G 1dB = 6.0 dB at 14.0 G H z to 14.5 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25°C


    OCR Scan     		PDF TIM1414-15