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    CGHV22 Search Results

    CGHV22 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV22100F Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162 Original PDF
    CGHV22100-TB Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 6A 2.2GHZ 440162 Original PDF
    CGHV22200F Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162 Original PDF
    CGHV22200-TB Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22300MP 300 W, 1800 -2200 MHz, GaN HEMT for LTE Cree’s CGHV22300MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22300MP ideal for


    Original     		PDF CGHV22300MP CGHV22300MP CGHV22

    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22150MP 150 W, 1800-2200 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV22150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22150MP ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22150MP CGHV22150MP CGHV22

    CGHV22200

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions

    idq10

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10

    Untitled

    Abstract: No abstract text available
    Text: CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 - 2.2 GHz


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P

    HEADER RT

    Abstract: CGH35120
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P CGHV22100-TB HEADER RT CGH35120

    CGHV22100

    Abstract: CGH35120 CGHV22 cree rf
    Text: PRELIMINARY CGHV22100 100 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22100 CGHV22100 CGHV22 GHV22100P CGHV22100-TB CGH35120 cree rf