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    CGHV1F025S Search Results

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    CGHV1F025S Price and Stock

    MACOM CGHV1F025S

    RF MOSFET HEMT 40V 12DFN
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    DigiKey CGHV1F025S Reel 250 250
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    CGHV1F025S Cut Tape 47 1
    • 1 $114.07
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    CGHV1F025S Digi-Reel 1
    • 1 $114.07
    • 10 $108.673
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    Mouser Electronics CGHV1F025S 225
    • 1 $114.01
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    Verical CGHV1F025S 40 1
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    Richardson RFPD CGHV1F025S 40 1
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    MACOM CGHV1F025S-AMP1

    DEMO HEMT TRANS AMP1 CGHV1F025S
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    DigiKey CGHV1F025S-AMP1 Bulk 1 1
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    Mouser Electronics CGHV1F025S-AMP1
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    Richardson RFPD CGHV1F025S-AMP1 1
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    MACOM CGHV1F025S-AMP4

    RF FRONT END REFERENCE DESIGNS
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    Richardson RFPD CGHV1F025S-AMP4 1
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    CGHV1F025S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV1F025S Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 12DFN Original PDF
    CGHV1F025S-AMP1 Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - DEMO HEMT TRANS AMP1 CGHV1F025S Original PDF

    CGHV1F025S Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S