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MACOM CGH60120D-GP4 RF MOSFET HEMT 28V DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH60120D-GP4	Tray	90		10	1 - 10 $205.975 100 $205.975 1000 $205.975 10000 $205.975	Buy Now
Mouser Electronics	CGH60120D-GP4		50			1 - 10 - 100 $205.92 1000 $205.92 10000 $205.92	Buy Now
Richardson RFPD	CGH60120D-GP4				10	1 - 10 $274.32 100 $274.32 1000 $274.32 10000 $274.32	Buy Now
MACOM CGH60120D-GP5 GaN FETs DIE, 120W, GaN HEMT, GP4, 510400, 28.8mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGH60120D-GP5					1 - 10 - 100 - 1000 $170.36 10000 $170.36	Get Quote

CGH6012 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH60120D-GP4		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE		Original	PDF

CGH6012 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
cgh60120D Abstract: No abstract text available Text: CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to PN: CGH6012 0D silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.	Original	PDF	CGH60120D CGH60120D CGH6012
cgh60120D Abstract: CGH6012 Text: CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties PN: CGH6012 0D compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal	Original	PDF	CGH60120D CGH60120D CGH6012
cgh60120D Abstract: 204C gan7 Text: APPLICATION NOTE Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Introduction The objective of this application note is to provide users of Cree wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. It explains	Original	PDF	APPNOTE-010 cgh60120D 204C gan7
CGH40025P Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors	Original	PDF