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    CGD10 Price and Stock

    eve GmbH CGD10

    econ connect Housing 2 x 5 pin p
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    NXP Semiconductors CGD1044,112

    IC AMP CATV SOT115J
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    NXP Semiconductors CGD1042,112

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    NXP Semiconductors CGD1042H,112

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    NXP Semiconductors CGD1044HI,112

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    CGD10 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGD1029 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    CGD1030 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    CGD1031 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    CGD1032 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    CGD1040Hi NXP Semiconductors Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks; NXP high-gain power doublers CGD104x and push-pulls CGY104x Original PDF
    CGD1040HI NXP Semiconductors 1 GHz, 20 dB gain GaAs high output power doubler Original PDF
    CGD1040HI NXP Semiconductors Product Qualification Package CGD1040HI Original PDF
    CGD1040HI,112 NXP Semiconductors CGD1040HI - 1 GHz, 20 dB gain GaAs high output power doubler, SOT115J Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    CGD1042 NXP Semiconductors Upgrade to sustainable 1 GHz CATV networks; NXP high-gain power doublers CGD104x Original PDF
    CGD1042 NXP Semiconductors NXP Cross Reference Original PDF
    CGD1042,112 NXP Semiconductors Linear - Amplifiers - Video Amps and Modules, Integrated Circuits (ICs), POWER DOUBLER 1GHZ SOT115 Original PDF
    CGD1042H NXP Semiconductors 1 GHz, 23 dB gain high output power doubler Original PDF
    CGD1042H NXP Semiconductors CGD1042 - RF/Microwave Frequency Multiplier, 40 MHz - 1000 MHz RF/MICROWAVE FREQUENCY DOUBLER, SOT-115J, 9 PIN Original PDF
    CGD1042H NXP Semiconductors Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks; NXP high-gain power doublers CGD104x and push-pulls CGY104x Original PDF
    CGD1042H NXP Semiconductors Upgrade to sustainable 1 GHz CATV networks; NXP high-gain power doublers CGD104x Original PDF
    CGD1042H NXP Semiconductors 1 GHz, 23 dB Gain high output power doubler Original PDF
    CGD1042H NXP Semiconductors NXP Cross Reference Original PDF
    CGD1042H,112 NXP Semiconductors 1 GHz, 23 dB gain high output power doubler; Package: SOT115; Container: Bulk Pack Original PDF
    CGD1042H,112 NXP Semiconductors CGD1042 - RF/Microwave Frequency Multiplier, 40 MHz - 1000 MHz RF/MICROWAVE FREQUENCY DOUBLER, SOT-115J, 9 PIN Original PDF
    CGD1042Hi NXP Semiconductors Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks; NXP high-gain power doublers CGD104x and push-pulls CGY104x Original PDF

    CGD10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGD1044H

    Abstract: No abstract text available
    Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1044H OT115J CGD1044H

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGD1042H 1 GHz, 23 dB Gain high output power doubler Rev. 01 — November 30, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1042H power doubler


    Original     		PDF CGD1042H CGD1042H CGD10

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGD1044Hi 1 GHz, 25dB gain GaAs high output power doubler Rev. 01 — December 27, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1044Hi power doubler


    Original     		PDF CGD1044Hi CGD1044Hi

    TRANSISTOR RF 1003

    Abstract: TRANSISTOR 1003 CGD1040HI
    Text: CGD1040HI 1 GHz, 20 dB gain GaAs high output power doubler Rev. 01 — 22 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1040HI OT115J 2002/95/EC, CGD1040HI TRANSISTOR RF 1003 TRANSISTOR 1003

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGD1042Hi 1 GHz, 22dB gain GaAs high output power doubler Rev. 01 — December 18, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1042Hi power doubler


    Original     		PDF CGD1042Hi CGD1042Hi

    Untitled

    Abstract: No abstract text available
    Text: CGD1044HI 1 GHz, 25 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1044HI OT115J 2002/95/EC,

    CGD1044H

    Abstract: No abstract text available
    Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1044H OT115J CGD1044H

    CGD1042HI

    Abstract: No abstract text available
    Text: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042HI OT115J 2002/95/EC, CGD1042HI

    CGD1046HI

    Abstract: No abstract text available
    Text: CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 — 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1046HI OT115J 2002/95/EC, CGD1046HI

    CGD1042H

    Abstract: BV 1 150
    Text: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 3 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042H OT115J CGD1042H BV 1 150

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGD1044H 1 GHz, 25 dB Gain high output power doubler Rev. 01 — January 8, 2010 Product Qualification Package CGD1044H NXP Semiconductors Revision history Rev Date Description 01 20100108 Initial Release Contact information For additional information, please visit: http://www.nxp.com


    Original     		PDF CGD1044H CGD1044H

    CGY1047

    Abstract: CGD1042 CGD1044 CGD104xH CGD1042H CGD1044H CGY1041 CGY1043
    Text: NXP high-gain power doublers CGD104x Upgrade to sustainable 1 GHz CATV networks NXP offers a choice of standard and high-output power doublers for 1 GHz CATV applications. These high performance GaAs devices make it easy for cable operators to extend their services


    Original     		PDF CGD104x CGD104xH) bra822 CGD1042 CGD1044 CGY1047 CGD104xH CGD1042H CGD1044H CGY1041 CGY1043

    Untitled

    Abstract: No abstract text available
    Text: CGD1044HI 1 GHz, 25 dB gain GaAs high output power doubler Rev. 01 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1044HI OT115J 2002/95/EC, CGD1044HI

    CGD1042HI

    Abstract: No abstract text available
    Text: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 01 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042HI OT115J 2002/95/EC, CGD1042HI

    TRANSISTOR 1003

    Abstract: CGD1042HI
    Text: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042HI OT115J 2002/95/EC, TRANSISTOR 1003 CGD1042HI

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGD1040Hi 1 GHz, 20dB gain GaAs high output power doubler Rev. 01 — December 11, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1040Hi power doubler


    Original     		PDF CGD1040Hi CGD1040Hi

    CGD1042H

    Abstract: No abstract text available
    Text: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042H OT115J CGD1042H

    Untitled

    Abstract: No abstract text available
    Text: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042L OT115AE 2002/95/EC,

    CGD1044H

    Abstract: No abstract text available
    Text: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 01 — 10 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1044H OT115J CGD1044H

    CGD1042H

    Abstract: No abstract text available
    Text: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.


    Original     		PDF CGD1042H OT115J CGD1042H

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LPC2148 i2c

    Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
    Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.


    Original     		PDF OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent

    Untitled

    Abstract: No abstract text available
    Text: Product Qualification Package CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 02 — December 29, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGY888C push pull CATV


    Original     		PDF CGY888C CGY888C