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    CFY TRANSISTOR Search Results

    CFY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CFY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35

    Untitled

    Abstract: No abstract text available
    Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    Original     		PDF OT-143 Q62703-F97 P-SOT143-4-1 GPS05559

    transistor s2p

    Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35 transistor s2p design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10

    GaAs FET cfy 14

    Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
    Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    Original     		PDF OT-143 Q62703-F97 P-SOT143-4-1 GPS05559 GaAs FET cfy 14 marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19

    MARKING A2

    Abstract: smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor
    Text: GaAs FET CFY 30 Data Sheet • • • • • • • Low noise Fmin = 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation


    Original     		PDF OT-143 Q62703-F97 P-SOT-143-4-1 GPS05559 MARKING A2 smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


    Original     		PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    2520P

    Abstract: schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11.4.1 Table 2 HiRel Silicon Diodes General Purpose Silicon Schottky Diodes Tj,max = 150 °C Max. Ratings Component type variant BAS 40-T1 VR IF Characteristics VBR VF Package RF CD Detail Spec. Type Variant


    Original     		PDF 40-T1 70-T1 70B-HP HPAC140 2520P schottky diode 43t BFY193 5613 CFY 19 CFY 18 micro-x 420

    cf sot-363

    Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
    Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-363 SCT-598 cf sot-363 GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18

    MMIC Amplifier Micro-X marking 420

    Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
    Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices


    Original     		PDF EHA07485 EHA07486 MWP-25 EHA07487 EHA07488 MWP-35 EHA07489 EHA07490 MMIC Amplifier Micro-X marking 420 x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"

    GaAs pHEMT LOW SOT-343

    Abstract: CLY 2
    Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF OT-363 VQFN-16-2 SCT-598 GaAs pHEMT LOW SOT-343 CLY 2

    727 diode

    Abstract: 716 transistor diode 716 BFY 34 transistor
    Text: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716


    Original     		PDF HPAC140, MWP-25, MWP-35 727 diode 716 transistor diode 716 BFY 34 transistor

    cfy 14 siemens

    Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
    Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5


    OCR Scan     		PDF fl23SbDS cfy 14 siemens CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23

    NF 847 G

    Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
    Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W


    OCR Scan     		PDF 858/W 857/W IQ62702-C1847 Q62702-C954 62702-C1884 Q62702-C1850 Q62702-C1742 Q62702-F1393 Q62702-F1394 Q62703-F97 NF 847 G NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X

    CLY 30

    Abstract: cfy siemens CLYS MW-6 cly5
    Text: Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Type Maximum Ratings Characteristics TA = 25 °C Package Lead Code V J'bs J'gs V h mA Aot mW 8m mS F dB CFY 77-08 3.5 2 60 180 65 0.7 10.5 12 MW-4 3 CFY 77-10 3.5 2 60 180 65 0.9 10 12 MW-4 3 :


    OCR Scan     		PDF OT-223 fiE3Sb05 CLY 30 cfy siemens CLYS MW-6 cly5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


    OCR Scan     		PDF 023SbOS CGY50 OT-143 CGY40 CLY10 CGY52

    CFY19-22

    Abstract: CFY19 Dual-Gate* bf981 bf987
    Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '


    OCR Scan     		PDF BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987

    gaas fet micro-X Package marking

    Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
    Text: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and


    OCR Scan     		PDF

    BF963

    Abstract: BF544 BF930 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5
    Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors M axim um Ratings Characteristics T.=25°C NF mW G ps dB dB 40 50 30 30 30 30 30 10 10 200 200 200 200 200 200 200 200 200 29 25


    OCR Scan     		PDF BF930 BF993 BF994S BF995 BF996S BF997 BF998 BF1005 BF1012 BF543 BF963 BF544 BF987 triode sot23 gaasfets cLY2 BF965 CFY30 cly5

    HF-transistoren

    Abstract: No abstract text available
    Text: Transistoren Transistors HF-Transistoren und MMICs MOS Feldeffekt-Transistoren RF-Transistors and MMICs MOS Field-Effect Transistors Type Maximum Ratings Characteristics TA = 25 °C ^DS V Gps dB Fat dB Id mA Aot mW Vqs V Id mA / MHz gts mS Package Lead Code


    OCR Scan     		PDF OT-143 23SbGS HF-transistoren

    P-SOT-143

    Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
    Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1


    OCR Scan     		PDF CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking

    transistor BC 245

    Abstract: transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor
    Text: Summary of Types SIEMENS ICs for Satellite Receivers Page Type Function TDA 6130-5X4 2-GHz Mixer 22 TDA 6140-5X TV SAT IF-FM-Demodulator 30 TDA 6142-5X FM-Demodulator for SAT TV with Switchable Input 38 TDA 6151 -5;5X Satellite-Video IC 48 TDA 6160-2S Multistandard Sound IF


    OCR Scan     		PDF 6130-5X4 6140-5X 6142-5X 6160-2S 6160-2X 6170X 6180X BCX51 transistor BC 245 transistor bc 241 transistor BC 56 transistor BF 245 transistor bc 33 BC 114 transistor transistor bf 179 transistor BC-245 TRANSISTOR BC 181 bc 162 transistor

    727 diode

    Abstract: diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY
    Text: G aAs Components Infineon •»ihnciogift* HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Component Types Package Types Title Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices


    OCR Scan     		PDF BFY180, HPAC140, MWP-25, MWP-35 CGY41 727 diode diode 716 transistor 717 TRANSISTOR 726 716 transistor cfy transistor 35 CFY

    N-Channel, Dual-Gate FET

    Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
    Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.


    OCR Scan     		PDF OT-363 OT-363 VQFN-16-2 SCT-598 N-Channel, Dual-Gate FET CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET

    BFT65

    Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
    Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions


    OCR Scan     		PDF