CF001
Abstract: CF001-01 CF001-02 CF001-03 S-11 celeritek ghz GaAs FET HEMT Chips
Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: U sable to 44 G H z J P id B P ° wer: to +19 dB m □ Active Layers Include: Pseudom orphic H EM T, E p itaxial and Ion Im planted W afer Q ualification Procedure
|
OCR Scan
|
PDF
|
CF001
CF001-01.
CF001-02
CF001-03
CF001-01
1174SD3
S-11
celeritek ghz
GaAs FET HEMT Chips
|
CF001-03
Abstract: CF001 GaAs FET HEMT Chips CF001-01 CF001-02 celeritek ghz CFB001
Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 GHz □ High Gain: Usable to 44 GHz □ P idB P°wer: U p t0 +19 dBm □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure
|
OCR Scan
|
PDF
|
CF001
CF001-01.
CF001-02
CF001-03
GaAs FET HEMT Chips
CF001-01
celeritek ghz
CFB001
|
Untitled
Abstract: No abstract text available
Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: Usable to 44 GHz □ ^ ld B P °wer: Up t0 +19 dBm J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure
|
OCR Scan
|
PDF
|
CF001
CF001
cons-107
|