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    Bel Fuse 0ZCF0030FF2C

    PTC RESET FUSE 60V 300MA 2920
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    DigiKey 0ZCF0030FF2C Reel 50,000 2,000
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    0ZCF0030FF2C Cut Tape 4,479 1
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    0ZCF0030FF2C Digi-Reel 1
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    Avnet Americas 0ZCF0030FF2C Ammo Pack 17 Weeks, 3 Days 1
    • 1 $0.312
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    0ZCF0030FF2C Reel 15 Weeks 2,000
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    Newark 0ZCF0030FF2C Cut Tape 373 1
    • 1 $0.312
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    0ZCF0030FF2C Reel 2,000
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    TME 0ZCF0030FF2C 3,721 5
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    Avnet Abacus 0ZCF0030FF2C Reel 2,000 20 Weeks 2,000
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    Avnet Asia 0ZCF0030FF2C 6,000 15 Weeks 6,000
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    Chip1Stop 0ZCF0030FF2C 14,000
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    0ZCF0030FF2C 27
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    IBS Electronics 0ZCF0030FF2C 16,000 6,173
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    Master Electronics 0ZCF0030FF2C 16,000
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    Sager 0ZCF0030FF2C 2,000 2,000
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    Swissbit SFCF0032H1BK1WI-I-MS-513-STD

    INDUSTRIAL COMPACT FLASH CARD, C
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    DigiKey SFCF0032H1BK1WI-I-MS-513-STD Tray 18 1
    • 1 $41.48
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    Mouser Electronics SFCF0032H1BK1WI-I-MS-513-STD 2
    • 1 $40.43
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    Newark SFCF0032H1BK1WI-I-MS-513-STD Bulk 1
    • 1 $40.45
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    Neutron USA SFCF0032H1BK1WI-I-MS-513-STD 20
    • 1 $90.67
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    Swissbit SFCF0032H1BK1WI-C-MS-513-STD

    INDUSTRIAL COMPACT FLASH CARD, C
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    DigiKey SFCF0032H1BK1WI-C-MS-513-STD Tray 5 1
    • 1 $39.99
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    Mouser Electronics SFCF0032H1BK1WI-C-MS-513-STD
    • 1 $38.92
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    Newark SFCF0032H1BK1WI-C-MS-513-STD Bulk 1
    • 1 $38.89
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    Belden Inc 0ZCF0030FF2C

    Resettable Fuses - PPTC
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    Mouser Electronics 0ZCF0030FF2C 19,884
    • 1 $0.3
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    Essentra Components CF003A

    Spiral Wraps, Sleeves, Tubing & Conduit FLEXIBLE CONDUIT:HDPE GRAY, 0.437 NOM DIA CONDUIT:328FT/ROLL
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    Mouser Electronics CF003A
    • 1 $159.28
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    Newark CF003A SPOOL 1
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    CF003A Bulk 1
    • 1 $184.42
    • 10 $171.31
    • 100 $148.84
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    RS CF003A ft. Coil 17 Weeks 1
    • 1 $160.87
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    Onlinecomponents.com CF003A
    • 1 $153.85
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    Find more CF003 price and stock on Findchips.com

    CF003 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CF003 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF003 Unknown CF003 SERIES GaAs PSEUDOMORPHIC HEMT AND MESFET CHIPS Scan PDF
    CF003-01 Mimix Broadband Broadband Power GaAs MESFET Chips Original PDF
    CF003-01 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-01 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-01 Celeritek Broadband Power GaAs MESFET Chip Scan PDF
    CF003-01 Celeritek 1.8 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF
    CF003-02 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF003-02 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-02 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-02 Celeritek 1.4 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF
    CF003-03 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF003-03 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-03 Celeritek GaAs FETs and MMICs Scan PDF
    CF003-03 Celeritek 1.0 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF

    CF003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pseudomorphic HEMT

    Abstract: CF003-03 Hemt transistor
    Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,


    Original     		PDF 19-Jul-08 CF003-03 CF003-03 CF003-03-000X pseudomorphic HEMT Hemt transistor

    Untitled

    Abstract: No abstract text available
    Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,


    Original     		PDF 19-Jul-08 CF003-03 CF003-03 for-000X

    RG58CU

    Abstract: CBBR0441
    Text: RG58CU 50 Ohm Coaxial Cables Type Coaxial cable RG-58C/U Code CF0032N/BK Description 19/0.19TC +16/7/0.12mm TC (Braid) Φ5.0mm Conductor 19/0.19 ±0.003mm TC Stranding Direction : Right / Maximum distance 40mm / Nominal outer diameter 0.96mm PE Dielectric


    Original     		PDF RG58CU RG-58C/U) CF0032N/BK 003mm CBBR0441

    CFA0301-A

    Abstract: CF003-01 CFB0301-B CFB0301
    Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon


    Original     		PDF CF003-01 15-Jul-08 CF003-01 CF003-01-000X CFA0301-A CFB0301-B CFB0301

    CF003

    Abstract: hemt
    Text: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF003 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.


    Original     		PDF 03-Aug-06 CF003 hemt

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series g„a @p™ˆ›‡•“•˜–‹Œ†@hemt@„”‡@mesfet@c‹Œ–™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“


    Original     		PDF CF003

    c200h-OC226N

    Abstract: CS1D-PA207R omron oc222 omron oc225 english omron OD231 yaskawa servo driver omron oc225 OMRON BF 302 C200H-AD002 OMRON Operation Manual Rotary Encoder OS 104 mitsubishi
    Text: Y201-EN2-03.book Seite 247 Donnerstag, 30. März 2006 1:52 13 Programmable Controllers Rack PLCs CS1 Series Introduction Lineup CPU Units Power Supplies Basic System Configuration Duplex System Configuration Programming Dimensions I/O allocations Current consumption


    Original     		PDF Y201-EN2-03 C200H-DIN01 PFP-50N PFP-100N PFP-100N2 P08E-EN-03A c200h-OC226N CS1D-PA207R omron oc222 omron oc225 english omron OD231 yaskawa servo driver omron oc225 OMRON BF 302 C200H-AD002 OMRON Operation Manual Rotary Encoder OS 104 mitsubishi

    CFS0303-SB-0G0T

    Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
    Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA


    Original     		PDF 23-May-06 CFS0303-SB OT-343) 2400MHz 3500MHz CFS0303-SB-0G0T TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473

    TRANSISTOR BD 137-10

    Abstract: No abstract text available
    Text: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz


    Original     		PDF CFS0303-SB OT-343) TRANSISTOR BD 137-10

    h3ba omron timer

    Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
    Text: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator


    Original     		PDF Z901-E1-05 NE1S-CPU01 847-843-7900/Fax: NE1S-CPU01 h3ba omron timer omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a

    Untitled

    Abstract: No abstract text available
    Text: 10 October 2012 Specification for monolithic crystal filter: MQF 21.4-2500 /07 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original     		PDF CF003

    APPLE A6 CHIP

    Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
    Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6


    Original     		PDF RF420 CF414 1/16W RF424 APPLE A6 CHIP cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342

    Untitled

    Abstract: No abstract text available
    Text: 21 March 2006 Specification for monolithic crystal filter MQF 70.0-0800/08 1. General 1.1. Case: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-0800/08 6, 3 rd overtone -40°C to +80°C -55°C to +90°C


    Original     		PDF CF003

    15165

    Abstract: TRANSISTOR BD 137-10 CF003-03 CFS0303-SB CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0 2304 sot 353
    Text: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package September 2007 - Rev 28-Sep-07 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA


    Original     		PDF 28-Sep-07 CFS0303-SB OT-343) 2400MHz 3500MHz 15165 TRANSISTOR BD 137-10 CF003-03 CFS0303-SB CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0 2304 sot 353

    Untitled

    Abstract: No abstract text available
    Text: 10 October 2012 Specification for monolithic crystal filter: MQF 21.4-2500 /07 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original     		PDF input40Â CF003

    Untitled

    Abstract: No abstract text available
    Text: 21 March 2006 Specification for monolithic crystal filter MQF 70.0-0800/08 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-0800/08 6 -40°C to +80°C -55°C to +90°C


    Original     		PDF CF003

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


    OCR Scan     		PDF CF003 CF003-03 CF003 CF003-01 n745D3

    RSY-5

    Abstract: CF005-01 celeritek CF003-01 CF010-01 celeritek ghz a32g 3620q
    Text: Broadband Power GaAs MESFET Chips □ PjdB P°wer: A CF003-01: +22 dBm CF005-01: +25 dBm CF010-01: +28 dBm □ High Gain @ 12 GHz : CF003-01: 9.0 dB CF005-01: 8.5 dB CF010-01: 8.0 dB “ A A □ Broadband: Usable to 18 GHz □ Wafer Qualification Procedure


    OCR Scan     		PDF CF003-01: CF005-01: CF010-01: CF003-01, CF005-01 CF010-01 CF003-01 RSY-5 celeritek celeritek ghz a32g 3620q

    CF005-01

    Abstract: 117450 CF003-01 CF010-01 a32g
    Text: Broadband Power GaAs Chips Specifications T^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted A c tiv e Layer Symbol G|_ p1dB Frequency (GHz) Units Linear Power Gain V q s = 6-0 V, iQg = 80 mA V q s = 6-0 Iqq = 160 mA V q s = 6.0 V, Iq 5 = 300 mA


    OCR Scan     		PDF CF003-01 CF005-01 CF010-01 160mA 300mA 117450 CF010-01 a32g

    Untitled

    Abstract: No abstract text available
    Text: Broadband Power GaAs Chips Specifications T ^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted Active Layer Frequency (GHz) Units Linear Power Gain Vqs = 6.0 V, Iq 3 = 80 mA Vqs = 6-0 V, Iqs = 160 mA VDS = 6.0 V, lDS = 300 mA


    OCR Scan     		PDF CF003-01 CF005-01 CF010-01 mA00mA DD0D712

    CF003

    Abstract: CF003-01 CF003-02 CF003-03 CFC003
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PjdB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


    OCR Scan     		PDF CF003 CF003-01, CF003-02 CF003-03 CF003-01 CFC003

    CFC003

    Abstract: celeritek CF003 CF003-01 CF003-02 CF003-03 MS03 celeritek ghz
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PldB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


    OCR Scan     		PDF CF003 CF003-01, CF003-02 CF003-03 CF003-01 CF003-03 CFC003 celeritek MS03 celeritek ghz

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips J Low Noise Figure: 1.0 dB at 12 GHz Zi High Gain: l Od Ba t 12 GHz J P jdB P °wer: +-2 dBm at 12 GHz J Wide Dynamic Range J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted J Wafer Qualification Procedure


    OCR Scan     		PDF CF003 CF003-01 CF003-03

    PF412

    Abstract: SVM9300 PF446 PF245 PF382 PF833 PF336 PF556 PF544 SED9420C
    Text: SP -1 1 ASSP Documentation Graphics ICs LCD drivers Data sheet Part number D atasheet Manual Part number English Japanese English SEA6472F0A PF785 MF6S0 MF681 S P C 8O IIF 0A PF767 S P C 8O3OF0A PF768 S PC8104F PF765 Japanese MF802 MF801 MF891 Engfeh S E D 1 100 series


    OCR Scan     		PDF SEA6472F0A PC8104F SPC8107FOE PC8110 PF723 PF810 PF724 PF725 PF785 PF767 PF412 SVM9300 PF446 PF245 PF382 PF833 PF336 PF556 PF544 SED9420C