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Catalog Datasheet	MFG & Type	PDF	Document Tags
cep840b Abstract: TF-78 Text: CEP840B/CEB840B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 440V, 9A,RDS ON = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.	Original	PDF	CEP840B/CEB840B O-220 O-263 cep840b TF-78

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cep840b

Abstract: TF-78
Text: CEP840B/CEB840B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 440V, 9A,RDS ON = 0.76Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Original

PDF

CEP840B/CEB840B O-220 O-263 cep840b TF-78