cem8958a
Abstract: spf-90
Text: CEM8958A Dual Enhancement Mode Field Effect Transistor N and P Channel PRELIMINARY FEATURES 5 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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CEM8958A
cem8958a
spf-90
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CEM8958
Abstract: No abstract text available
Text: CEM8958 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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CEM8958
CEM8958
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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CEM8958
Abstract: No abstract text available
Text: mu CEM8958 PRELIMINARY Dual Enhancement Mode Field Effect Transistor^ and P Channel FEATURES • 3 0 V , 5 .3 A , Rds on)=35iti Q @Vgs=10V. Di R ds(on)=50iti Q @Vgs=4.5V. Di D2 D2 -30V, -4.0A , RDS(ON)=65m Q @Vgs=-10V. R ds(on)=100iti Q @Vgs=-4.5V. • Super high dense cell design for extremely low R d s (o n >.
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OCR Scan
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CEM8958
Power958
CEM8958
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