Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CEM8410 Search Results

    CEM8410 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEM8410 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM8410A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    CEM8410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEM8410

    Abstract: No abstract text available
    Text: CEM8410 March 1998 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 10A , RDS ON =15mΩ RDS(ON)=20mΩ @VGS=10V. @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		PDF CEM8410 CEM8410

    CEM8410

    Abstract: No abstract text available
    Text: CEM8410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 1 0 A , R d s o n = 1 5 m Q @ V gs= 1 0 V . RDS(ON)=20mi2 @ V g s = 4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		PDF CEM8410 20mi2 CEM8410

    CEM8410

    Abstract: CEM8410A
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 10 A , R d s o n =1 2m Q RDS(ON)=20m Q @ Vgs=1 0V. @Vgs=4.5V. • Super high dense cell design for extremely low Rds(on). • High power and current handing capability. • Surface Mount Package.


    OCR Scan     		PDF CEM8410A 12itiQ CEM8410 CEM8410A