Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

Contextual Info: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

bq4830Y

Abstract: BQ4830YMA-85
Contextual Info: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs

BQ4830YMA-85

Contextual Info: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs

bq4830Y

Abstract: BQ4830YMA-85
Contextual Info: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs

R-PDIP-T28

Contextual Info: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

Contextual Info: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

BD-961

Abstract: bq4850Y BQ4850YMA-85 BQ4850YMA-85N
Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

Contextual Info: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs

Contextual Info: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

BD-961

Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

Contextual Info: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time

Contextual Info: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with

bq4010

Abstract: bq4010LY bq4010Y DIP-28
Contextual Info: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED APRIL 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

bq4830Y

Abstract: BQ4830YMA-85
Contextual Info: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access

Contextual Info: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access

Contextual Info: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access

bq4011

Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N
Contextual Info: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

Contextual Info: bq4015/Y/LY www.ti.com SLUS125B – MAY 1999 – REVISED JANUARY 2010 512 k x 8 NONVOLATILE SRAM 5 V, 3.3 V Check for Samples: bq4015/Y/LY FEATURES 1 • • • • • • Data Retention for at least 10 Years Without Power Automatic Write-Protection During

Contextual Info: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

bq4011

Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70
Contextual Info: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles

bq4015

Abstract: bq4015MA-70 bq4015MA-85 bq4015Y bq4015YMA-70 bq4015YMA-85
Contextual Info: bq4015/Y/LY www.ti.com SLUS125A – MAY 1999 – REVISED MAY 2007 512 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles