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    CD4009CN

    Abstract: ci cd4009 CD4009 cd4009 B CD40xx CD4010CN CD4010C C1995 CD4009C CD4009M
    Text: CD4009M CD4009C Hex Buffers Inverting CD4010M CD4010C Hex Buffers (Non-Inverting) General Description Features These hex buffers are monolithic complementary MOS (CMOS) integrated circuits The N- and P-channel enhancement mode transistors provide a symmetrical circuit with


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    PDF CD4009M CD4009C CD4010M CD4010C CD4009CN ci cd4009 CD4009 cd4009 B CD40xx CD4010CN C1995

    cd4010

    Abstract: No abstract text available
    Text: CD4009M/CD4009C Hex Buffers Inverting CD4010M/CD4010C Hex Buffers (Non-Inverting) General Description Features These hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhance­ ment mode transistors provide a symmetrical circuit with


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    PDF CD4009M/CD4009C/CD4010M/CD4010C CD4009M/CD4009C CD4010M/CD4010C CD40XXM CD40XXC cd4010

    AM97C11CN

    Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
    Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits


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    CD4010

    Abstract: CD4009 ci cd4009 CD40xx DTL 999
    Text: CD4009M/CD4009C Hex Buffers Inverting CD4010M/CD4010C Hex Buffers (Non-Inverting) General Description Features These hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhance­ ment mode transistors provide a symmetrical circuit with


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    PDF CD4009M/CD4009C CD4010M/CD4010C volCD40XXM CD40XXC 07M3034 TL/F/5945-5 CD4010 CD4009 ci cd4009 CD40xx DTL 999

    CD40xx

    Abstract: CD4010 CD4009 CD4009CN CD4009MJ
    Text: February 1988 CD4009M/CD4009C Hex Buffers Inverting CD4010M/CD4010C Hex Buffers (Non-Inverting) Features • ■ ■ ■ Wide supply voltage range Low power High noise immunity High current sinking capability 3.0V to 15V 100 nW (typ.) 0.45 VDD (typ.) 8 mA (min.) at V o = 0.5V


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    PDF CD4009M/CD4009C CD4010M/CD4010C CD40xx CD4010 CD4009 CD4009CN CD4009MJ

    CD4010

    Abstract: No abstract text available
    Text: Semiconductor February 1988 CD4009M/CD4009C Hex Buffers Inverting CD4010M/CD4010C Hex Buffers (Non-Inverting) General Description Features These hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhance­ ment mode transistors provide a symmetrical circuit with


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    PDF CD4009M/CD4009C CD4010M/CD4010C CD4010

    CD4009CN

    Abstract: No abstract text available
    Text: CD4009M/CD4009C Hex Buffers Inverting CD4010M/CD4010C Hex Buffers (Non-Inverting) General Description Features These hex buffers are monolithic complementary MOS (CMOS) Integrated circuits. The N- and P-channel en­ hancement mode transistors provide a symmetrical cir­


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    PDF CD4009M/CD4009C, CD4010M/CD4010C CD4009M/CD4009C CD4010M/CD4010C 040XXM CD40XXC CD4009CN