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    CC8 TRANSISTOR Search Results

    CC8 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    CC8 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cc8 transistor

    Abstract: CMLDM8005
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    PDF CMLDM8005 350mW OT-563 CMLDM7005 200mA cc8 transistor

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    PDF CMLDM8005 350mW OT-563 200mA 200mA,

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    PDF CMLDM8005 350mW OT-563 200mA 200mA,

    CMLDM8005

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    PDF CMLDM8005 350mW OT-563 CMLDM7005 200mA

    Untitled

    Abstract: No abstract text available
    Text: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier


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    PDF CMLDM8005 350mW OT-563 200mA 200mA,

    Inside Secure

    Abstract: smart card reader writer
    Text: TPR0508A Technical Datasheet AT83C26 Multiple Smart Card Reader Interface With Power Management 2 TPR0508A – VIC – 25Mar11 AT83C26 Table of Contents 1 Features .5


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    PDF TPR0508A AT83C26 25Mar11 Inside Secure smart card reader writer

    AT83C26-RKTUL

    Abstract: AT83C26 CKS41 AT83C24 CKS40 EMV2000 QFN48 VQFP48 automatic room power controller using scr SC527
    Text: Features • 5 Smart Card Interfaces • • • • • • • • – Compliance with ISO 7816, EMV2000, GIE-CB and GSM Standards – Direct Connection to the Smart Cards Logic Level Shifters Short Circuit Current Limitation 4kV+ ESD Protection MIL/STD 883 Class 3


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    PDF EMV2000, 7511B AT83C26-RKTUL AT83C26 CKS41 AT83C24 CKS40 EMV2000 QFN48 VQFP48 automatic room power controller using scr SC527

    cardin2

    Abstract: cds21 CKS30 AT83C26 Application Note
    Text: Features • 5 Smart Card Interfaces • • • • • • • • – Compliance with ISO 7816, EMV2000, GIE-CB and GSM Standards – Direct Connection to the Smart Cards Logic Level Shifters Short Circuit Current Limitation 4kV+ ESD Protection MIL/STD 883 Class 3


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    PDF EMV2000, 7511C cardin2 cds21 CKS30 AT83C26 Application Note

    AT83C26-RKTUL

    Abstract: AT83C26 AT83C26 Application Note EMV2000 QFN48 VQFP48 cardin2 CDS12
    Text: Features • 5 Smart Card Interfaces • • • • • • • • – Compliance with ISO 7816, EMV2000, GIE-CB and GSM Standards – Direct Connection to the Smart Cards Logic Level Shifters Short Circuit Current Limitation 4kV+ ESD Protection MIL/STD 883 Class 3


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    PDF EMV2000, 7511D AT83C26-RKTUL AT83C26 AT83C26 Application Note EMV2000 QFN48 VQFP48 cardin2 CDS12

    AT8XC5122D

    Abstract: schematic diagram scart to usb dps 8000 AT89C5122D 80C51 AT83C5122 AT83C5123 AT83EC5122 AT85C5122 AT89C5122
    Text: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    PDF 80C51 4202D AT8XC5122D schematic diagram scart to usb dps 8000 AT89C5122D AT83C5122 AT83C5123 AT83EC5122 AT85C5122 AT89C5122

    AT89C5122D

    Abstract: gsm coding in c for 8051 microcontroller VQFP64 at89C5122D-RDTUM THX 201 transistor WT4 transistor WT6 WT21 WT4 smd 80C51
    Text: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    PDF 80C51 4202E AT89C5122D gsm coding in c for 8051 microcontroller VQFP64 at89C5122D-RDTUM THX 201 transistor WT4 transistor WT6 WT21 WT4 smd

    scr inverter schematic circuit

    Abstract: at89C5122D-RDTUM AT89C5122D AT89C5122D-ALRUM WT4 smd AT89C5122D-RDRUM 4202F at89C5122D-ALTUM SCR 106 B AT83R5122
    Text: Features • Clock Controller • • • • • • • • • • • • – 80C51 core with 6 clocks per instruction – 8 MHz On-Chip Oscillator – PLL for generating clock to supply CPU core, USB and Smart Card Interfaces – Programmable CPU clock from 500 KHz / X1 to 48 MHz / X1


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    PDF 80C51 4202F scr inverter schematic circuit at89C5122D-RDTUM AT89C5122D AT89C5122D-ALRUM WT4 smd AT89C5122D-RDRUM at89C5122D-ALTUM SCR 106 B AT83R5122

    cc8 transistor

    Abstract: 2D TRANSISTOR sot-23 MARKING CODE 2d
    Text: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Collector Base Voltage Rating Unit -3 0 0 -2 0 0 V V -3 0 0 -2 0 0 -5 -5 0 0 350 150 V V V mA mW °C VCBO KST92 KST93 Collector-Emitter Voltage


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    PDF KST92/93 OT-23 KST92 KST93 KSP92/93 KST93 -200V, cc8 transistor 2D TRANSISTOR sot-23 MARKING CODE 2d

    c2259

    Abstract: w188 N2905
    Text: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are


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    PDF fl23SbOS 62702-F91 235bGS sa-1250 c2259 w188 N2905

    Untitled

    Abstract: No abstract text available
    Text: ESC D • fi53SbOS 0004^01 b « S I E G PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF " ^ 2 N 2906 A 3 1 ^7 - 2 N 2907 A 2 N 2 9 0 6 A and 2 N 2 9 0 7 A are epitaxial P N P silicon planar transistors in T O 18 case 18 A 3 DIN 4 1 8 7 6 . T h e co lle cto r is electrically con n ected to th e case. T h e transistors are


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    PDF fi53SbOS 103mA

    Untitled

    Abstract: No abstract text available
    Text: AT-41485 Up to 6 GHz Low Noise Silicon Bipolar Transistor What H E W L E T T mLfim P A C K A R D 85 Plastic Package Features • • • • Low Noise Figure: 1.4 dB typical at 1.0 GHz 1.7 dB typical at 2.0 GHz High Associated Gain: 18.5 dB typical at 1.0 GHz


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    PDF AT-41485 ion-implantatio20

    k 942

    Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
    Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are


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    PDF Q62702-F65 Q62702-F66 C-30V 103mA lfE-20 053SbOS -2N2904A k 942 K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65

    Untitled

    Abstract: No abstract text available
    Text: CA3127 HARRIS S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the


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    PDF CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz

    IC LA7837

    Abstract: LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions colour tv circuit diagram LA 7838 la 7837
    Text: LA7837, 7838 Monolithic Linear 1C No.3313 S A w Vertical Deflection Output Circuit with TV and Display Drive Circuit ro . i The LA7837 7838 are vertical deflection output ICs developed for use in high-grade TVs and displays. The interlace and crossover distortion responses, in particular, have been greatly improved, allowing


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    PDF LA7837, LA7837 IC LA7837 la7837 pin out LA7837* pin voltages LA7838 la7837 vertical LA7837 functions colour tv circuit diagram LA 7838 la 7837

    647 transistor

    Abstract: TA6206 cascode transistor array
    Text: H A RR IS S E M I C O N D S E C T O R ¡SjHARRIS blE D • 4 3 02 27 1 0 0 4 7 0 H b b46 « H A S 1A1197 Æ U S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features • Gain Bandwidth Product (fT Description .>1GHz


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    PDF 1A1197 CA3127* CA3127 500MHz. CA3127 100MHz 647 transistor TA6206 cascode transistor array

    ctv circuit diagram

    Abstract: STK792-110 DS442 2sa1209 equivalent projectors power supply diagram C2911S 2SC2911
    Text: Ordering number: EN 5017 | Thick Film Hybrid IC STK792-110 Vertical Deflection Output Circuit for CTV and CRT Displays Overview Package Dimensions The S T K 792-110 is a vertical output am plifier and supply sw itching circuit hybrid IC for high withstand voltage,


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    PDF STK792-110 22//F/16V F/35V 100/J750V 0022/jF 1000/iF/35V 22//F/160V F/160V F/50V STK792-110 ctv circuit diagram DS442 2sa1209 equivalent projectors power supply diagram C2911S 2SC2911

    H11AA1 equivalent

    Abstract: C2303 11AA2
    Text: QUALITY TECHNOLOGIES AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS 1 9 H11AA1 H11AA3 H11AA2 H11AA4 The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. T~ 6.86 6.35 o i _ 8.89 Bi-polar emitter input


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    PDF H11AA1 H11AA3 H11AA2 H11AA4 H11AAX C2090 C2089 C2303 C2309 H11AA1 equivalent 11AA2

    DS442

    Abstract: 2sa1209 equivalent ctv circuit diagram ku vsat amplifier STK792-110 2SA1209 2SC2911 TR11 2SC2911 equivalent
    Text: Ordering number: EN 5017 Thick Film Hybrid IC STK792-110 No. 5017 Vertical Deflection Output Circuit for CTV and CRT Displays Overview Package D im ensions The STK792-110 is a vertical output amplifier and supply switching circuit hybrid IC for high withstand voltage,


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    PDF STK792-110 STK792-110 DS442 2sa1209 equivalent ctv circuit diagram ku vsat amplifier 2SA1209 2SC2911 TR11 2SC2911 equivalent

    Untitled

    Abstract: No abstract text available
    Text: January 1990 Editan 3.1 FUJITSU DATA SHEET : MB81461-12/-15 26 2,144-BIT DUAL PORT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dual Port DRAM The Fujitsu MB81461 is a fully decoded, dynamic NMOS random access memory organized as 65,536 words by 4 bits dynamic RAM port and 256 words by 4


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    PDF MB81461-12/-15 144-BIT MB81461 MB81464 256-bit MB81461-12 MB81461-15