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    CB SOT23 Search Results

    CB SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    CB SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M208F

    Abstract: No abstract text available
    Text: MICROWAVE SILICON COMPONENTS Case styles M208f Cb=0.12pF S268/W1 F 0.06 E 0.55 D 5 0.1 0.65 .0024 Cb=0.2pF .024 .035 0.51 0.60 .020 .024 ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA .026 .200 E 0.21 0.31 .008 .012 D 1.71 2.00 .067 .079 .022 9.8 10.2 .392 .408 1.35


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    PDF M208f S268/W1 M208F

    LCD PANASONIC INVERTER DIAGRAM

    Abstract: 560k ohm resistor 2pin 4 MHz crystal Small DIP GRAPHICAL LCD INTERFACING DIAGRAM graphical LCD with 3.3 volt pot 10k AD5200BRM10 lcd 240 320 lcd pcb to lcd control wire diagram CB-GT570
    Text: CB-GT570 Hardware Specifications This page provides hardware and electrical documentation for the Controller Board Rev. H2, part number CB-GT570. This is the same LCD controller board integrated with the 5.7" LCD Starter Kit STK-GT570 and the 5.7" LCD Module Kit (MK-GT570). References to software in this document refer to the


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    PDF CB-GT570 CB-GT570. STK-GT570) MK-GT570) 640x480) RS232 LCD PANASONIC INVERTER DIAGRAM 560k ohm resistor 2pin 4 MHz crystal Small DIP GRAPHICAL LCD INTERFACING DIAGRAM graphical LCD with 3.3 volt pot 10k AD5200BRM10 lcd 240 320 lcd pcb to lcd control wire diagram

    c5v diode

    Abstract: diode c5v
    Text: KDV251M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR C/P, CB PLL B A FEATURES Low Series Resistance : 0.6 Max. O F High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H G M RATING UNIT Reverse Voltage VR 12 V


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    PDF KDV251M/S 50MHz c5v diode diode c5v

    c8v sot

    Abstract: KDV152S
    Text: KDV152S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO for CB, C/P PLL APPLICATION. FEATURES E B L ᴌLow Series Resistance : rS=0.3 Typ. . L 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ) UNIT VR 15 V


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    PDF KDV152S 100MHz 50MHz c8v sot KDV152S

    MMBTA92

    Abstract: SOT-23 2D
    Text: MMBTA92 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous Symbol V CE O V CB O


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    PDF MMBTA92 OT-23 20Vdc 20MHz 23-Sep-05 OT-23 MMBTA92 SOT-23 2D

    Untitled

    Abstract: No abstract text available
    Text: MMBTA92 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous Symbol V CE O V CB O


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    PDF MMBTA92 OT-23 20Vdc 20MHz 23-Sep-05 OT-23

    capacitor 10MF smd

    Abstract: 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC
    Text: Bill of Materials for the NCP 1450 Bipolar Transitor 3.3V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor


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    PDF 220mF 3000pF 10uH/1 OT-23 OT223 capacitor 10MF smd 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC

    10mf 16v 0603

    Abstract: npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v
    Text: Bill of Materials for the NCP 1450 Bipolar Transitor 5.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor


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    PDF 220mF 3000pF 10uH/1 OT-23 NCP1450ASN50T1 MBRM110L OT22Capacitor 10mf 16v 0603 npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v

    capacitor 10MF

    Abstract: capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR
    Text: Bill of Materials for the NCP 1450 Bipolar Transitor 3.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller 3.0 V Schottky Power Rectifier Bipolar Power NPN 3A 30V


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    PDF 220mF 3000pF 10uH/1 OT-23 NCP1450ASN30T1 MBRM110L OT22ofile capacitor 10MF capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR

    10mf 16v 0603

    Abstract: H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR
    Text: Bill of Materials for the NCP 1450 Bipolar Transitor 2.7V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor


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    PDF 220mF 3000pF 10uH/1 OT-23 NCP1450ASN27T1 MBRM110L 10mf 16v 0603 H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR

    RLF7045T

    Abstract: led tail light pwm dimming RLF7045 capacitor 100nf 25v 0805 datasheet LM5010 lm321 vishay resistor C4532X7R2A105M AQY221N2S LMV321
    Text: 1-12-05 Rev. 1 LM5010 Brake-Tail LED Drive U1 SW LED1 VIN Vcc CB D1 BST LM5010 CO Tail D3 L1 To Cff RESR ISEN + C IN VCC RON CF1 D2 D4 RON/SD Brake CSS SGND SS RTN FB Vout CFF RFF Vcc U2 RSET RI + - CF2 LM321 RTAIL RBRAKE Q1 PhotoMOS RPHD Theory of Operation


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    PDF LM5010 LM5010 LM321 300mA. 900mA. voltageA106M VJ0805Y104KXXAT VJ0805Y102KXXAT VJ0805A471KXXAT CRCW08051R00F RLF7045T led tail light pwm dimming RLF7045 capacitor 100nf 25v 0805 datasheet lm321 vishay resistor C4532X7R2A105M AQY221N2S LMV321

    KV1225

    Abstract: KV1235Z KV1226
    Text: DIODES TO K O 22 Y Variable Capacitance Diodes Application For AM Layout 3 element C iv: 5 1 0 -6 2 0 2 element C 25v :16~26 Capacitance ratio A C Max. Package 200 3°/o * 3 CB-3-6 1V, 1MHz 2% * 3 CB-2-4 CB-1-2 KV1225 Tun. KV1226 Tun. KV1230Z VCO 1 element


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    PDF KV1225 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1260 KV1260-2 KV1260M KV1280-1 KV1225 KV1235Z KV1226

    KDV152S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV152S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO for CB, C/P PLL APPLICATION. FEATURES • Low Series Resistance : rs=0.3 Typ. . • Small Package. DIM MILLIMETERS A B 1.30+0.20/—0.15 2.93Ì0.20 C 1.30 MAX


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    PDF KDV152S OT-23 10juA 100MHz 50MHz KDV152S

    c5v diode

    Abstract: KDV251M KDV251S 127 S0T23 cov marking S0T23
    Text: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6£2 Max. • High Capacitance Ratio : 1.7(Min.) —2.2(Max.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


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    PDF KDV251M/S KDV251M O-92M S0T-23 10juA 50MHz c5v diode KDV251M KDV251S 127 S0T23 cov marking S0T23

    Untitled

    Abstract: No abstract text available
    Text: KDV251M/S SEM ICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TE CHNICAL DATA VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6 £2 Max. • High Capacitance Ratio : 1.7(Min.)~2.2(Max.) n r "j 0T 3 DIM M ILLIM ETER S A 3.20 MAX


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    PDF KDV251M/S OT-23 50MHz 50MHz

    sot23 transistor marking 12E

    Abstract: 12E MARKING kec marking N
    Text: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure, High Gain. • NF=1.2dB, |S2le|2=13dB f=lGHz . ° MAXIMUM RATING (Ta=25°C) ! SYMBOL V cB O V cE O V e bo Ic J i Mlà


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    PDF KTC3790S sot23 transistor marking 12E 12E MARKING kec marking N

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D • hbS3T31 QQlbEHE 5 ■ Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. ’ TYPE PACKAGE -•.- RATINGS hFE •c V<iE(sat) " m ax « atlc% / ’ mA/mA ' ’ .*r. typmh2 PINOUT SEE SECTION Vt VCEO V V cB C ¥ mA 20 50


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    PDF hbS3T31 PZTA93 BSP16 BST16 OT-23 OT-89 T-223 OT-223 PMBTA92

    BC-337 B 011

    Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
    Text: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation


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    PDF CB-166 ISOT-23) BCW31 BCW32 BCW33 BCW71 BCW72 BCX20 BSV52 BC-337 B 011 BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 -4 -5 0 0 350 150 V V V mA mW °C 357 °CW V cB O KST55 KST56 Collector-Emitter Voltage


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    PDF KST55/56 OT-23 KST55 KST56 KSP55 -100fiA,

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56


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    PDF KST55/56 OT-23 KST55 KST56 KSP55 KST56

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e


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    PDF 000b3A7 O-92ITO-226AA TP2907 TP2907A

    Untitled

    Abstract: No abstract text available
    Text: This I cr Material Ln a tH Pro Electron Surface Mount Bipolar Devices continued t -1 UJ □ Copyrighted □ □ JE □ tn ru _□ Device No. (SOT-23 Mark) Case Style V CES * V CEO v CBO (V) (V) Min Min v *CES* V EBO (V) Min V CB (nA) Max (V) hfa c & & CE


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    PDF OT-23

    marking C1

    Abstract: TMPTA70 TMPT5401 h2t1
    Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0


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    PDF OT-23/TO-236AB BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B BCW68F marking C1 TMPTA70 TMPT5401 h2t1

    Untitled

    Abstract: No abstract text available
    Text: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max


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    PDF S0113D OT-23 BC859C BC860C O-236 BCP52 BCP53 O-261