Untitled
Abstract: No abstract text available
Text: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max
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S0113D
OT-23
BC859C
BC860C
O-236
BCP52
BCP53
O-261
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TN6717A
Abstract: NZT6717
Text: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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NZT6717
OT-223
LS01130
O-226
TN6717A
NZT6717
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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NDS8839H
bS0113D
NDS8839H
Complementary MOSFET Half Bridge
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NDH8302P
Abstract: No abstract text available
Text: f i National Semiconductor" June 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.
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NDH8302P
0025in7
300ns,
bS0113D
NDH8302P
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NDS332P
Abstract: NDS332
Text: e* M ay 1996 N a tio n a I Semiconductor" PRELIMINARY NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using Nationals
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NDS332P
sail30
NDS332P
NDS332
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