melf diode code
Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
melf diode code
glass mini melf diode
mini melf diode
Schottky melf
BAS85
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode
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BAS85
C-120
BAS85Rev121105E
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BAS86
Abstract: M3D121 PHILIPS DIODE SOD80
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS86 Schottky barrier diode Product specification Supersedes data of 1996 Mar 20 1996 Oct 01 Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage
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M3D121
BAS86
OD80C
BAS86
M3D121
PHILIPS DIODE SOD80
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SOD80
Abstract: BAS85 M3D121 diode bas85
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Supersedes data of 1996 Mar 20 1996 Oct 01 Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage
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M3D121
BAS85
OD80C
SOD80
BAS85
M3D121
diode bas85
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diode bas85
Abstract: BAS85 M3D121
Text: DISCRETE SEMICONDUCTORS DATA SHEET page M3D121 BAS85 Schottky barrier diode Product specification Supersedes data of 1996 Mar 20 File under Discrete Semiconductors, SC01 1996 Oct 01 Philips Semiconductors Product specification Schottky barrier diode BAS85
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M3D121
BAS85
OD80C
diode bas85
BAS85
M3D121
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BA481
Abstract: mixer diode noise diode UHF mixer
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode BA481 FEATURES DESCRIPTION • Low forward voltage
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M3D050
BA481
DO-34)
MAM193
BA481
mixer diode
noise diode
UHF mixer
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SOD80C
Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an
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M3D121
BAS85
OD80C
OD80C
100H01
SOD80C
M3D121
BAS85
smd diode marking Av
100H01
smd diode package sod80
PHILIPS DIODE SOD80
marking 37 schottky
SMD 157 diode
diode smd marking V
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BAS86
Abstract: M3D121
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS86 Schottky barrier diode Product data sheet Supersedes data of 1996 Oct 01 2000 May 25 NXP Semiconductors Product data sheet Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an
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M3D121
BAS86
OD80C
613514/03/pp8
BAS86
M3D121
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B568
Abstract: GOLD CHEM FILM PER MIL-DTL-5541 CLASS 3 SAE-AMS-QQ-P-416 gg2j MIL-DTL-5541 AMS-QQ-A-200 ams-qq-p-416 type II, Class 2 66002 SAE AS85049 Boeing 787
Text: 66 & 78 660-023 Plug - 660-024 (Receptacle) Protective Covers MIL-C-38999 Series III Threaded 660-023 M 15 S 5 -04 Basic Part No. 660-023 Plug 660-024 Receptacle MIL-C-38999 Series III Ring or Eyelet Dash No. (Tables IV, V, VI, VII) Attachment Length (in inches)
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MIL-C-38999
B568
GOLD CHEM FILM PER MIL-DTL-5541 CLASS 3
SAE-AMS-QQ-P-416
gg2j
MIL-DTL-5541
AMS-QQ-A-200
ams-qq-p-416 type II, Class 2
66002
SAE AS85049
Boeing 787
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BAS83
Abstract: BAS81 BAS82 M3D121 SOD80 marking smd 816
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS81; BAS82; BAS83 Schottky barrier diodes Product specification Supersedes data of 1996 Sep 30 1998 Jun 24 Philips Semiconductors Product specification Schottky barrier diodes BAS81; BAS82; BAS83 FEATURES
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M3D121
BAS81;
BAS82;
BAS83
OD80C
SCA60
115104/00/04/pp8
BAS83
BAS81
BAS82
M3D121
SOD80 marking
smd 816
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BAS85
Abstract: smd diode code BAS85 BAS85,115
Text: BAS85 Schottky barrier diode Rev. 05 — 25 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted
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BAS85
OD80C
BAS85
smd diode code BAS85
BAS85,115
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BAS85
Abstract: BP317 M3D121
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Supersedes data of 1996 Oct 01 2000 May 25 Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage
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M3D121
BAS85
OD80C
613514/04/pp8
BAS85
BP317
M3D121
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BAS86
Abstract: M3D121
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS86 Schottky barrier diode Product specification Supersedes data of 1996 Oct 01 2000 May 25 Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage
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M3D121
BAS86
OD80C
613514/03/pp8
BAS86
M3D121
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1N4148
Abstract: 1N4148 silicon diodes 1N4446 CECC DO-35 BLUE CATHODE 1N4448 philips markings
Text: 5bE 711002b D □ D 4 G C1 S 3 IIS J P H ILIP S INTERNATIONAL SbE 1N4148 1N4446 1N4448 « P H IN V mmmrn D r-oi- HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications.
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711002b
1N4148
1N4446
1N4448
T-03-07
DO-35
1N4148:
1N4446:
1N4448:
100mA
1N4148 silicon diodes
CECC
DO-35 BLUE CATHODE
philips markings
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Untitled
Abstract: No abstract text available
Text: 1N4148 1N4446 1N4448 J V HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage
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1N4148
1N4446
1N4448
DO-35
1N4148:
1N4446:
1N4448:
OD-27
DO-35)
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diode Cathode indicated by yellow band
Abstract: 1N4148 derating 1N4446 Cathode indicated by blue band DIODE LN4148 J 1N4446 J.1N4446 LN4148 diode 1N4148 1N4448
Text: 1N4148 1N4446 1N4448 HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. Repetitive peak reverse voltage
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1N4148
1N4446
1N4448
DO-35
1N4148:
1N4446
1N4448:
OD-27
DO-35)
diode Cathode indicated by yellow band
1N4148 derating
Cathode indicated by blue band
DIODE LN4148
J 1N4446
J.1N4446
LN4148 diode
1N4148
1N4448
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Untitled
Abstract: No abstract text available
Text: BAS86 JV SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. Thisdiode, in a SOD80C envelope, is intended for applications where a very low forward voltage is required. QUICK REFERENCE DATA
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BAS86
OD80C
OD80C.
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification UHF mixer diode APPLICATIONS BA481 QUICK REFERENCE DATA • M ixer applications in: - U H F tuners - Television modulators - R F detectors. SYMBOL PARAMETER CONDITIONS MAX. Vr 4 V If continuous forward current
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BA481
BA481
DO-34)
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Untitled
Abstract: No abstract text available
Text: • ^ 5 3 ^ 3 1 0024318 4b3 « A P X N A PIER PHILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD80C envelope, is intended for applications where a very low forward voltage is
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BAS86
OD80C
OD80C.
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BAS86
Abstract: No abstract text available
Text: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is
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BAS86
10fiA
100i2;
002H320
BAS86
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE D APX bb53T31 DDEblb? D75 U.H.F. MIXER DIODE Silicon epitaxial Schottky-barrier diode in a DO-34 envelope and intended for mixer applications in u.h.f. tuners, t.v. modulators and r.f. detectors. QUICK REFERENCE DATA Continuous reverse voltage
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bb53T31
DO-34
OD-68
DO-34)
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product spscMcation Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage
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BAS85
MRA540
MGC681
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Cathode indicated by a grey band
Abstract: BAS85
Text: Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage
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BAS85
Cathode indicated by a grey band
BAS85
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BAS86
Abstract: Philips Diode schottky mrc129
Text: Philips Semiconductors Product specification Schottky barrier diode BAS86 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed
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BAS86
711Dfl2b
BAS86
Philips Diode schottky
mrc129
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