PGR 50
Abstract: No abstract text available
Text: PGR 603 10 Receiver Module for STM-16 LH/OC-48 LR Key Features • Low power dissipation • Wide operating case temperature range: -5°C to 75°C • Small size 59x36x10 mm • Dynamic range >25 dB (typical) • Operating wavelength 1.3µm or 1.5µm • SDH/SONET compatible for STM-16 /
|
Original
|
PDF
|
STM-16
LH/OC-48
59x36x10
OC-48
GR-253-CORE)
SE-164
1522-PGR
PGR 50
|
2N7002DICT-ND
Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3
|
Original
|
PDF
|
TPS5210EVM-116
TPS5210EVM-116
SLVP116DB
SLVP116DB2
TPS5210
2N7002DICT-ND
16SP270M
schematic main board
J102 fet
4SP820M T
TPS5210
ECSH1CD226R
capacitor 4700 uF 50V
X7R murata
|
CS4050205M
Abstract: 405nm 5mW laser diode 405nm 20mW TS 5225 405nm laser diode 405nm Laser 5 mw
Text: CS4050205M 406nm Compact Laser Diode Key features Visible light λ= 405nm Output powers =20mW Package type=5.6mmΦ High reliability Applications Blu-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4050205M is a MOCVD grown 405nm band GaN laser diode. It's an
|
Original
|
PDF
|
CS4050205M
406nm
405nm
CS4050205M
divers-vis/lcs/cs4050205m
405nm 5mW laser diode
405nm 20mW
TS 5225
405nm laser diode
405nm Laser 5 mw
|
LCU130582
Abstract: No abstract text available
Text: 1310nm Laser Diode LCU130582E/F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)
|
Original
|
PDF
|
1310nm
LCU130582E/F
-40oC
laser-comp85
lcu130582
|
Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series Features - Single and stacked devices up to 130 Watts - Proven AlGaAs high reliability structure - 1 W/A efficiency with 25° beam divergence - Excellent temperature stability - Hermetic and custom designed package
|
Original
|
PDF
|
905-Series
905-Series
|
LCU150588F
Abstract: No abstract text available
Text: Laser Diodes 1550nm Laser Diode 1550nm Laser Diode LCU150588F •Features Un-cooled Laser diode with MQW structure Wide operation temperature range Dew point below -40oC Both ball lens and flat window cap available ■External dimensions Unit : mm ■Absolute Maximum Ratings(Tc=25℃)
|
Original
|
PDF
|
1550nm
LCU150588F
-40oC
divers-vis/lcu/lcu150588f
LCU150588F
|
SM 850nm laser
Abstract: No abstract text available
Text: LASER DIODE LC850D6S-N/P LC850D6S-N/P is 850nm AIGaAs/GaAS MQW fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC850D6S-N/P is a CW single mode injection semiconductor
|
Original
|
PDF
|
LC850D6S-N/P
LC850D6S-N/P
850nm
850d6s
SM 850nm laser
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet High Power Pulsed Laser Diodes 850-Series Features - Single and stacked devices up to 120 Watts - Proven AlGaAs high reliability structure - 1 W/A efficiency with 25° beam divergence - Excellent temperature stability - Hermetic and custom
|
Original
|
PDF
|
850-Series
850-Series
|
Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS
|
Original
|
PDF
|
905-Series
|
Coffin-Manson Equation
Abstract: CHN 841 PP266 powerpc 620 was developed The PowerPC Microprocessor Family CBGA CBGA 255 motorola metal package case 603 MOTOROLA
Text: Motorola's PowerPC 603 and PowerPC 604™ RISC Microprocessor: the C4/Ceramic-ball-grid Array Interconnect Technology Gary B. Kromann, David Gerke, Wayne Huang m Advanced Packaging Technology 6501 William Cannon Dr., OE55 Semiconductor Products Sector Austin, Texas 78735
|
Original
|
PDF
|
603TM
604TM
21x21
PowerPC603
PowerPC604
Coffin-Manson Equation
CHN 841
PP266
powerpc 620 was developed
The PowerPC Microprocessor Family
CBGA
CBGA 255 motorola
metal package case 603 MOTOROLA
|
heat and mass transfer
Abstract: No abstract text available
Text: Thermal Management of a C4/Ceramic-Ball-Grid Array: The Motorola PowerPC 603 and PowerPC 604™ RISC Microprocessors Gary B. Kromann m Advanced Packaging Technology Semiconductor Products Sector 3501 Ed Bluestein Blvd, K1 Austin, Texas 78721 ABSTRACT This paper presents various thermal management options
|
Original
|
PDF
|
603TM
604TM
SPECint92/
SPECfp92
21x21
133MHz
heat and mass transfer
|
Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS
|
Original
|
PDF
|
905-Series
|
Untitled
Abstract: No abstract text available
Text: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package
|
Original
|
PDF
|
905-Series
|
AN1267
Abstract: RISC semaphore embedded c programming of fibonacci series
Text: Order this document by AN1267/D Microprocessor and Memory Technologies Group AN1267 Application Note PowerPC 603 Hardware Interrupt Latency In Embedded Applications By Wendell Smith, Paul Nelson, and Amy Dyson, High Performance Embedded Systems The PowerPC™ 603 microprocessor is a RISC design, achieving a high level of performance using instruction
|
Original
|
PDF
|
AN1267/D
AN1267
603TM
AN1267
RISC semaphore
embedded c programming of fibonacci series
|
|
|
laser diode chip 635nm
Abstract: No abstract text available
Text: SLD1132VS 635nm Red Laser Diode Description The SLD1132VS is a red laser diode designed for laser pointers. Its wavelength 635nm typ. is shortened by 35nm and visibility is increased by approximately 7 times, compared to the conventional visible laser diode (670nm typ.).
|
Original
|
PDF
|
SLD1132VS
635nm
SLD1132VS
670nm
M-274
laser diode chip 635nm
|
Untitled
Abstract: No abstract text available
Text: LASER DIODE LC-30S-750C LC-30S-750C is 750nm AIGaAs/GaAS MQW structure fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-30S-750C is a CW single mode injection semiconductor laser with built-in monitor photodiode to
|
Original
|
PDF
|
LC-30S-750C
LC-30S-750C
750nm
OT-148)
|
DVD laser head
Abstract: "dvd pickup"
Text: LASER DIODE LC-50S-660C/D-60X LC-50S-660C/D-60X is 660nm AlGaInP quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-660C/D-60X is a CW single mode injection
|
Original
|
PDF
|
LC-50S-660C/D-60X
LC-50S-660C/D-60X
660nm
DVD laser head
"dvd pickup"
|
Untitled
Abstract: No abstract text available
Text: iC-VJ, iC-VJZ LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Transmitter for laser light barriers from 1 to 200kHz ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ◊ ◊ Laser diode driver of up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode
|
Original
|
PDF
|
200kHz
250mA
|
UM1017
Abstract: PMV45EN LTST-C190UBKT TPS40071 TPS40071PWP CHOKE COMMON NXP MOSFETs SOT23-MOSFET UM10177 LEDR10
Text: UM10177 8 A PoL converter using SOT23 MOSFETs Rev. 02 — 21 December 2007 User manual Document information Info Content Keywords SOT23 MOSFET PoL PMV45EN demo board Abstract Point of Load PoL converters are at the leading edge of power supply performance in terms of power density and efficiency, however,
|
Original
|
PDF
|
UM10177
PMV45EN
UM10177
UM1017
LTST-C190UBKT
TPS40071
TPS40071PWP
CHOKE COMMON
NXP MOSFETs
SOT23-MOSFET
LEDR10
|
CQ13
Abstract: CQ31 TQFP48 TSA1201 TSA1204 TSA1204IF TSA1204IFT
Text: TSA1204 DUAL-CHANNEL, 12-BIT, 20MSPS, 120mW A/D CONVERTER • 0.5Msps to 20Msps sampling frequency ■ Adaptative power consumption: 120mW @ CKD VCCBI GNDBE D1 OEB VCCBE AVCC D0 LSB AVCC 38 37 D2 D3 AGND 3 34 D4 INBI 4 33 D5 AGND 5 32 D6 IPOL 6 31 D7 30 D8
|
Original
|
PDF
|
TSA1204
12-BIT,
20MSPS,
120mW
20Msps
120mW
10Msps
CQ13
CQ31
TQFP48
TSA1201
TSA1204
TSA1204IF
TSA1204IFT
|
E4445A
Abstract: 3102006 933MHZ C100 C101 C103 C104 C105 E5052 LMX2531LQ1742
Text: LMX2531LQ1742 Evaluation Board Operating Instructions National Semiconductor Corporation Wireless Communications, RF Products Group 2900 Semiconductor Dr. MS A2-600 Santa Clara, CA, 95052-8090 LMX2531LQ1742FPEB Rev 3.10.2006 L M X 2 5 3 1 L Q 1 7 4 2 E V A L U A T I O N
|
Original
|
PDF
|
LMX2531LQ1742
A2-600
LMX2531LQ1742FPEB
E4445A
3102006
933MHZ
C100
C101
C103
C104
C105
E5052
LMX2531LQ1742
|
diode zener c72
Abstract: u34 diode C137 philips smt r100 resistor C143 led 10w PAL26V12 Philips zener diode ct2 diode U 34 C83 diode zener c55 C82 diode zener cr9
Text: Am186CC ISDN Router Reference Design Revised: Friday, April 09, 1999 Revision: 2.1 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials May 24,1999 Item Part 4700pF 0.022uF
|
Original
|
PDF
|
Am186CC
4700pF
022uF
047uF
OT-23
001uF
330uF
3300pF
220pF
C17vations
diode zener c72
u34 diode C137
philips smt r100 resistor
C143 led 10w
PAL26V12
Philips zener diode ct2
diode U 34 C83
diode zener c55
C82 diode
zener cr9
|
CQ31
Abstract: marking code c41 SMD ic SW-SPST footprint SA1203I TQFP48 TSA1201 TSA1203 TSA1203IF TSA1203IFT cq13
Text: TSA1203 DUAL-CHANNEL, 12-BIT, 40MSPS, 230mW A/D CONVERTER PIN CONNECTIONS top view AVCC OEB CKD VCCBI GNDBE VCCBE D0(LSB) 41 40 39 38 37 D1 AVCC 42 36 D2 35 D3 3 34 D4 INBI 4 33 D5 A GND 5 32 D6 IPOL 6 31 D7 AVCC 7 30 D8 29 D9 INQ 9 28 D10 A GND 10 27 D11(MS B )
|
Original
|
PDF
|
TSA1203
12-BIT,
40MSPS,
230mW
230mW
10MHz
CQ31
marking code c41 SMD ic
SW-SPST footprint
SA1203I
TQFP48
TSA1201
TSA1203
TSA1203IF
TSA1203IFT
cq13
|
MC1733
Abstract: ne592 video amplifier circuits NE592 MC1733C SE592 differential Amplifiers gain 100 DIFFERENTIAL VIDEO AMPLIFIER case 603 MOTOROLA
Text: AMPLIFIERS continued 17996220 CASE 601 METAL CASE 603 METAL (TO-100) High Frequency Amplifiers A variety of high-frequency circuits with features ranging from low-cost simplicity to multi-function versatility marks Motorola’s line of integrated am plifiers. D e vices described here are
|
OCR Scan
|
PDF
|
SE/NE592
MC1733/MC1733C
SE592
NE592
MC1733C
MO-001AA)
O-100)
MC1733
ne592 video amplifier circuits
differential Amplifiers gain 100
DIFFERENTIAL VIDEO AMPLIFIER
case 603 MOTOROLA
|
