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    CAS10 Price and Stock

    Maxecho Technologies Corp BCAS100505A182

    FERRITE BEAD 1.8K OHM 1005 1LN
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    Maxecho Technologies Corp BCAS100505B471

    FERRITE BEAD 470 OHM 1005 1LN
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    Maxecho Technologies Corp BCAS100505A102

    FERRITE BEAD 1K OHM 1005 1LN
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    DigiKey BCAS100505A102 Reel 10,000 10,000
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    Maxecho Technologies Corp BCAS100505A301

    FERRITE BEAD 300 OHM 1005 1LN
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    Maxecho Technologies Corp BCAS100505A201

    FERRITE BEAD 200 OHM 1005 1LN
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    CAS10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CAS1007984 Switchcraft Cable Assemblies - Barrel - Power Cables - CBL ASSY 2MM PLUG-CBL RND 6.56" Original PDF
    CAS100H12AM1 Cree FETs - Modules, Discrete Semiconductor Products, MOD SIC 1.2KV 165A HALF-BRIDGE Original PDF
    CAS10KS07984 Switchcraft Cable Assemblies - Barrel - Power Cables - HIGH-AMPERAGE SEALED DC POWER CA Original PDF

    CAS10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CAS100H12

    Abstract: No abstract text available
    Text: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package


    Original     		PDF CAS100H12AM1 CAS120M12BM2 CAS100H12AM1 CAS100H12

    CPWR-AN12

    Abstract: CAS100H12AM1
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1 CPWR-AN12

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    CAS10D25

    Abstract: CAS10D25-722 CAS10D25-282
    Text: Antenna < Transponder: RF-ID RX > Type: CAS10D25 ◆ Product Description ＊ 10.2mm Max.x3.7mm Max(L×W), 2.6mm Max. Height. ＊ Operating Temperature: -40℃ ~ +125℃. ◆ Feature ＊ Low profile. ＊ Suitable for smart key system and TPMS. ＊ High Sensitivity and Reliability.


    Original     		PDF CAS10D25 EIA481 2000pcs/reel 100mm 160mm 2000pcs 400mm CAS10D25 CAS10D25-722 CAS10D25-282

    CAS100H12

    Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
    Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 VDS1200 CAS100H12AM1, CAS100H12 CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"

    PCB Antenna 125KHz

    Abstract: CAS10D25
    Text: LF Receiver Antenna CAS10D25 RoHS Description •LF receiver antenna for X/Y axis. • Covered by over-molding. • Low profile. • L W H: 10.2 3.7x2.6 mm Max. • Product weight: 0.22g Ref. • RoHS compliance. x × × Environmental Data • Operating temperature range: -40 ~+125


    Original     		PDF CAS10D25 EIA481. 2000pcs/reel. 17-Aug-11 PCB Antenna 125KHz CAS10D25

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original     		PDF CAS100H12AM1 CAS100H12AM1

    nc29

    Abstract: VCC62 GND42 OUT15 c14 c13 IC TTL 7400 VCC15 NC11 NC20 CAS15
    Text: <Value> HSP50215 FIFORDY A0 A1 GND34 A2 A3 A4 VCC38 A5 A6 A7 GND42 A8 A9 WR VCC46 CE RD RST SYNCIN OFM NC2 NC3 CASZ CAS0 CAS1 GND7 CAS2 CAS3 CAS4 NC11 CAS5 CAS6 CAS7 VCC15 GND16 REFCLK CAS8 CAS9 NC20 CAS10 CAS11 VCC23 CAS12 CAS13 CAS14 CAS15 NC28 NC29 NC30


    Original     		PDF HSP50215 GND34 VCC38 GND42 VCC46 VCC15 GND16 CAS10 CAS11 VCC23 nc29 VCC62 GND42 OUT15 c14 c13 IC TTL 7400 VCC15 NC11 NC20 CAS15

    TY320

    Abstract: IA-EM02A
    Text: EXAMINED BY : FILE NO . Kevin Kuo ISSUE : EMERGING DISPLAY APPROVED BY: CAS-10227 MAY.06,2002 TOTAL PAGE : 13 TECHNOLOGIES CORPORATION VERSION : CUSTOMER ACCEPTANCE MODEL SPECIFICATIONS NO . : 32F62 CCFL TYPES FOR MESSRS : CUSTOMER'S APPROVAL : _


    Original     		PDF CAS-10227 32F62 IA-EM02A1 TY320 IA-EM02A

    Y320

    Abstract: No abstract text available
    Text: EXAMINED BY : FILE NO . EMERGING DISPLAY APPROVED BY: TECHNOLOGIES CORPORATION ISSUE : DEC.01,2003 TOTAL PAGE : VERSION : CUSTOMER ACCEPTANCE MODEL CAS-10295 13 3 SPECIFICATIONS NO . : 32F62 LED TYPES FOR MESSRS : CUSTOMER'S APPROVAL : _


    Original     		PDF CAS-10295 32F62 Y320

    CA10

    Abstract: V54C3256804VA
    Text: MOSEL VITELIC V54C3256804VA HIGH PERFORMANCE 3.3 VOLT 32M X 8 SYNCHRONOUS DRAM 4 BANKS X 8Mbit X 8 PRELIMINARY -7PC -7 -8PC -8 System Frequency fCK 143MHz 143MHz 125MHz 125MHz Clock Cycle Time (tCK3) 7 ns 7 ns 8 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3


    Original     		PDF V54C3256804VA 143MHz 125MHz CA10 V54C3256804VA

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7


    OCR Scan     		PDF HYB39S16160CT-6/-7 16MBit

    35Z diode

    Abstract: CX530 RADOS transistor cs522 74ABT4764BB CS511 CS522 CA-512 74abt4764 T72 diode
    Text: BICMOS LOGIC PRODUCTS 7 4 A B T 4 7 6 4 Programmable DRAM Controller Product Specification March 2 2 ,1 9 9 4 IC23 Philips Semiconductors PHILIPS PHILIPS This Mate] m tei 1 1 0 Ö 2 L D G Ô3 2 Philips Semiconductors BiCMOS Logic Products Product specification


    OCR Scan     		PDF 74ABT4764 80MHz 53-1420A 7110fiEb 35Z diode CX530 RADOS transistor cs522 74ABT4764BB CS511 CS522 CA-512 74abt4764 T72 diode

    IA-EM02A

    Abstract: Emerging Display Technologies 6 ccfl inverter LCD display CCFL inverter Emerging Display EG SY 180/12 200H EU-002 ccfl inverter 6 pin 32E00
    Text: FILE NO . CAS-10073 EXAMINED BY : EMERGING DISPLAY APPROVED BY: ISSUE : AUG. 10, 1998 TOTAL PA G E : TECHNOLOGIES CORPORATION VERSION : 4 CUSTOMER ACCEPTANCE SPECIFICATIONS f \ M ODEL NO . : 32E00ÎCCFL TYPES FO R M ESSRS : 10 CUSTOMER'S APPROVAL DATE : BY


    OCR Scan     		PDF CAS-10073 32E00Ã 32E00 IA-EM02A IA-EM02A Emerging Display Technologies 6 ccfl inverter LCD display CCFL inverter Emerging Display EG SY 180/12 200H EU-002 ccfl inverter 6 pin

    Untitled

    Abstract: No abstract text available
    Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212


    OCR Scan     		PDF fi23SbOS 0031bl0 82C212 M/256 640CHAF SAB82C212

    39S256160T

    Abstract: PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54
    Text: H Y B 39S 25 640 0/8 00/1 60 T 256M B it S ynch ro n o u s DRAM S IE M E N S 2 5 6 M B it S y n c h ro n o u s D R A M P re lim in a ry In fo rm a tio n • High Perform ance: Multiple Burst Operation -8 -8B -10 Units fC K 125 100 100 M Hz tC K 3 8 10 10 ns


    OCR Scan     		PDF HYB39S256400/800/160T 256MBit HYB39S256400/800/160AT 39S256160T PC100-333-620 IT191 s4 marking code siemens SMD MARKING CODE A12 smd marking KH P-TSOPII-54

    yg 2822

    Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
    Text: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En­ hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12


    OCR Scan     		PDF CS8221 82C211 /82C212/82C215/82C206 12MHz 16MHz 100ns 150ns yg 2822 RAS 0510 cs8221 neat Waukesha 6670 82C631 2021G 82C206 CHIPset for 80286 REG62

    cga ega vga converter

    Abstract: No abstract text available
    Text: WD90C20/WD90C20A INTRODUCTION 1.0 INTRODUCTION This data sheet applies to both the WD90C20, and WD90C20A. The WD90C20A is a 0.9 micron version of the WD90C20 VGA controller chip. For convenience all references to these two devices will be referred to as the WD90C20.


    OCR Scan     		PDF WD90C20/WD90C20A WD90C20, WD90C20A. WD90C20A WD90C20 WD90C20. D90C20 D90C00 cga ega vga converter

    Untitled

    Abstract: No abstract text available
    Text: LF2249 12 x 12-bit Digital Mixer DEVICES INCORPORATED FEATURES _ □ 40 MHz Data and Computation Rate □ Two 12 x 12-bit Multipliers with Individual Data Inputs □ Separate 16-bit Input Port for Cascading Devices □ Independent, User-Selectable 1-16 Clock Pipeline Delay for Each Data


    OCR Scan     		PDF LF2249 12-bit 16-bit TMC2249 120-pin LF2249 12-bit 24-bit

    39S256160T

    Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
    Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled


    OCR Scan     		PDF YB39S25640x/80x/16xT 256MBit P-TSOPII-54 400mil P-TSOPII-54 400mil, TSOPII-54 TSOP54-2 39S256160T APA10 39S256160T-8 39S256400T-8

    Untitled

    Abstract: No abstract text available
    Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 Wc RAS Access Time 60ns toAC CAS Access Time 20ns tAA Access Time From Address


    OCR Scan     		PDF IBM11M32730B IBM11M32730C 32Mx72 110ns 50H8198

    SEM t11

    Abstract: 39S16800 39S16800AT-8 Q1323 q1333
    Text: HYB39S1640x/80x/16xAT-8/-10 16MBit Synchronous DRAM SIEMENS 16 MBit Synchronous DRAM second generation Advanced Information • High Performance: Multiple Burst Operation CAS latency = 3 -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 7 8 ns Automatic Command


    OCR Scan     		PDF HYB39S1640x/80x/16xAT-8/-10 16MBit P-TSOPI-44 400mil SEM t11 39S16800 39S16800AT-8 Q1323 q1333

    Untitled

    Abstract: No abstract text available
    Text: S M A E E S S H S P 5 2 1 5 Digital UpConverter August 1997 Features Description • Output Sample Rates Up to 52 MSPS; Input Data Rates Up to 13 MSPS The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC


    OCR Scan     		PDF HSP50215 32-Bit 30-Bit 1-800-4-HARRIS