Parallel Application LM2596
Abstract: LM2596-ADJ DO3308-223 lm2596adj Capacitor L33 lm2596-12 lm2596 ns lm2596 3.3 negative voltage regulator lm2596 adj
Text: LM2596 GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with excellent line and load regulation. These devices are available
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LM2596
LM2596
RL-1284-22-43
RL1500-22
PE-53815
PE-53815-S
PE-53821
PE-53821-S
Parallel Application LM2596
LM2596-ADJ
DO3308-223
lm2596adj
Capacitor L33
lm2596-12
lm2596 ns
lm2596 3.3
negative voltage regulator
lm2596 adj
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S T R 54041 EQUIVALENT
Abstract: 33u 35v electrolytic capacitor
Text: LM2596 Simple switcher Power Converter 150kHz 3A Step-Down Voltage Regulator GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with
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LM2596
150kHz
needed63-5L
S T R 54041 EQUIVALENT
33u 35v electrolytic capacitor
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smd transistor l32
Abstract: SMD EZ 648 001aan207 BLF0510H6600P
Text: BLF0510H6600P Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF0510H6600P
powe11
smd transistor l32
SMD EZ 648
001aan207
BLF0510H6600P
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blf888
Abstract: L33 TRANSISTOR C4532X7R1E475MT020U Capacitor L33 470 dvb-t transmitters RF35 DVB-T transistor amplifier BLF888 nxp ez90
Text: BLF888 UHF power LDMOS transistor Rev. 02 — 22 October 2009 Preliminary data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
L33 TRANSISTOR
C4532X7R1E475MT020U
Capacitor L33 470
dvb-t transmitters
RF35
DVB-T transistor amplifier
BLF888 nxp
ez90
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SMD EZ 648
Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF988;
BLF988S
BLF988
SMD EZ 648
smd transistor l32
smd transistor L33
smd transistor l31
J2151
J15-12
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Untitled
Abstract: No abstract text available
Text: BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF988;
BLF988S
BLF988
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smd transistor L33
Abstract: SMD l33 Transistor transistor smd l33 BLF879P smd transistor l32 2663 transistor j337 IEC C20 dimension J17-15 J0582
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
771-BLF879P112
BLF879P
smd transistor L33
SMD l33 Transistor
transistor smd l33
smd transistor l32
2663 transistor
j337
IEC C20 dimension
J17-15
J0582
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UT-090C-25
Abstract: smd transistor l32 NXP amplifier EZ 711 253 J1072 ST EZ 711 253
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 — 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
UT-090C-25
smd transistor l32
NXP amplifier
EZ 711 253
J1072
ST EZ 711 253
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SMD l33 Transistor
Abstract: No abstract text available
Text: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar transmitter applications and industrial applications in the frequency range of 400 MHz to 900 MHz.
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BLU6H0410L-600P;
BLU6H0410LS-600P
BLU6H0410L-600P
6H0410LS-600P
SMD l33 Transistor
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Untitled
Abstract: No abstract text available
Text: BLF10H6600P; BLF10H6600PS Power LDMOS transistor Rev. 2 — 20 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF10H6600P;
BLF10H6600PS
BLF10H6600P
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smd transistor L33
Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF879P
smd transistor L33
dvbt transmitter
UT-090C-25
dvb-t2
SMD l33 Transistor
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BLF888
Abstract: dvb-t2 j3076 Technical Specifications of DVB-T2 Transmitter EZ90-25 ttf 103 C4532X7R1E475MT020U RF35 sot979 EZ90-25-TP
Text: BLF888 UHF power LDMOS transistor Rev. 04 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
dvb-t2
j3076
Technical Specifications of DVB-T2 Transmitter
EZ90-25
ttf 103
C4532X7R1E475MT020U
RF35
sot979
EZ90-25-TP
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Untitled
Abstract: No abstract text available
Text: BLF888 UHF power LDMOS transistor Rev. 03 — 11 February 2010 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
BLF888
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smd transistor L33
Abstract: transistor smd l33 SMD l33 Transistor
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
transistor smd l33
SMD l33 Transistor
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Untitled
Abstract: No abstract text available
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
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j3076
Abstract: BLF888 Technical Specifications of DVB-T2 Transmitter J1455 DVB-T2 L33 TRANSISTOR LDMOS digital C4532X7R1E475MT020U RF35 J1378
Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
j3076
BLF888
Technical Specifications of DVB-T2 Transmitter
J1455
DVB-T2
L33 TRANSISTOR
LDMOS digital
C4532X7R1E475MT020U
RF35
J1378
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smd transistor l31
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor l31
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
narrow15
BLF888A
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BLF888B
Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
BLF888B
smd transistor L33
Technical Specifications of DVB-T2 Transmitter
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Untitled
Abstract: No abstract text available
Text: BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W
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BLF888
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
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smd transistor L33
Abstract: UT-090C-25 BLF888A L33 SMD PAR ofdm SMD l33 Transistor 800B 800R BLF888AS C1210X475K5RAC-TU
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 1 — 21 September 2010 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
BLF888A
smd transistor L33
UT-090C-25
L33 SMD
PAR ofdm
SMD l33 Transistor
800B
800R
BLF888AS
C1210X475K5RAC-TU
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PANASONIC HFQ
Abstract: diode 22ph LM2676S
Text: September 1998 Semiconductor LM2676 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator General Description Features The LM2676 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to
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LM2676
externa0-272-9959
PANASONIC HFQ
diode 22ph
LM2676S
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LM2676
Abstract: LM2676S-12 LM2676S-ADJ nichicon 1000uF lm2676 step down regulator LM2676S
Text: LM2676 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator General Description Features The LM2676 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to
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LM2676
LM2676
260KHz)
LM2676S-12
LM2676S-ADJ
nichicon 1000uF
lm2676 step down regulator
LM2676S
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