SPA-1218
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1218
SPA-1218
Matc003
AN-029
EDS-101428
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SPA-1118
Abstract: ECB-101161
Text: Advanced Information Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
AN-029
ECB-101161
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SPA-1218
Abstract: ECB-101161
Text: Advanced Information Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1218
SPA-1218
AN-029
ECB-101161
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TRANSISTOR 726
Abstract: SPA-1118
Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
Prod003
AN-029
EDS-101427
TRANSISTOR 726
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Untitled
Abstract: No abstract text available
Text: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
IS-95
EDS-101427
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MMIC "SOT 89" marking
Abstract: mmic amplifier sot-89 SGC-6389Z MMIC "SOT 89" marking 12 Sirenza amplifier SOT-89 amplifier sot-89 sot-89 marking ct Sirenza amplifier SOT-89 Marking sgc-6389 sot89 mmic 25
Text: SGC-6389Z Product Description Sirenza Microdevices’ SGC-6389Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the
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SGC-6389Z
SGC-6389Z
Prod0021
EDS-104747
OT-89
MMIC "SOT 89" marking
mmic amplifier sot-89
MMIC "SOT 89" marking 12
Sirenza amplifier SOT-89
amplifier sot-89
sot-89 marking ct
Sirenza amplifier SOT-89 Marking
sgc-6389
sot89 mmic 25
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
AN-029
EDS-101427
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MCH18
Abstract: MCR03 SPA-1118 SPA-1118Z TAJB106K020R
Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
SPA-1118Z
EDS-101427
MCH18
MCR03
SPA-1118Z
TAJB106K020R
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200 watt schematics power amp
Abstract: MCH18 MCR03 SPA-1118 SPA-1118Z TAJB106K020R Sirenza Microdevices al
Text: SPA-1118 Product Description Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
SPA-1118Z
EDS-101427
200 watt schematics power amp
MCH18
MCR03
SPA-1118Z
TAJB106K020R
Sirenza Microdevices al
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transistor 9232
Abstract: No abstract text available
Text: A ti« O M w a n A M P com pany Radar Pulsed Power Transistor, 10W, 100ns Pulse, 10% Duty 3.1-3.4 GHZ PH3134-10M Features • • • • • • • • b/y :14 4B> NPN Silicon M icrow ave Pow er T ran sisto r C o m m o n Base C onfig u ratio n B ro a d b an d Class C O p e ra tio n
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100ns
PH3134-10M
ATC100A
transistor 9232
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icl7106a
Abstract: AN046
Text: ICL7126 HARRIS S E M I C O N D U C T O R 3 1/2 Digit, Low Power, Single-Chip A/D Converter January 1998 Description Features 8,000 Hours Typical 9V Battery Life The ICL7126 is a high performance, very low power 3 1 / 2 -digit, A/D converter. All the necessary active devices
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ICL7126
ICL7126
1-800-4-HARRIS
icl7106a
AN046
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Untitled
Abstract: No abstract text available
Text: ICL7126 HARRIS S E M I C O N D U C T O R 31/2 Digit, Low Power, Single-Chip A/D Converter August 1997 Features Description • 8,000 Hours Typical 9V Battery Life The ICL7126 is a high performance, very low power 3 1/2-digit, A/D converter. All the necessary active devices
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ICL7126
ICL7126
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icl7107 thermometer digital
Abstract: controlling with icl7116
Text: ICL7116, ICL7117 & MAB , 31/2 Digit, LCD/LED Display, January 1998 A/D C onverter w ith Display Hold Features Description • HOLD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low power, 3 V 2 digit, A/D converters. Included are seven segment
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ICL7116,
ICL7117
ICL7116
ICL7117
ICL7106
ICL7107
icl7107 thermometer digital
controlling with icl7116
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ES 5106 V
Abstract: No abstract text available
Text: Multi-Function, Synchronous plus Auxiliary PWM Controller The CS-5106 is a fixed frequency, current mode controller with one single NFET driver and one dual FET, synchronous driver. The syn chronous driver allows for increased efficiency of the main iso
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CS-5106
CS-5106
CS-5106SW
ES 5106 V
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27C 0626
Abstract: No abstract text available
Text: £ÿj SGS-THOMSON D ii©l[LI ê,in^@lü!lD(gi M 27W 160 16 Mbit (x8/x16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 100ns at Vcc = 3.0V to 3.6V - 120ns at Vcc = 2.7V to 3.6V ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE
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x8/x16)
100ns
120ns
50sec.
0020h
00B1h
M27W160
M27W160
27C 0626
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Untitled
Abstract: No abstract text available
Text: IC L 7 1 1 6 , IC L 7 1 1 7 h a r r i s S E M I C O N D U C T O R " mm " " " } " " " * " 3 1/2 Digit, LCD/LED Display, A/D Converter with Display Hold August 1997 Features Description • HOLD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low
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ICL7116
ICL7117
47jiF
100kii
100kii220kii
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Untitled
Abstract: No abstract text available
Text: February 1997 PRELIMINARY 3 ^ Micro Linear ML6424/ML6425 CCIR601 Video Lowpass Filter with Optional Sinx/x Correction GENERAL DESCRIPTION FEATURES The ML6424 is a monolithic BiCMOS Video Lowpass Filter IC, incorporating a 5th order Elliptic Cauer lowpass
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ML6424/ML6425
CCIR601
ML6424
ML6425
75MHz
50MHz
ML6424/ML6425
ML6425-2
500ns/div.
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Untitled
Abstract: No abstract text available
Text: SHM-4860 l~ l A l l- 1 Industry-Standard, High-Speed ±0.01% Sample-Hold Amplifiers INNOVATION a n d EXCELLENCE FEATURES • • • • • • 200ns Maximum acquisition time ±0.01% Accuracy 100ns Maximum sample-hold settling time 74dB Feedthrough attenuation
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SHM-4860
200ns
100ns
SHM-4860
-4860M
SHM-486Q/883
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Untitled
Abstract: No abstract text available
Text: SD2 fí S u p ertex in c . CMOS Photo-Electric Smoke Detector Integrated Circuit General Description Ordering Information Device Package Order No. SD2 16-Pin Plastic SD2P SD2 SOW-20 SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low
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UL217
16-pin
SOW-20
20MS2
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L64251
Abstract: No abstract text available
Text: February 1997 PRELIM INARY % M i c r o L in e a r ML6424/ML6425 CCIR601 Video Lowpass Filter with Optional Sinx/x Correction GENERAL DESCRIPTION FEATURES The M L6424 is a monolithic BiCM OS Video Lowpass Filter IC, incorporating a 5th order Elliptic Cauer lowpass
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ML6424/ML6425
CCIR601
L6424
L6425
L6424-1
16-Pin
L6424-2
ML6425-1
L64251
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Untitled
Abstract: No abstract text available
Text: 9* ^ I C L 7116, I C L 7 1 1 7 3 1/2 Digit, LCD/LED Display, January 1998 A/D C onverter w ith Display Hold Features Description • H O LD Reading Input Allows Indefinite Display Hold The Harris ICL7116 and ICL7117 are high performance, low power, 3 V 2 digit, A/D converters. Included are seven segment
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ICL7116
ICL7117
5M-1982.
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cj TL431 transistor
Abstract: No abstract text available
Text: UCC1581 UCC2581 UCC3581 y UNITRODE Micropower Voltage Mode PWM FEATURES BLOCK DIAGRAM • Low 85jiA Startup Current • Low 300^iA Operating Current • Automatically Disabled Startup Preregulator OUT • Programmable Minimum Duty Cycle with Cycle Skipping
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85jiA
UCC1581
UCC2581
UCC3581
14-pin
UDG-95011-1
UCC3581
cj TL431 transistor
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Untitled
Abstract: No abstract text available
Text: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG20N60C3,
HGTP20N60C3,
HGT1S20N60C3,
HGT1S20N60C3S
108ns
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Untitled
Abstract: No abstract text available
Text: ACF2101 B U R R -B R O W N Low Noise, Dual SWITCHED INTEGRATOR FEATURES APPLICATIONS • INCLUDES INTEGRATION CAPACITOR, RESET AND HOLD SWITCHES, AND OUTPUT MULTIPLEXER • LOW NOISE: lO^Vrms • LOW CHARGE TRANSFER: 0.1 pC • WIDE DYNAMIC RANGE: 120dB
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ACF2101
120dB
100fA
ACF2101
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