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    CANADA ICES 003 Search Results

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    1N5825

    Abstract: BD243B BD243C BD244B BD244C MSD6100
    Text: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100

    BD241C-D

    Abstract: BD241C BD242C
    Text: ON Semiconductort Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device


    Original     		PDF BD241C* BD242C* BD241C, BD242C r14525 BD241C/D BD241C-D BD241C BD242C

    BD241C

    Abstract: No abstract text available
    Text: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors BD241C * PNP BD242B . . . designed for use in general purpose amplifier and switching applications. BD242C * • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device


    Original     		PDF BD241C BD242B BD242C BD242B BD241C, BD242C r14525 BD241C/D BD241C

    BA241

    Abstract: ba241c 30Vc
    Text: NPN BD241C * Complementary Silicon Plastic Power Transistors PNP BD242B BD242C * . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — *ON Semiconductor Preferred Device VCE = 1.2 Vdc Max @ IC = 3.0 Adc


    Original     		PDF BD241C BD242B BD242C BD241C, BD242C r14525 BA241C/D BA241 ba241c 30Vc

    TIP32C

    Abstract: tip318 TIP32C equivalent tip318 transistor TIP32A tip32A application circuit tip31c
    Text: ON Semiconductort NPN TIP31A Complementary Silicon Plastic Power Transistors TIP31B * MJF31C* . . . designed for use in general purpose amplifier and switching applications. PNP TIP31C • Collector–Emitter Saturation Voltage — VCE sat = 1.2 Vdc (Max) @ IC


    Original     		PDF TIP31A TIP31B MJF31C* TIP31C TIP32A TIP32B TIP32C MJF32C TIP31A, tip318 TIP32C equivalent tip318 transistor TIP32A tip32A application circuit

    AN1040

    Abstract: MJF6107 MSD6100 221D 2N6107 1N5825
    Text: ON Semiconductort MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically


    Original     		PDF MJF6107 2N6107 E69369, r14525 MJF6107/D AN1040 MJF6107 MSD6100 221D 2N6107 1N5825

    tip41c tip42c

    Abstract: TIP42C TIP41C EQUIVALENT f tip42c tip41a tip42a TIP41C TIP41C collector characteristic curve 1N5825 MSD6100 TIP41A
    Text: ON Semiconductort NPN TIP41A Complementary Silicon Plastic Power Transistors TIP41B * TIP41C * . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — • • • TIP42A VCE sat = 1.5 Vdc (Max) @ IC


    Original     		PDF TIP41A TIP41B TIP41C TIP42A TIP41A, TIP41B, TIP42B TIP41C, TIP42C tip41c tip42c TIP42C TIP41C EQUIVALENT f tip42c tip41a tip42a TIP41C TIP41C collector characteristic curve 1N5825 MSD6100 TIP41A

    TRANSISTOR 2n5302

    Abstract: 2N5302
    Text: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		PDF 2N5302 r14525 2N5302/D TRANSISTOR 2n5302 2N5302

    BD241C-D

    Abstract: BD241C BD242C
    Text: ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device


    Original     		PDF BD241C* BD242C* BD241C, BD242C r14525 BD241C/D BD241C-D BD241C BD242C

    1N5825

    Abstract: BD243B BD243C BD244B BD244C MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors BD243B BD243C * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B • Collector – Emitter Saturation Voltage — BD244C * VCE sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100

    MJE5190

    Abstract: 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195
    Text: ON Semiconductort 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN


    Original     		PDF 2N5191 2N5192 2N5194, 2N5195. r14525 2N5191/D MJE5190 2N5191 2N5190 2N5190..92 2N5192 2N5194 2N5195

    2N5191

    Abstract: 2N5192 2N5193 2N5194 2N5195
    Text: ON Semiconductort 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


    Original     		PDF 2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5191 2N5192 2N5193 2N5194 2N5195

    2N4923

    Abstract: 2N4921 2N4922 2N4918 2N4919 2N4920
    Text: ON Semiconductort 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device • Low Saturation Voltage —


    Original     		PDF 2N4921 2N4923 2N4918, 2N4919, 2N4920 r14525 2N4921/D 2N4923 2N4921 2N4922 2N4918 2N4919 2N4920

    30-RCT

    Abstract: 2n4920 2N4918 2N4919 2N4921 2N4922 2N4923
    Text: ON Semiconductort 2N4918 thru 2N4920 * Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE


    Original     		PDF 2N4918 2N4920 2N4921, 2N4922, 2N4923 r14525 2N4918/D 30-RCT 2n4920 2N4918 2N4919 2N4921 2N4922 2N4923

    MJF32C

    Abstract: 221D MJF31C
    Text: MJF31C* NPN , MJF32C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc


    Original     		PDF MJF31C* MJF32C* E69369, r14525 MJF31C/D MJF32C 221D MJF31C

    221D

    Abstract: MJF31C MJF32C
    Text: MJF31C* NPN , MJF32C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc


    Original     		PDF MJF31C* MJF32C* E69369, r14525 MJF31C/D 221D MJF31C MJF32C

    TRANSISTOR tip41c pin out

    Abstract: TRANSISTOR tip42c pin out tip41c tip42c TIP41C TIP42A TIP42C TIP41C collector characteristic curve 1N5825 MSD6100 TIP41A
    Text: ON Semiconductor NPN TIP41A Complementary Silicon Plastic Power Transistors TIP41B * TIP41C * . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — • • • TIP42A VCE sat) = 1.5 Vdc (Max) @ IC


    Original     		PDF TIP41A TIP41B TIP41C TIP42A TIP41A, TIP41B, TIP42B TIP41C, TIP42C TRANSISTOR tip41c pin out TRANSISTOR tip42c pin out tip41c tip42c TIP41C TIP42A TIP42C TIP41C collector characteristic curve 1N5825 MSD6100 TIP41A

    TIP318

    Abstract: TIP31B marking CJD TIP31C TIP32A TIP32B TIP32C TIP31A
    Text: TIP31A, TIP31B, TIP31C, NPN , TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. http://onsemi.com • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC


    Original     		PDF TIP31A, TIP31B, TIP31C, TIP32A, TIP32B, TIP32C, TIP32A TIP32B TIP318 TIP31B marking CJD TIP31C TIP32A TIP32B TIP32C TIP31A

    tip318

    Abstract: tip318 transistor TIP31c PNP Transistor TIP31A On Semiconductor tip32a
    Text: TIP31A, TIP31B, TIP31C, NPN , TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. http://onsemi.com • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC


    Original     		PDF TIP31A, TIP31B, TIP31C, TIP32A, TIP32B, TIP32C, TIP32A TIP32B tip318 tip318 transistor TIP31c PNP Transistor TIP31A On Semiconductor tip32a

    tip318

    Abstract: tip318 transistor TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C tip31c application equivalent transistor tip31c
    Text: TIP31A, TIP31B*, TIP31C, NPN , TIP32A*, TIP32B*, TIP32C, (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – http://onsemi.com


    Original     		PDF TIP31A, TIP31B* TIP31C, TIP32A* TIP32B* TIP32C, TIP32A TIP31B, TIP32B tip318 tip318 transistor TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C tip31c application equivalent transistor tip31c

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    2N5194

    Abstract: 2N5195 2N5191 2N5192 2N5193
    Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


    Original     		PDF 2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5194 2N5195 2N5191 2N5192 2N5193

    MJE5190

    Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
    Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN


    Original     		PDF 2N5191 2N5192 2N5194, 2N5195. r14525 2N5191/D MJE5190 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195

    2N4918

    Abstract: 2N4919 2N4920 2N4921 2N4922 2N4923
    Text: ON Semiconductor 2N4918 thru 2N4920 * Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE


    Original     		PDF 2N4918 2N4920 2N4921, 2N4922, 2N4923 r14525 AN4918/D 2N4918 2N4919 2N4920 2N4921 2N4922 2N4923